Abstract: The present invention concerns the field of microstructures and in particular microstructures made via CMOS technology on semiconductor substrates intended to undergo micro-machining by wet chemical etching, in particular by a KOH etchant. According to the present invention, protection against the KOH reactive agent is provided to such a structure by the deposition of a metal film (40, 41, 43) including at least on external gold layer (43) on the surface of the structure. This metal film (40, 41, 43) advantageously allows the use of mechanical protective equipment to be omitted and thus allows the wafers to be processed in batches. The present invention also proves perfectly compatible with a standard gold bumping process.

Abstract: The present invention concerns the field of microstructures and in particular microstructures made via CMOS technology on semiconductor substrates intended to undergo micro-machining by wet chemical etching, in particular by a KOH etchant. According to the present invention, protection against the KOH reactive agent is provided to such a structure by the deposition of a metal film (40, 41, 43) including at least on external gold layer (43) on the surface of the structure. This metal film (40, 41, 43) advantageously allows the use of mechanical protective equipment to be omitted and thus allows the wafers to be processed in batches. The present invention also proves perfectly compatible with a standard gold bumping process.

Abstract: A control system for a bidirectional switch (20) is described, formed of a pair of MOFSET power transistors (210, 220) connected in anti-series, i.e. source to source or drain to drain. This control system includes means (50) allowing the state of conduction of the power transistors to be controlled, one or the other of these transistors being able to be set to the “OFF” state in order to assure the interruption of a current through the bidirectional switch (20). This control system includes coupling means (SWCPL, 510) enabling the gate of the power transistor at the “ON” state to be coupled at least temporarily with the gate of the power transistor at the “OFF” state when the bidirectional switch is switched on. This has the advantage of allowing, on the one hand, the use of high control voltages assuring a reduction in the series resistance of the power transistors, and, on the other hand, the bidirectional switch to be quickly switched on.