Abstract: This disclosure provides electrostatic discharge (ESD) mitigation devices. In one or more embodiments, the electrostatic discharge (ESD) mitigation device is a tubing connector to connect two or more conductive tubing segments in a fluid circuit, the tubing connector including an electrically conductive connector body with two or more attachment portions, two or more attachment fittings, and a conductive bracket configured to attach and interface with the connector body to electrically connect the connector body to ground.

Abstract: Chemical vapor deposition (CVD) processes which use a ruthenium precursor of formula R1R2Ru(0), wherein R1 is an aryl group-containing ligand, and R2 is a diene group-containing ligand and a reducing gas a described. The CVD can include oxygen after an initial deposition period using the ruthenium precursor and reducing gas. The method can provide selective Ru deposition on conductive materials while minimizing deposition on non-conductive or less conductive materials. Further, the subsequent use of oxygen can significantly improve deposition rate while minimizing or eliminating oxidative damage of the substrate material. The method can be used to form Ru-containing layers on integrated circuits and other microelectronic devices.

Abstract: System and method for removing molecular contaminants from an air stream are disclosed. The system includes first, second and third filter. The first filter removes organic contaminants from an air stream passing through the first filter. The second filter is downstream of the first filter, is physically and chemically exchangeable with the first filter and removes organic contaminants from the air stream output of the first filter. The third filter, downstream of the second filter, is not exchangeable with the first filter or the second filter. The first position filter can be replaced by the second filter in the second position when the first filter in the first position becomes depleted as detected. A new filter in the second filter position is inserted. Replacing the depleted first filter with the second downstream filter reduces costs and waste while inserting the new filter in the second position ensures removing organic contaminants.

Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.

Abstract: Provided is improved methodology for the nucleation of certain metal nitride substrate surfaces utilizing certain silicon-containing halides, silicon-containing amides, and certain metal precursors, in conjunction with nitrogen-containing reducing gases. While utilizing a pretreatment step, the methodology shows greatly improved nucleation wherein a microelectronic device substrate having such a metal nitride film deposited thereon has a thickness of about 10 ? to about 15 ? and less than about 1% of void area. Once such nucleation has been achieved, traditional layer-upon-layer deposition can rapidly take place.

Abstract: Provided is a process for the rapid deposition of highly conformal molybdenum- or tungsten-containing films onto microelectronic device substrates under vapor deposition conditions. In the practice of the invention, a first nucleation step is conducted, while utilizing a generally lower concentration of metal precursor than would ordinarily be utilized in the reaction zone. This utilization of lower metal precursor concentrations can be achieved by way of regulating the temperature of the ampoule (housing the precursor), the concentration of the precursor, pressure in the reaction zone, and the duration of the pulse. In this fashion, a generally lower concentration is utilized to form a nucleation layer of greater than or equal to about 3 ?, or up to about 9, 15, or 25 ?, at which time, the conditions for introducing the precursor are advantageously changed and the concentration of the precursor in the reaction zone is increased for the purpose of bulk deposition.

Abstract: The disclosure provides a process for preparing solid tri(C1-C4 alkyl)ammonium dihydrogen phosphates such as triethylammonium dihydrogen phosphate, in high yield, and in a free-flowing particulate form. The solid product advantageously possesses less than about 1500 ppm of aprotic organic solvents, less than about 1500 ppm of C1-C5 alkanols, and less than about 500 ppm of water, as determined by Karl Fischer titration.

Abstract: Described are methods of membrane distillation for processing organic liquids, hydrophobic distillation membranes useful for membrane distillation methods, and methods of preparing the hydrophobic distillation membranes.

Abstract: Described are ion-exchange membranes that include a porous polymeric membrane and imidazole ion-exchange groups at surfaces of the membrane; ion-exchange membranes and filters that contain the ion-exchange membranes; and methods of using the ion-exchange membranes and filters for separating charged biological molecule from a liquid.

Abstract: The invention provides a process for preparing molybdenum and tungsten oxyhalide compounds which are useful in the deposition of molybdenum and tungsten containing films on various surfaces of microelectronic devices. In the process of the invention, a molybdenum or tungsten trioxide is heated in either a solid state medium or in a melt-phase reaction comprising a eutectic blend comprising alkaline and/or alkaline earth metal salts. The molybdenum or tungsten oxyhalides thus formed may be isolated as a vapor and crystallized to provide highly pure precursor compounds such as MoO2Cl2.

Abstract: Three-dimensional multi-layer composite structures prepared by additive manufacturing techniques, as well as methods of preparing the structures by additive manufacturing techniques, wherein a multi-layer structure has layers of at least two different thicknesses and a precision thickness are disclosed herein. In some embodiments, a method includes forming a coarse feedstock layer having a coarse feedstock layer thickness, solidifying a portion of the coarse feedstock layer to form a solidified coarse feedstock layer having a solidified coarse feedstock layer thickness, before or after forming the solidified coarse feedstock layer, forming at least one fine feedstock layer having a fine feedstock layer thickness that is less than the coarse feedstock layer thickness, and solidifying a portion of the at least one fine feedstock layer to form the at least one solidified fine feedstock layer having a solidified fine feedstock layer thickness that is less than the solidified coarse feedstock layer thickness.

Abstract: A pod for transporting reticles includes an inner cover and an inner base plate. The inner base plate cooperates with the cover to establish a space for mounting a reticle. The inner base plate includes a hole having a perimeter and first and second flanges extending inward from the perimeter. A window assembly is mounted in the hole. The window assembly includes a transparent plate, a seal and a retainer. The seal contacts the outer or side planar surface of the transparent plate and the perimeter of the hole to seal an interface between the window assembly and the hole. The retainer contacts the second flange to retain the seal and transparent plate within the hole.

Abstract: A connection assembly includes a manifold configured to attach a removable cartridge and a connector pipe with a flange. The flange is disposed between an upper plate and a lower plate of the manifold and has a width that prevents tilting of the connector pipe at greater than a maximum tilt angle. The connector pipe is configured to be inserted into a port of the removable cartridge in which an O-ring is compressed between the connector and the port. A filter assembly includes a manifold, a filter removably attached to the manifold, a connector pipe with a flange disposed between an upper plate and a lower plate of the manifold, and an O-ring. The O-ring is compressed between the connector pipe and the port.

Abstract: Provided is methodology for the preparation of highly-desired iodosilanes such as H2SiI2 and HSi3, via a reaction of alkylaminosilanes with certain substituted acid iodides. In one embodiment, bis(diethylamino)silane is reacted with benzoyl iodide to provide diiodosilane.

Abstract: In general, the invention provides high pH cleaning compositions for dielectric surfaces such as PETEOS, SiO2, thermal oxide, silicon nitride, silicon, etc. The compositions of the invention afford superior surface wetting, dispersion of particles and organic residues, and prevents redeposition and re-agglomeration of the dispersed residue during cleaning to afford superior cleaning and low defectivity.

Abstract: Described are filtration membranes that include a porous fluoropolymer membrane and thermally stable ionic groups; filters and filter components that include these filtration membranes; methods of making the filtration membranes, filters, and filter components; and method of using a filtration membrane, filter component, or filter to remove unwanted material from fluid.