Abstract: A Dual-Sided Push-Pull Amplifier for providing a high-gain yet low-cost amplifier capable of operating at frequencies extending above 1 GHz is disclosed. The present invention may be used in any application in which low cost amplification may be desired, including transmitters, antenna arrays, radars, light wave modulators, mixers, local oscillators, driver amplifiers and microwave ovens. One of the preferred embodiments of the invention (10d/10e) utilizes two pairs of field effect transistors (FETs) (22U and 22L & 24U and 24L) mounted in registration on both faces (12a & 12b) of a dual-sided dielectric substrate (12). The sources (22US and 22LS & 24US and 24US) on both faces of the FETs (22 & 24) are electrically coupled and are located at a minimum distance from their mates on the opposite faces of the substrate (12) to reduce inter-FET source lead inductance. The FETs (22 & 24) are coupled to a set of conductors (16a, 16b, 16c & 16d) which are formed on the substrate (12).