Abstract: A photovoltaic device, having an improved passivation of surfaces, such as a circumferential outer wall and/or an aperture wall of a back contact metal wrap-through photovoltaic device, for example, into which the pn-junction of first and second semiconductor layers extends. The passivation comprises a passivating layer of a first type, covering at least part of such wall substantially comprised by the depletion region across the pn-junction; a passivating layer of a second type, covering at least part of such wall comprised by the first semiconductor layer, and a passivating layer of a third type covering at least part of the outer wall comprised by the second semiconductor layer.