Abstract: The method comprises the steps of 1) producing first and second blanks (EB1, EB2) by laminating insulating and conductive inner layers (PP, CP, E1) on copper plates forming a base (MB1, MB2), at least one electronic chip (MT, MD) being sandwiched between the blanks, said blanks being produced such that their upper lamination surfaces have matching profiles, 2) stacking and fitting the blanks via their matching profiles, and 3) press-fitting the blanks to form a laminated sub-assembly for an integrated power electronics device. The method uses IMS-type techniques.

Abstract: The circuit comprises at least one electronic chip (MT, MD), a laminated substrate and heat sink means, the chip being implanted in the substrate and the heat sink means being secured to opposing faces of the substrate. According to the invention, the heat sink means comprise heat-sink-forming bus-bars (BBH, BBL) mounted on the opposing faces of the substrate, each of said bus-bars being formed by a plurality of metal segments (BB1H, BB2H, BB3H, BB4H; BB1L, BB2L, BB3L) secured at spaced-apart positions and interconnected with one another and with a contact face of the electronic chip (MT, MD) by means of a metal layer (MEH, MEL).

Abstract: The power switching module includes first and second subassemblies that are superimposed on top of each other to form a stack and that comprise first and second electronic power switches forming a bridging arm, respectively. The module comprises a metal central sheet (LW7) and first and second metal end sheets (LW2, LW12) forming top and bottom ends of the stack. According to the invention, the module also comprises first, second and third metal terminal rods (1, 2, 3) that extend through the stack and open onto at least one of the top and bottom ends thereof, the first, second and third rods being in electrical continuity with the first and second metal end sheets and the metal central sheet, respectively.