Abstract: A polishing pad includes a polishing layer, wherein the polishing layer includes zinc (Zn), and a concentration of the zinc (Zn) is 0.5 ppm to 40 ppm parts by weight based on the total weight of the polishing layer. In an exemplary embodiment, a polishing pad is provided wherein a concentration of the zinc (Zn) is 0.5 ppm to 40 ppm parts by weight based on the total weight of the polishing layer, a concentration of the iron (Fe) is 1 ppm to 50 ppm parts by weight based on the total weight of the polishing layer, and a concentration of the aluminum (Al) is 2 ppm to 50 ppm parts by weight based on the total weight of the polishing layer.

Abstract: This invention relates to a polishing pad and a method for manufacturing the same. The polishing pad may include a top pad layer and a window block. The top pad layer may include a groove pattern formed on an upper surface of the top pad layer. A first hole may be formed through the top pad layer. The window block may be inserted into the first hole. The top pad layer and the window block may have a structure coincided with following Formula 1. 1.1 ? Gap + Thk RTPC Thk grv ? 3. Formula ? 1 In Formula 1, the gap may indicate a height difference between an upper surface of the top pad layer and an upper surface of the window block, the ThkRTPC may indicate a thickness of the window block, and the Thkgrv may indicate a depth of the groove pattern.

Abstract: The present disclosure is to provide a polishing pad which is capable of providing physical properties corresponding to various polishing purposes for various polishing objects through the subdivided structural design in a thickness direction, and of securing environmental friendliness by applying a recycled or recyclable material to at least some components, in relation to disposal after use, unlike the conventional polishing pad. Specifically, the polishing pad includes a polishing layer, wherein the polishing layer includes a polishing variable layer having a polishing surface; and a polishing constant layer disposed on a rear surface side of the polishing variable layer opposite to the polishing surface, and wherein the polishing constant layer includes a cured product of a composition having thermosetting polyurethane particles and a binder.

Abstract: The present disclosure is to provide a polishing pad which is capable of providing physical properties corresponding to various polishing purposes for various polishing objects through the subdivided structural design in a thickness direction, and of securing environmental friendliness by applying a recycled or recyclable material to at least some components, in relation to disposal after use, unlike the conventional polishing pad. Specifically, it includes a polishing layer, wherein the polishing layer includes a polishing variable layer having a polishing surface; and a polishing constant layer disposed on a rear surface side of the polishing variable layer opposite to the polishing surface.

Abstract: The polishing pad according to an embodiment comprises a multifunctional low-molecular-weight compound as one of the polymerization units of the polyurethane-based resin that constitutes the polishing layer, thereby reducing the unreacted diisocyanate monomer in the production process to enhance the processability and quality and to increase the crosslinking density. Thus, the polishing pad may be applied to a process of preparing a semiconductor device, which comprises a CMP process, to provide a semiconductor device such as a wafer of excellent quality.

Abstract: The present invention relates to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, to a process for preparing the same, and to a process for preparing a semiconductor device using the same. The polishing pad according to an embodiment can achieve low hardness by comprising a polishing layer formed using a curing agent of specific components. It is possible to enhance the mechanical properties of the polishing pad, as well as to improve the surface defects appearing on the surface of a semiconductor substrate, by controlling the surface roughness reduction rate and the recovery elasticity index of the polishing pad to specific ranges. It is also possible to further enhance the polishing rate.

Abstract: A polishing pad includes a polyurethane, wherein the polyurethane includes in its main chain a silane repeating unit represented by Formula 1, wherein the number of defects on a substrate after polishing with the polishing pad and a fumed silica slurry is about 40 or less wherein R11 and R12 are each independently hydrogen or C1-C10 alkyl groups, and n is an integer from 1 to 30.

Abstract: An adhesive film for a polishing pad including a plurality of through holes extended from a top surface to a bottom surface of the adhesive film, wherein a volume fraction of the plurality of through holes is 3% to 20% based on a total volume of the adhesive film, is disclosed.