Abstract: The present technology relates to a fast and efficient heating element based on a thick heterostructure which is monolithically integrated in close proximity to one or more components of a photonic or an electronic circuit. Inventive embodiments also relate to methods of use illustrative heating elements to control or tune the characteristics of the electronic or photonic component(s). Inventive embodiments may be particularly useful in the fast spectral tuning of the emission wavelength of single mode QCLs.

Abstract: Photonic integrated circuits (PICs) are based on quantum cascade (QC) structures. In embodiment methods and corresponding devices, a QC layer in a wave confinement region of an integrated multi-layer semiconductor structure capable of producing optical gain is depleted of free charge carriers to create a low-loss optical wave confinement region in a portion of the structure. Ion implantation may be used to create energetically deep trap levels to trap free charge carriers. Other embodiments include modifying a region of a passive, depleted QC structure to produce an active region capable of optical gain. Gain or loss may also be modified by partially depleting or enhancing free charge carrier density. QC lasers and amplifiers may be integrated monolithically with each other or with passive waveguides and other passive devices in a self-aligned manner. Embodiments overcome challenges of high cost, complex fabrication, and coupling loss involved with material re-growth methods.