Abstract: In a photonic integrate circuit (PIC) architecture, non-guided stray light that is radiated from components, junctions, discontinuous and scattering points in an integrated optic device, may be received by an integrated waveguide structure in the path of the stray radiation. The integrated waveguide structure may comprise a plurality of collectors that are configured to collect the non-guided stray light from the radiating source. Each of the collectors may comprise an integrated waveguide with a front end that is tapered to increase the mode-field size and pointed toward the stray light source, and with a back end that is connected to a secondary waveguide. The collectors are placed in the path of the stray light and aligned in the propagation direction of the stray light. The collected stray light is guided to a light energy damper through the second waveguide for converting light energy into heat.

Abstract: A semiconductor device comprises a device substrate and a metal film, with first and second non-recessed areal regions separated by a recessed areal region. The metal film covers contiguously the recessed and non-recessed areal regions and transition surfaces joining them. A first transition surface includes metallized portions over which (i) the first transition surface is not parallel to the other transition surface, (ii) the first transition surface is inclined relative to the device substrate, and (iii) the metal film on the first transition surface is contiguous with adjacent metal film portions on the recessed and non-recessed areal regions. A portion of an optoelectronic device surface running parallel to an optical waveguide of the device can be left exposed by a metal film on the device. Light propagating transversely out of the waveguide through the exposed portion can be detected, measured, or imaged for non-destructive device characterization or testing.

Abstract: A semiconductor laser source includes a partial-grating DFB laser with two laser electrodes, one over the grating and the other between the grating and one end of the laser. Constant laser currents flow into the waveguide through the electrodes (typically different from each other) and produce laser output. A wavelength discriminator, an optical detector, and a wavelength-control circuit act as a wavelength-control feedback mechanism to generate a wavelength control current that flows through one laser electrode or the other, or through both electrodes with opposite polarities. Phase noise on the laser output can be reduced at modulation frequencies exceeding several hundred kHz up to one or several tens of MHz or more. The laser-wavelength can be swept while exhibiting reduced phase noise.

Abstract: A hybrid silicon/III-V compound semiconductor laser device comprising a silicon substrate including a channel configured for silicide line formation as a function of current through the channel; so that the temperature of the laser device is adjusted to a predetermined level.

Abstract: A semiconductor device or an integrated circuit formed on a substrate with shunt disposed on the substrate in parallel with the device or circuit and designed to form a closed circuit or discharge path when the device is subjected to an electrostatic discharge pulse.

Abstract: A method of fabricating waveguide on a semiconductor substrate including an optical input at a first end region for receiving a continuous wave coherent light beam having a predetermined first beam profile, and a second end region opposite the first end region active layer for transferring the light beam with a predetermined second beam profile, including forming a sequence of layers including a bottom cladding layer, an active layer, and a top cladding layer on a semiconductor substrate; providing an appropriately configured mask over the region where a waveguide is to be formed; etching the semiconductor substrate down to the active layer thereby forming a partial waveguide structure; and re-growing the top cladding layer and the contact layer to the uniformly planar level of the top surface of the partial waveguide structure.

Abstract: An optical fiber data communications network in which an electro-optical transceiver couples a plurality of serial electrical data buses over a single bidirectional optical fiber link, and includes a controller that functions by oversampling the digital electrical signal on each of such buses, multiplexes them, and converts the signal into a high speed optical signal for transmission over an optical fiber.

Abstract: An optical modulator including an information-containing radio frequency signal input; a semiconductor device having an optical input optically for receiving the coherent light beam, and a electrode connected to said radio frequency signal input and having a modulated bias potential so that current is generated in the second semiconductor device and extracted therefrom, while the coherent light beam is optically modulated by the signal changing the carrier density in the semiconductor device.

Abstract: A tunable laser configured in a small package subassembly including a gain chip positioned in the interior space between first and second tunable filter subassemblies. The tunable laser is packaged in either a rectangular or cylindrical housing, with an electrical input interface positioned at one end of the housing.

Abstract: A tunable laser transmitter configured in a small package subassembly coupled to a printed circuit board. The tunable laser transmitter includes a housing with a volume formed by exterior walls. An electrical input interface is positioned at the first end of the housing. A first and a second optical output interface is positioned at the second end of the housing, the first output being configured to transmit a modulated optical beam, and the second output configured to transmit a cw beam to the local oscillator of an external receiver.

Abstract: An apparatus for analyzing, identifying or imaging an target including first and second laser beams coupled to a pair of photoconductive switches to produce CW signals in one or more bands in a range of frequencies greater than 100 GHz focused on and transmitted through or reflected from the target; and a detector for acquiring spectral information from signals received from the target and using a multi-spectral heterodyne process to generate an electrical signal representative of some characteristics of the target. The lasers are tuned to different frequencies and a frequency shifter in the path of one laser beam allows the terahertz beam to be finely adjusted in one or more selected frequency bands.

Abstract: A method of fabricating a semiconductor laser device by forming a semiconductor structure at least part of which is in the form of a mesa structure having a flat top. The steps include depositing a passivation layer over the mesa structure, forming a contact opening in the passivation layer on the flat top of the mesa structure; and depositing a metal contact portion, with the deposited metal contact portion contacting the semiconductor structure via the contact opening. The contact opening formed through the passivation layer has a smaller area than the flat top of the mesa structure to allow for wider tolerances in alignment accuracy. The metal contact portion comprises a platinum layer between one or more gold layers to provide an effective barrier against Au diffusion into the semiconductor material.

Abstract: A semiconductor device including a semiconductor substrate having a surface including an active semiconductor device including one of a laser and a photodiode; and a visual indicator disposed on the semiconductor body and at least adjacent to a portion of said active semiconductor device, the indicator having a state that shows if damage to the active semiconductor device may have occurred.

Abstract: According to an embodiment of the invention, there is provided a micro integratable tunable laser assembly (m-ITLA) which includes an electrical interface for interfacing with a host, a tunable laser module for conducting optical communication, and a control unit, for at least controlling operation of the tunable laser module according to information received from the host via the electrical interface. The m-ITLA can have a length of about 37 mm or less and a width of about 20 mm or less.

Abstract: An apparatus for analyzing, identifying or imaging an target including first and second laser beams coupled to a pair of photoconductive switches to produce CW signals in one or more bands in a range of frequencies greater than 100 GHz focused on and transmitted through or reflected from the target; and a detector for acquiring spectral information from signals received from the target and using a multi-spectral heterodyne process to generate an electrical signal representative of some characteristics of the target. The lasers are tuned to different frequencies and a frequency shifter in the path of one laser beam allows the terahertz beam to be finely adjusted in one or more selected frequency bands.

Abstract: A tunable laser configured in a small package coupled to a printed circuit board. The tunable laser includes a housing with a volume formed by exterior walls. An electrical input interface is positioned at the first end of the housing. An optical output interface is positioned at the second end of the housing and configured to transmit a continuous wave optical beam. A beam splitter and photodiode is disposed in the path of the laser beam for determining the emitted intensity of the laser beam, and an optical isolator is positioned downstream of the beam splitter to prevent the incoming light from the beam splitter from reflecting back though the beam splitter and into the cavity of the laser.

Abstract: A laser assembly and a method for manufacturing the same are provided according to embodiments of the present disclosure. The laser assembly (900) may comprise a first plate (903) having first projections (918, 928); a printed circuit board assembly (902) including a printed circuit board (912) having first openings (913, 915) and a laser module (100) thereon, and a second plate (901) having second projections (917, 927). The printed circuit board assembly (902) can be retained between the first plate (903) and the second plate (901) by the first projections (918, 928) and the second projections (917, 927). The laser assembly may further comprises a first pad (930) provided between the laser module (100) and the first plate (903) and/or a second pad (920) provided between the laser module (100) and the second plate (901).

Abstract: A semiconductor gain device comprising a substrate; an optical waveguide layer extending from a first end of the substrate to a second end of the substrate opposite to the first end, the optical waveguide layer including an active layer formed on the upper surface; a reflective mirror provided at one end of the optical waveguide layer, and an exit aperture on the other end of the optical waveguide layer for emitting optical energy; wherein at least a portion of the optical waveguide layer is curved on the surface of the substrate from the first end to the second end with a radius of curvature of less than 4 mm.

Abstract: A method of making an optical modulator by determining the material composition of the quantum well region in the waveguide portion of the modulator so that the modulator is transparent at a gain peak wavelength that is greater than the predetermined wavelength by a predetermined amount, and fabricating the modulator with the determined material composition.

Abstract: A laser assembly and a method for manufacturing the same are provided according to embodiments of the present disclosure. The laser assembly (900) may comprise a first plate (903) having first projections (918, 928); a printed circuit board assembly (902) including a printed circuit board (912) having first openings (913, 915) and a laser module (100) thereon, and a second plate (901) having second projections (917, 927). The printed circuit board assembly (902) can be retained between the first plate (903) and the second plate (901) by the first projections (918, 928) and the second projections (917, 927). The laser assembly may further comprises a first pad (930) provided between the laser module (100) and the first plate (903) and/or a second pad (920) provided between the laser module (100) and the second plate (901).