Abstract: An integrated circuit formed on a semiconductor substrate and configured to accommodate higher voltage devices and low voltage devices therein. In one embodiment, the integrated circuit includes a transistor having a gate located over a channel region recessed into a semiconductor substrate, and a source/drain including a lightly doped region located adjacent the channel region and a heavily doped region located adjacent the lightly doped region. The transistor also includes an oppositely doped well located under and within the channel region. The transistor still further includes a doped region, located between the heavily doped region and the oppositely doped well, having a doping concentration profile less than a doping concentration profile of the heavily doped region. The integrated circuit also includes a driver switch of a driver formed on the semiconductor substrate.

Abstract: A method of forming an integrated circuit employable with a power converter. In one embodiment, the method of forming the integrated circuit includes forming a power switch of a power train of the power converter on a semiconductor substrate, and forming a driver switch of a driver configured to provide a drive signal to the power switch and embodied in a transistor. The method of forming the transistor includes forming a gate over the semiconductor substrate, and forming a source/drain by forming a lightly doped region adjacent a channel region recessed into the semiconductor substrate and forming a heavily doped region adjacent the lightly doped region. The method of forming the transistor further includes forming an oppositely doped well within the channel region, and forming a doped region with a doping concentration profile less than the heavily doped region between the heavily doped region and the oppositely doped well.

Abstract: An integrated circuit employable with a power converter. In one embodiment, the integrated circuit includes a power switch of a power train of the power converter formed on a semiconductor substrate. The integrated circuit also includes a driver switch of a driver configured to provide a drive signal to the power switch and embodied in a transistor including a gate located over a channel region recessed into the semiconductor substrate. The transistor also includes a source/drain including a lightly doped region located adjacent the channel region and a heavily doped region located adjacent the lightly doped region. The transistor further includes an oppositely doped well located under and within the channel region. The transistor still further includes a doped region, located between the heavily doped region and the oppositely doped well, having a doping concentration profile less than a doping concentration profile of the heavily doped region.

Abstract: A method of forming an integrated circuit employable with a power converter. In one embodiment, the method of forming the integrated circuit includes forming a transistor employable as a switch of a power train of the power converter by forming a gate over a semiconductor substrate. The method of forming the transistor also includes forming a source/drain by forming a lightly doped region adjacent a channel region recessed into the semiconductor substrate, forming a heavily doped region adjacent the lightly doped region, and forming an oppositely doped well within the channel region. The method of forming the transistor further includes forming a doped region with a doping concentration profile less than the heavily doped region between the heavily doped region and the oppositely doped well. The method of forming the integrated circuit also includes forming a driver switch of a driver to provide a drive signal to the transistor.

Abstract: An encapsulatable package for a magnetic device that includes a magnetic core. In one embodiment, the encapsulatable package for the magnetic device includes a shielding structure located about the magnetic core configured to create a chamber thereabout and configured to limit an encapsulant entering the chamber. The encapsulatable package for the magnetic device also includes a baffle within the chamber configured to direct the encapsulant away from the magnetic core.

Abstract: A method of photochemically reducing iron(III) species in an iron or iron alloy plating solution by adding an additive to the electroplating solution; contacting the additive with iron(III) species to form an iron(III)-additive species; and irradiating the electroplating solution, wherein the radiation is of sufficient energy to reduce the iron(III) in the iron(III)-additive species to iron(II). The additive comprises hydroxycarboxylic acids and their lactones.

Abstract: A method of electroplating iron or an iron alloy with a solution containing an iron-chelating agent to catalytically cycle the undesirable Fe(III) species back to Fe(II) for electroplating. The iron-chelating agents may be siderophores, specifically, for example, desferrioxamine E, desferrioxamine B, alcaligin, bisucaberin, putrebactin, rhodotorulic acid, enterobactin, vibriobactin, azotochelin, myxochelin, fluvibactin, and serratiochelin.

Abstract: A controller for, related method of controlling a switch of, a power converter and a power converter employing the same. The controller is employable with a power converter including a switch of a power train configured to conduct for a duty cycle and provide a regulated output characteristic at an output thereof. In one embodiment, the controller includes a sparse analog-to-digital converter configured to determine a difference between the output characteristic and a desired characteristic and provide an error signal representing the difference in discrete steps. A magnitude of the discrete steps is small when the difference is small and the magnitude of the discrete steps is larger when the difference is larger. The controller also includes a duty cycle processor configured to provide a digital duty cycle signal to control the duty cycle of the switch as a function of the error signal.

Abstract: A controller for, related method of controlling a switch of, a power converter, and a power converter employing same. The controller is employable with a power train of a power converter including a switch configured to conduct for a duty cycle and provide a regulated output characteristic at an output thereof. In one embodiment, the controller includes an oscillator configured to provide a clock signal having multiple phases. The controller also includes a modulator configured to select a phase of the clock signal as a function of a portion of a digital duty cycle signal to refine a resolution of the duty cycle and provide a signal to control the duty cycle of the switch as a function of the digital duty cycle signal.

Abstract: An integrated circuit employable with a power converter. In one embodiment, the integrated circuit includes a transistor employable as a switch of a power train of the power converter including a gate located over a channel region recessed into a semiconductor substrate. The transistor also includes a source/drain including a lightly doped region located adjacent the channel region and a heavily doped region located adjacent the lightly doped region. The transistor further includes an oppositely doped well located under and within the channel region. The transistor still further includes a doped region, located between the heavily doped region and the oppositely doped well, having a doping concentration profile less than a doping concentration profile of the heavily doped region. The integrated circuit also includes a driver switch of a driver configured to provide a drive signal to the transistor and formed on the semiconductor substrate.