Abstract: A method is provided for removing photoresist from a substrate, wherein the method comprises producing a gas plasma from a gas mixture comprising oxygen, CF.sub.4, nitrogen, and hydrogen; substantially eliminating any electrically charged particles from the plasma to produce a plasma effluent; heating the substrate to a temperature in the range of from about 250 to 300 degrees Centigrade; exposing the substrate and photoresist thereon to the effluent while said temperature is maintained; and simultaneously with the exposure step, irradiating the substrate with collimated ultraviolet radiation.

Abstract: This invention relates to an apparatus and process for the uniform dry process treatment of the surface of a substrate. More particularly, the invention relates to an apparatus and process wherein a gas plasma composition having at least one reactive specie is supplied through a first inlet port into a chamber means containing the substrate to be treated. A second gas is also supplied into the chamber through a second inlet port thereby redirecting the gas plasma composition into contact with the substrate in a substantially uniform manner.

Abstract: A method and apparatus for dry processing of a substrate is provided. More particularly, a substrate is exposed to a gas, such as an effluent from a gas plasma, having at least one reactive specie, such as a free radical, the gas having substantially no electrically charged particles present. Simultaneously, the substrate is irradiated with ultraviolet radiation to enhance the reaction rate in a controlled manner. Also provided is a means for irradiating the wafer with infrared radiation to heat the wafer independently of the irradiation with ultraviolet radiation.