Patents Assigned to Eon Silicon Solution Inc.
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Patent number: 8982641Abstract: A memory erasing method and a driving circuit thereof are introduced, when cells are selected to be erased, the method includes setting gates of cells which are not selected to be erased and are located at a selected block, drains of all the cells in a selected bank, and the gate of the unselected cells to be floating; supplying a positive voltage to all the sources in a selected bank and their shared P well and N well; and supplying a negative voltage to the gates of the cells located in a selected block and selected to be erased. Accordingly, a positive coupling voltage from P wells is received whenever gates are floating, so as to inhibit erasure of unselected blocks and thereby streamline decoding, thus making it easy to attain further expansion of blocks or banks with a small layout area and partition of sectors in the blocks.Type: GrantFiled: July 3, 2012Date of Patent: March 17, 2015Assignee: EON Silicon Solution Inc.Inventors: Hsiao-Hua Lu, Chih-Ming Kuo, Yu-Chun Wang
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Patent number: 8923083Abstract: A method of identifying a damaged bitline address in a non-volatile memory device is introduced. The non-volatile memory device includes a memory cell array and a plurality of bit lines crossing the memory cell array. Each bit line has a first end and a second end. The bit lines are divided into a first group and a second group. The method includes applying a source voltage (charging) or ground voltage (discharging) to a specific group of bit lines, testing the bit lines in two testing stages (open-circuit testing and short-circuit testing) by the principle that no damaged bit line can be charged or discharged, and acquiring an address data of a damaged bit line according to a status data stored in a page buffering circuit and related to whether a bit line is damaged, thereby dispensing with a calculation process for estimating the address of the damaged bit line.Type: GrantFiled: August 23, 2012Date of Patent: December 30, 2014Assignee: Eon Silicon Solution Inc.Inventors: Takao Akaogi, Tony Chan
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Patent number: 8730739Abstract: A semiconductor device and a method for accelerating erase verification process thereof are introduced, in which a correction unit of erase verification is connected between broken bit lines of the semiconductor device and a page buffer. Grounding switches in the correction unit of erase verification are allowed to connect the broken bit lines to ground during an erase verification process by means of a specific circuit arrangement with respect to the broken lines. Thereby, the earth voltage is received, and further, that the broken bit lines pass the erase verification is identified by the page buffer, further saving time consumed in repeated verifications in the conventional technology significantly.Type: GrantFiled: January 17, 2012Date of Patent: May 20, 2014Assignee: Eon Silicon Solution Inc.Inventor: Tony Chan
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Patent number: 8654591Abstract: In a local word line driver of an NOR flash memory and its flash memory array device, the local word line driver is provided for driving a local word line in a sector of a memory array, and the local word line driver has two transistors including a first transistor and a second transistors, and the first and second transistors are NMOS transistors, and thus achieving the effects of reducing the area occupied by circuits on the local word line driver and the die size, and saving the area for the use by memory units.Type: GrantFiled: December 29, 2010Date of Patent: February 18, 2014Assignee: Eon Silicon Solution Inc.Inventor: Takao Akaogi
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Patent number: 8633744Abstract: A power reset circuit with zero standby current consumption includes a power storage unit, first, second, and third voltage detection units, a switching unit, and a power reset unit. The power storage unit stores electric power by a supply voltage source. The first, second, and third voltage detection units are connected to the supply voltage source to start a switching circuit of the first, second, and third voltage detection units in accordance with a change in a normal supply stage, a shutdown stage, and a voltage ramp-up stage of the supply voltage source, control a voltage level of the power reset unit, and thereby generate the power reset signal. Accordingly, the power reset circuit does not consume current in a standby state (the normal supply stage of the supply voltage source) and thus is characterized by zero current consumption.Type: GrantFiled: February 7, 2013Date of Patent: January 21, 2014Assignee: Eon Silicon Solutions, Inc.Inventors: Hsiao-Hua Lu, Chih-Ming Kuo, Yu-Chun Wang
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Patent number: 8537629Abstract: A method of testing bitlines in a non-volatile memory device is introduced. The non-volatile memory device includes a memory cell array and a plurality of bitlines crossing the memory cell array. Each of the bitlines has a first end and a second end. The bitlines are divided into a first group and a second group. The testing method includes applying a supply voltage (for charging) or a ground voltage (for discharging) to a specific group of bitlines. The bitlines are tested in two testing stages, namely an open-circuit bitline test and a short-circuit bitline test, based on the feature that a defective bitline cannot be charged or discharged. The open-circuit bitline test and the short-circuit bitline test are quick and dispense with a lengthy programmed/erasing process.Type: GrantFiled: July 3, 2012Date of Patent: September 17, 2013Assignee: Eon Silicon Solution Inc.Inventor: Tony Chan
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Patent number: 8476156Abstract: In a manufacturing method of a flash memory structure with a stress area, a better stress effect can be achieved by controlling the manufacturing process of a tunneling oxide layer formed in a gate structure and contacted with a silicon substrate, so that an L-shaped spacer (or a first stress area) and a contact etch stop layer (or a second stress area) of each L-shaped spacer are formed between two gate structures and aligned towards each other to enhance the carrier mobility of the gate structure, so as to achieve the effects of improving a read current, obtaining the required read current by using a lower read voltage, reducing the possibility of having a stress-induced leakage current, and enhancing the data preservation of the flash memory.Type: GrantFiled: December 28, 2011Date of Patent: July 2, 2013Assignee: Eon Silicon Solution Inc.Inventors: Yider Wu, Hung-Wei Chen
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Patent number: 8325518Abstract: A multi-level cell NOR flash memory device includes a plurality of gate lines, a plurality of source regions, a plurality of drain regions, a plurality of source lines, a plurality of bitlines, and a plurality of power lines. The bitlines each have a specific sheet resistance. A specific number of the bitlines are disposed between two adjacent ones of the power lines. Accordingly, the multi-level cell NOR flash memory device is of a high transconductance and uniformity and thereby features an enhanced conforming rate.Type: GrantFiled: December 22, 2010Date of Patent: December 4, 2012Assignee: Eon Silicon Solution Inc.Inventors: Sheng-Da Liu, Yider Wu
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Patent number: 8158519Abstract: In a method of manufacturing a non-volatile memory cell, a self-aligned metal silicide is used in place of a conventional tungsten metal layer to form a polysilicon gate, and the self-aligned metal silicide is used as a connection layer on the polysilicon gate. By using the self-aligned metal silicide to form the polysilicon gate, the use of masks in the etching process may be saved to thereby enable simplified manufacturing process and accordingly, reduced manufacturing cost. Meanwhile, the problem of resistance shift caused by an oxidized tungsten metal layer can be avoided.Type: GrantFiled: October 20, 2008Date of Patent: April 17, 2012Assignee: Eon Silicon Solution Inc.Inventors: Yi-Hsiu Chen, Yung-Chung Lee, Yider Wu
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Patent number: 8017488Abstract: A manufacturing method of a NOR flash memory with phosphorous and arsenic ion implantations mainly implants both phosphorous and arsenic ions on a drain area of a transistor memory unit, and controls specific energy and dosage for the implantation to reduce the defects of a memory device and improve the yield rate of the NOR flash memory.Type: GrantFiled: September 18, 2009Date of Patent: September 13, 2011Assignee: EON Silicon Solutions Inc.Inventors: Sheng-Da Liu, Yider Wu
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Patent number: 8012825Abstract: In a method of manufacturing a double-implant NOR flash memory structure, a phosphorus ion implantation process is performed, so that a P-doped drain region is formed in a semiconductor substrate between two gate structures to overlap with a highly-doped drain (HDD) region and a lightly-doped drain (LDD) region. Therefore, the electric connection at a junction between the HDD region and the LDD region is enhanced and the carrier mobility in the memory is not lowered while the problems of short channel effect and punch-through of LDD region are solved.Type: GrantFiled: January 8, 2009Date of Patent: September 6, 2011Assignee: EON Silicon Solutions Inc.Inventors: Yider Wu, Yung-Chung Lee, Yi-Hsiu Chen
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Patent number: 8008692Abstract: A semiconductor memory structure with stress regions includes a substrate defining a first and a second device zone; a first and a second stress region formed in each of the first and second device zone to yield stress different in level; a barrier plug separating the two device zones from each other; and a plurality of oxide spacers being located between the first stress regions and the barrier plug while in direct contact with the first stress regions. Due to the stress yielded at the stress regions, increased carrier mobility and accordingly, increased reading current can be obtained, and only a relatively lower reading voltage is needed to obtain an initially required reading current. As a result, the probability of stress-induced leakage current is reduced to enhance the data retention ability.Type: GrantFiled: September 18, 2008Date of Patent: August 30, 2011Assignee: EON Silicon Solution Inc.Inventors: Hung-Wei Chen, Yider Wu
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Patent number: 7939423Abstract: A non-volatile semiconductor manufacturing method comprises the steps of making element isolation/insulation films that partitions element-forming regions in a semiconductor substrate; stacking a floating gate on the semiconductor substrate via a first gate insulating film; stacking a second gate insulating film formed on the floating gate, and stacking a control gate formed on the floating gate via the second gate insulating film, and self-aligning source and drain diffusion area with the control gate. In the process of stacking a floating gate by partially etching a field oxide film in a select gate area, followed by floating gate formed in a element-forming region and select gate region, and followed by a chemical mechanical polish(CMP) process, both floating gate and select gate is hereby formed simultaneously. Thereby, when memory cells are miniaturized, the invention allows the process to be simple and reduce the defect density.Type: GrantFiled: April 16, 2010Date of Patent: May 10, 2011Assignee: Eon Silicon Solution Inc.Inventor: Yider Wu
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Publication number: 20110070705Abstract: A manufacturing method of a NOR flash memory with phosphorous and arsenic ion implantations mainly implants both phosphorous and arsenic ions on a drain area of a transistor memory unit, and controls specific energy and dosage for the implantation to reduce the defects of a memory device and improve the yield rate of the NOR flash memory.Type: ApplicationFiled: September 18, 2009Publication date: March 24, 2011Applicant: Eon Silicon Solutions Inc.Inventors: SHENG-DA LIU, YIDER WU
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Patent number: 7529132Abstract: A single-poly non-volatile memory includes a storing node, a control node and a floating gate. While a programming operation is executed, a bit line is provided with a low voltage and a control line is provided with a high voltage so that a coupling voltage occurs in the floating gate. The voltage difference between the floating gate and the storing node is able to send electrons into the floating gate, but the voltage difference between the floating gate and the control node is not enough to expel electrons from the floating gate. While an erasing operation is executed, a bit line is provided with a high voltage and a control line is provided with a low voltage so that a coupling voltage occurs on the floating gate. The voltage difference between the floating gate and the storing node is able to expel electrons from the floating gate, but the voltage difference between the floating gate and the control node is not enough to send electrons into the floating gate.Type: GrantFiled: June 13, 2007Date of Patent: May 5, 2009Assignee: Eon Silicon Solution Inc.Inventors: Chao Yang Chen, Yider Wu, Hsiao Hua Lu
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Publication number: 20080079059Abstract: A non-volatile semiconductor memory device, which is intended to prevent data destruction by movements of electric charges between floating gates and thereby improve the reliability, includes element isolation/insulation films buried into a silicon substrate to isolate stripe-shaped element-forming regions. Formed on the substrate area floating gate via a first gate insulating film and further a control gate via a second gate insulating film. Source and drain diffusion layers are formed in self-alignment with control gates. The second gate insulating film on the floating gate is divided and separated together with the floating gate by slits above the element isolation/insulation films into discrete portions of individual memory cells. The select gate is formed with a STI recess process in advance locally in the select area.Type: ApplicationFiled: April 20, 2007Publication date: April 3, 2008Applicant: Eon Silicon Solution Inc.Inventor: Yider Wu