Abstract: A method for manufacturing a high voltage LED flip chip is provided, including: providing a substrate; forming an epitaxy stacking layer on the substrate; etching the epitaxy stacking layer to form a first groove and a Mesa-platform on each chip-unit region; forming a first electrode on each of the Mesa-platforms, wherein the first electrodes on two neighboring chip-unit regions form a second groove; forming a first insulation layer covering the Mesa-platforms and the first electrodes, filling the second groove and partially filling the first grooves to form a third groove; etching the first insulation layer to form fourth groove; and forming an interconnection electrode, wherein the interconnection electrode fills the third groove and the fourth groove, two neighboring interconnection electrodes form a fifth groove, the interconnection electrode connects the first electrode on one chip-unit region and the first semiconductor layer on the other chip-unit region. LED formed has improved performance.

Abstract: A high voltage LED flip chip includes two or more regions; a Mesa-platform, the Mesa-platform in each region has a first groove; a first electrode located on the Mesa-platform, an area between the first electrodes in two adjacent regions forms a second groove; a first insulation layer covering the Mesa-platforms and the first electrodes, the first insulation layer fills the second groove and partially fills the first groove, and a part of the first groove which is not filled forms a third groove; a fourth groove formed in the first insulation layer, the fourth groove exposes a surface of the first electrode; and an interconnection electrode, the interconnection electrode comprises a first portion connecting the first semiconductor layer through the third groove in a particular region with the first electrode through the fourth groove in another region adjacent to the particular region. The LED formed has improved performance.

Abstract: A lighting circuit comprises a first rectifying diode (D1), a second rectifying diode (D2), a third rectifying diode (D3), a fourth rectifying diode (D4), a first group of LEDs (LED11, . . . , LED1n), a second group of LEDs (LED21, . . . , LED2n), a third group of LEDs (LED31, . . . , LED3n), and a fourth group of LEDs (LED41, . . . , LED4n). The first group of LEDs (LED11, . . . , LED1n) is connected between the anode and the cathode of the first rectifying diode (D1); the second group of LEDs (LED21, . . . , LED2n) is connected between the anode and the cathode of the second rectifying diode (D2); the third group of LEDs (LED31, . . . , LED3n) is connected between the anode and the cathode of the third rectifying diode (D3); the fourth group of LEDs (LED41, . . . , LED4n) is connected between the anode and the cathode of the fourth rectifying diode (D4).

Abstract: An LED includes a first electrode, for connecting the LED to a negative electrode of a power supply and a substrate located on the first electrode in which a plurality of contact holes are formed extending through the substrate. The diameter of upper parts of the contact holes is less than the diameter of lower parts of the contact holes, and the contact holes are filled with electrode plugs connecting the first electrode to the LED die. The light emitting device includes the LED, and further includes a susceptor and an LED mounted on the susceptor. The manufacturing method includes forming successively an LED die and a second electrode on a substrate, patterning a back surface of the substrate to form inverted trapezoidal contact holes which expose the LED die, and filling the contact holes with conductive material until the back face of the substrate is covered by the conductive material.

Abstract: A light emitting diode (LED) and a forming method thereof are provided. The LED includes a semiconductor substrate, a bonding layer formed on a surface of the semiconductor substrate, and a LED die formed on a surface of the bonding layer. The effective lighting area of the LED may be increased, heat radiation may be improved, and lighting efficiency may be enhanced.

Abstract: A light emitting diode (LED) and a forming method thereof are provided. The method for forming the LED includes: providing a semiconductor substrate (20) and a sapphire substrate (30) respectively, wherein a first bonding layer (21) is formed on the silicon substrate (20), and a sacrificial layer (32), an LED die (33) and a second bonding layer (35) are formed in turn on the sapphire substrate (30); bonding the first bonding layer (21) and the second bonding layer (35); removing the sacrificial layer (32) and lifting off the sapphire substrate (30). The method increases the effective lighting area of the LED, improves heat radiation, and enhances lighting efficiency.

Abstract: The present invention provides manufacturing methods of an LED and a light emitting device. The manufacturing method of the LED includes: providing a substrate; forming on the substrate an LED chip and a second electrode successively; forming a lens structure covering the second electrode; coating the lens structure with fluorescent powder; forming a plurality of evenly distributed contact holes on a backface of the substrate, the contact holes extending through the substrate and to the LED chip; and filling the contact holes with conducting material till the backface of the substrate is covered by the conducting material. The LED has a high luminous efficiency and the manufacturing method is easy to implement.

Abstract: A method for manufacturing a deep isolation trench (221) and a method for manufacturing a high-voltage LED chip. Steps of the method for manufacturing a deep isolation trench (221) are as follows: forming a mask layer (202) on a substrate (200), and forming, in the mask layer, through etching, multiple windows (204) isolated from each other, the bottom of each window exposing the substrate; with epitaxial lateral overgrowth, forming an epitaxial structure (212) inside each window and a part of the mask layer around the window, respectively, each epitaxial structure having a trapezoidal cross section with a long bottom and a short top, and a gap between adjacent epitaxial structures forming a first deep trench (214); etching each epitaxial structure, forming a first shoulder (218) and a second shoulder (221) at both sides of each epitaxial structure, respectively, and forming a deep isolation trench above the mask layer between the adjacent epitaxial structures.

Abstract: The present invention provides an LED and the manufacturing method thereof, and a light emitting device. The LED includes a first electrode, for connecting the LED to a negative electrode of a power supply; a substrate, located on the first electrode; and an LED die, located on the substrate; in which a plurality of contact holes are formed extending through the substrate, the diameter of upper parts of the contact holes is less than the diameter of lower parts of the contact holes, and the contact holes are filled with electrode plugs connecting the first electrode to the LED die. The light emitting device includes the LED, and further includes a susceptor and an LED mounted on the susceptor.

Abstract: The present invention discloses an aluminum alloy material, which is made of raw material of aluminum alloy. The raw material of aluminum alloy consists of the following constituents by percentage of weight: graphene: 0.1%˜1%, carbon nano tube: 1%˜5%, the rest being Al. The aluminum alloy material of the present invention has a good performance of heat dissipation, the thermal conductivity is higher than 200 W/m. Meanwhile, the present invention further provides a method of manufacturing aluminum alloy backboard, in which method, the raw material of aluminum alloy is heated and melted in a heating furnace, afterwards, the raw material of aluminum alloy after melting is formed into an aluminum alloy backboard by die-casting, in this way, the utilization rate of material is increased and the manufacturing cost of the backboard is reduced.

Abstract: The present invention provides an LED and the manufacturing method thereof, and a light emitting device. The LED includes a first electrode, for connecting the LED to a negative terminal of a power supply; a substrate, located on the first electrode; and an LED chip, located on the substrate; in which a plurality of contact holes are formed through the substrate, the contact holes are evenly distributed and filled with electrode plugs connecting the first electrode to the LED chip. The light emitting device includes the LED, and further includes a base and an LED mounted on the base. The manufacturing method includes: providing a substrate; forming on the substrate an LED chip and a second electrode successively; forming a plurality of evenly distributed contact holes on a backface of the substrate, the contact holes extending through the substrate and to the LED chip; and filling the contact holes with conducting material till the backface of the substrate is covered by the conducting material.

Abstract: The present invention discloses an LED and its fabrication method. The LED comprises: a sapphire substrate; an epitaxial layer, an active layer and a capping layer arranged on the sapphire substrate in sequence; wherein a plurality of cone-shaped structures are formed on the surface of the sapphire substrate close to the epitaxial layer. The cone-shaped structures can increase the light reflected by the sapphire substrate, raising the external quantum efficiency of the LED, thus increasing the light utilization rate of the LED. Furthermore, the formation of a plurality of cone-shaped structures can improve the lattice matching between the sapphire substrate and other films, reducing the crystal defects in the film formed on the sapphire substrate, increasing the internal quantum efficiency of the LED.

Abstract: The present invention provides a light emitting device and a method for manufacturing a light emitting device. The light emitting device includes a base, an LED inversely mounted on the base. The LED includes an LED chip connected to the base and a buffer layer located on the LED. The buffer layer includes a plurality of depressions with complementary pyramid structure on a surface of the buffer layer not face the LED, the surface being a light-exiting surface of the LED. The buffer layer is made from silicon carbide. The light emitting device has a large area of the light-exiting surface and provides a reflecting film on a base, thus improving the luminous efficiency of the light emitting device. Inversely mounting mode is adopt, which is easy to implement.

Abstract: A lighting circuit comprises a first rectifying diode (D1), a second rectifying diode (D2), a third rectifying diode (D3), a fourth rectifying diode (D4), a first group of LEDs (LED11, . . . , LED1n), a second group of LEDs (LED21, . . . , LED2n), a third group of LEDs (LED31, . . . , LED3n), and a fourth group of LEDs (LED41, . . . , LED4n). The first group of LEDs (LED11, . . . , LED1n) is connected between the anode and the cathode of the first rectifying diode (D1); the second group of LEDs (LED21, . . . , LED2n) is connected between the anode and the cathode of the second rectifying diode (D2); the third group of LEDs (LED31, . . . , LED3n) is connected between the anode and the cathode of the third rectifying diode (D3); the fourth group of LEDs (LED41, . . . , LED4n) is connected between the anode and the cathode of the fourth rectifying diode (D4).

Abstract: The present invention provides a light emitting device and a method for manufacturing the light emitting device. The light emitting device includes a susceptor and a light emitting diode set on the susceptor. The light emitting diode includes an electrode layer connected to the susceptor and an LED die set on the electrode layer. The electrode layer is provided with a pyramid array structure surface and the pyramid array surface works as a reflective surface of the light emitting diode. The LED die is provided with an alveolate surface which works as the light exiting surface of the LED. According to the light emitting device provided in the present invention, the emanative light generated by the LED is emitted or reflected to a desired emitting direction. Further, the light emitting device has an alveolate light exiting surface and an LED having a pyramid array reflective surface, which increases the light emitting and reflective area of the LED, thereby improving the luminous efficiency.

Abstract: The present invention provides a light emitting device, including a base, an LED inversely mounted on the base. The LED includes a buffer layer, an LED chip on the buffer layer. The buffer layer includes a plurality of protrusions with complementary pyramid structure on a light-exiting surface of the LED. The present invention also provides a method for manufacturing a light emitting device, including: providing a substrate and forming a plurality of pyramid structures on the substrate; forming successively a buffer layer, an n-type semiconductor layer, an active layer, a p-type semiconductor layer and a contact layer on the substrate with the pyramid structures; forming an opening with a depth at least from the contact layer to a top of the n-type semiconductor layer, and forming a first electrode on the contact layer and a second electrode on a bottom of the opening; and removing the substrate. The light emitting device has a high luminous efficiency and the manufacturing method is easy to implement.

Abstract: The present invention provides a light emitting device and a method for manufacturing a light emitting device. The light emitting device includes a base, an LED inversely mounted on the base. The LED includes an LED chip connected to the base and a buffer layer located on the LED. The buffer layer includes a plurality of depressions with complementary pyramid structure on a surface of the buffer layer not face the LED, the surface being a light-exiting surface of the LED. The buffer layer is made from silicon carbide. The light emitting device has a large area of the light-exiting surface and provides a reflecting film on a base, thus improving the luminous efficiency of the light emitting device. Inversely mounting mode is adopt, which is easy to implement.