Abstract: Thin-film ferroelectric microwave components having a flexible and lightweight flexible metallic foil substrates and device structures offers a capability shaping the device to desired geometrical constructions and facilitating improvements in designs, sizes and costs.

Abstract: The invention relates to a process of preparing a copper/nickel substrate by annealing nickel-coated copper. After the nickel deposition step, a dielectric, such as lead zirconate titanate (PZT), may be deposited onto the substrate by methods known in the art such as sol-gel or vacuum deposition. This invention further relates to thin film composites. These composites include a pre-annealed nickel-coated copper substrate and a dielectric such as PZT.

Abstract: Crystalline dielectric lead zirconate titanate thin film composites on metallic foils exhibit high dielectric constants, low dielectric loss (loss tangent of less than 5%) and low leakage current. The lead zirconate titanates may be of the formula PbZrxTiyOz (PZT) wherein x and y are independently from about 0.35 to about 0.65 and z is from about 2.5 to about 5.0. The thin foil dielectric composites can be prepared by a variety of methods including deposition of PZT thin films on brass, platinum, titanium, and stainless steel foils using sol-gel processing, sputtering deposition and chemical vapor deposition.

Abstract: The invention relates to a nanostructured BaTiO3 film, plate or array that has from 1,000 to 10,000 times the storage capacity of conventional capacitors. The barium titanates are of the formula BaaTibOc wherein a and b are independently between 0.75 and 1.25 and c is 2.5 to about 5.0. The barium titanates may further be doped with a material, “M”, selected from Au, is Au, Cu, Ni3Al, Ru or InSn. The resulting titanate may be represented by the formula MdBaaTibOc wherein d is about 0.01 to 0.25, a is about 0.75 to about 1.25, b is about 0.75 to about 1.25 and c is about 2.5 to about 5.0. X-ray diffraction results illustrate that the crystal structure of the thin films changed from predominantly cubic to tetragonal phase and crystallite size increased with increasing concentration of “M”.

Abstract: A backup energy unit for an electrical device having a power source, an operational load, and containing a layered electrical device having a top exterior surface and a bottom exterior surface, such as an integrated chip or layered circuit board. The energy unit is made up of at least one energy storage device. This energy storage device is made up of a dielectric material and a first and a second electrical storage conducting layer. The dielectric material lies between the first and second electrical storage conducting layers. Further, the dielectric material exists between the top exterior surface and bottom exterior surface of the layered electrical device. The energy unit is further made up of a voltage detector to detect a potential level of the power source. When the voltage detector detects a power source disruption, that is when the potential level of the power source is below a first voltage state, it controls a switcher.

Abstract: The invention relates to a nanostructured BaTiO3 film, plate or array that has from 1,000 to 10,000 times the storage capacity of conventional capacitors. The barium titanates are of the formula BaaTibOc wherein a and b are independently between 0.75 and 1.25 and c is 2.5 to about 5.0. The barium titanates may further be doped with a material, “M”, selected from Au, is Au, Cu, Ni3Al, Ru or InSn. The resulting titanate may be represented by the formula MdBaaTibOc wherein d is about 0.01 to 0.25, a is about 0.75 to about 1.25, b is about 0.75 to about 1.25 and c is about 2.5 to about 5.0. X-ray diffraction results illustrate that the crystal structure of the thin films changed from predominantly cubic to tetragonal phase and crystallite size increased with increasing concentration of “M”.

Abstract: A backup energy unit for an electrical device having a power source, an operational load, and containing a layered electrical device having a top exterior surface and a bottom exterior surface, such as an integrated chip or layered circuit board. The energy unit is made up of at least one energy storage device. This energy storage device is made up of a dielectric material and a first and a second electrical storage conducting layer. The dielectric material lies between the first and second electrical storage conducting layers. Further, the dielectric material exists between the top exterior surface and bottom exterior surface of the layered electrical device. The energy unit is further made up of a voltage detector to detect a potential level of the power source. When the voltage detector detects a power source disruption, that is when the potential level of the power source is below a first voltage state, it controls a switcher.

Abstract: The present invention is directed towards an embedded electrical storage device in a layered electrical device, such as a printed circuit board or integrated circuit chip. An electrical energy storage device, having an outer surface, is embedded in the layered electrical device, either partially or fully is formed of at least two electrical conducting layers sandwiching a high capacity dielectric, and is connected to other circuitry on the layered electrical device. This arrangement may be used in numerous applications including use as storage and filter capacitors for power conditioning.