Abstract: This invention provides the structure for a two-phase charge coupled storage device. Alternate regions of thicker and thinner silicon dioxide are grown upon a silicon substrate. These silicon dioxide regions are covered with a layer of deposited, undoped polysilicon. A layer of silicon dioxide is grown over the polysilicon. Ion implantation is applied to cause isolated regions of conductivity in the polysilicon. Then contact windows are cut in the upper most layer of silicon dioxide exposing the polysilicon therethrough and a metal coating is deposited in the contact windows. Two-phase signals are applied to the resulting electrodes to advance charges at the surface of the silicon substrate.

Abstract: A process is described for forming a plurality of polysilicon runs on the surface of a semiconductor substrate, such as a silicon substrate, at least one of the polysilicon runs having a resistor portion formed therein, and at least one of the polysilicon runs forming the conductive gate electrode of a self-aligned insulated silicon gate field effect device.