Patents Assigned to EMM Semi
  • Process of forming a semiconductor memory cell with continuous polysilicon run circuit elements
    Patent number: 4214917
    Abstract: A process is described for forming a plurality of polysilicon runs on the surface of a semiconductor substrate, such as a silicon substrate, at least one of the polysilicon runs having a resistor portion formed therein, and at least one of the polysilicon runs forming the conductive gate electrode of a self-aligned insulated silicon gate field effect device.
    Type: Grant
    Filed: February 10, 1978
    Date of Patent: July 29, 1980
    Assignee: EMM Semi
    Inventors: Kenneth L. Clark, George S. Leach, Robert W. Howard