Abstract: An asymmetric bipolar plasma etching process is employed for etching a workpiece positioned within a plasma chamber, to prepare the workpiece for a subsequent coating process. The etching process involves applying a negative high voltage to the workpiece, relative to an anode portion of the chamber. Pulses of a positive voltage are applied to the workpiece at a predetermined pulse width and a predetermined level relative to the anode, so that the applied voltage appears as a train of asymmetric bipolar pulses. The waveform has a major negative-going portion and a minor positive-going portion. The negative-going portion can have a voltage of minus 300 to minus 4,000 volts, and the positive-going pulses can have a voltage of plus 50 to plus 300 volts, and a typical pulse width between about 0.25 and 3 microseconds. The etching process can be followed by a sputter coating process in the same chamber. Another coating technique could also be used.

Abstract: A protective circuit for a power field effect transistor, e.g., a power MOSFET, employs a diode-switched pickup circuit, a threshold detector, and a timer. The pickup circuit includes a resistor and diode in series, with the diode connected with the MOSFET drain electrode and the resistor connected with the gate driver for the MOSFET gate electrode. A pickup voltage V.sub.1 appears at the junction of the diode and resistor. When the MOSFET is conducting the pickup voltage is the sum of the channel voltage V.sub.ds-on and the diode forward voltage V.sub.f. When the MOSFET is biased OFF, the pickup voltage is zero. The threshold detector compares the pickup voltage with a reference voltage that is offset some predetermined amount from the source electrode voltage. When threshold circuit goes high, the timer circuit provides a time-out or inhibit signal to an inhibit input of the gate driver circuit. Under high load current or high temperature conditions, the drain-source voltage V.sub.

Abstract: A soft start circuit for a high-power module permits trickle-charging of the capacitor bank prior to power switch actuation, and avoids large current surges or inrush at power up. Positive temperature coefficient thermistor devices, or PTCs are place in shunt across the switch elements or poles of the actuator or other power switch. In a power module that is powered by three-phase AC, the three power conductors are coupled through a three-pole contactor to AC inputs of a polyphase rectifier bridge, which has DC outputs coupled to the capacitor bank and to a load device, such as a high-power RF amplifier. The PTCs are connected, one per pole, in shunt across each pole of the contactor. Alternatively, metallized film capacitors can be employed in lieu of the PTCs.

Abstract: An aliasing sampler probe for detecting plasma RF voltage and current employs a sampling signal with a sampling rate slower that the RF fundamental frequency selected to produce an aliasing waveform at an aliasing frequency that is several orders of magnitude below the RF fundamental frequency. In one embodiment, the RF power is applied at 13.56 MHz. and sampling pulses have a sampling rate of 2.732 MHz to produce replicas of the RF voltage and current waveforms at an aliasing frequency of about 100 KHz. The aliasing replicas preserve phase and harmonic information with an accuracy that is not available from other sampling techniques.