Abstract: A reaction tank (5) holds crushed cells comprising a pellicle of Bacillus midousuji cultured in the presence of a chlorinated aromatic compound such as dioxins and holds wastewater comprising a contaminated matter such as fly ash which comprises dioxins and which is produced by washing of a facility such as an incinerator. Air is supplied by a blower (6) to a matter held in the reaction tank (5). Accordingly, dioxins having three or more chlorine atoms in the contaminated matter can be decomposed, and the contaminated matter can be easily cleaned at a site where dioxins generate such as a washing or dismantling site of an incineration facility.

Abstract: A thermoelectric semiconductor is formed of a sintered semiconductor layer and metal layers arranged on sides of opposite end faces of the sintered semiconductor layer. These metal layers are to inhibit a reaction between the sintered semiconductor layer and solder layers through which electrodes are joined to the sintered semiconductor layer. The sintered semiconductor layer and the metal layers have been obtained beforehand by integrally sintering a semiconductor powder layer and metal sheets arranged on sides of opposite end faces of the semiconductor powder layer.

Abstract: A fuel reforming apparatus comprising a liquid feed heating portion, an evaporation portion, a steam superheating portion, a reforming portion, a shift reaction portion, a CO oxidization portion, a catalytic combustion portion, and a heat recovery portion. These portions are constituted by flat plates provided with heat-transfer fins in the interior and are stacked into an integral structure, thereby obtaining a temperature distribution along a stacked direction so that the flat plate elements reach a temperature suitable for reforming, combustion, evaporation, shift, and CO oxidization.

Abstract: A thermoelectric semiconductor is formed of a sintered semiconductor layer nd metal layers arranged on sides of opposite end faces of the sintered semiconductor layer. These metal layers are to inhibit a reaction between the sintered semiconductor layer and older layers through which electrodes are joined to the sintered semiconductor layer. The sintered semiconductor layer and the metal layers have been obtained beforehand by integrally sintering a semiconductor powder layer and metal sheets arranged on sides of opposite end faces of the semiconductor powder layer.