Abstract: A portable illuminating system is provided. The portable illuminating system includes an illuminating card providing a light; a cartridge socket retaining the illuminating card; and a battery base electrically connected with the cartridge socket and retaining a battery providing an electric power to the illuminating card.

Abstract: A flip-chip LED fabrication method includes the steps of (a) providing a GaN epitaxial wafer, (b) forming a first groove in the GaN epitaxial layer, (c) forming a second groove in the GaN epitaxial layer to expose a part of the N-type GaN ohmic contact layer of the GaN epitaxial layer, (d) forming a translucent conducting layer on the epitaxial layer, (e) forming a P-type electrode pad and an N-type electrode pad on the translucent conducting layer, (f) forming a first isolation protection layer on the P-type electrode pad, the N-type electrode pad, the first groove and the second groove, (g) forming a metallic reflection layer on the first isolation protection layer, (h) forming a second isolation protection layer on the first isolation protection layer and the metallic reflection layer, (i) forming a third groove to expose one lateral side of the N-type electrode pad, (j) separating the processed GaN epitaxial wafer into individual GaN LED chips, and (k) bonding at least one individual GaN LED chip thus obt