Abstract: On a carrier (1) an adhesion layer (4), an ASIC chip (2) and a sensor chip (3) are arranged one above another. An interchip connection (5) is provided for electrically connecting the chips among one another, and an ASIC connection (6) is provided for externally electrically connecting the circuit integrated in the ASIC chip.

Abstract: The invention relates to a directional coupler (1), comprising a first high-frequency line (2) for feeding a first high-frequency signal, a second high-frequency line (3) for feeding a second high-frequency signal, and a coupling line (4) for outputting signals from the first and the second high-frequency lines (2, 3), wherein the coupling line (4) comprises resistive segments (5a-5c, 15a-15c, 25a-25c, 35a-35c, 45a), each comprising a predetermined impedance. Coupling properties and resistive damping and adapting properties can be integrated in the coupling line (4). A compact and low-cost construction of the directional coupler (1) is thus made possible.

Abstract: A microphone package wherein an MEMS microphone chip (MIC) is mounted on a substrate (SUB) and is sealed with a cover (ABD) with respect to the substrate. The membrane (MMB) of the microphone chip is connected to a sound entry opening (SEO) in the substrate via an acoustic channel. As a result of defined dimensioning of, in particular, the cross section and length of sound entry opening and channel, an acoustic low-pass filter is formed, the ?3 dB attenuation point of which is significantly below the natural resonance of microphone membrane and package.

Abstract: A heating module includes a housing with an opening, and a PTC ceramic heating element arranged in the housing having an inner face facing toward the opening, an outer face facing away from the opening and two end faces connecting the inner and outer faces, wherein the inner face is at least partially matched to the opening.

Abstract: A mechanically improved component comprising a chip in a cavity and a stress-reduced attachment is specified. A component comprises an opening in a housing, an opaque cover or a mechanically flexible line connector, which is attached to two locations.

Abstract: A bulk acoustic wave filter of a ladder-type structure includes a series arm and at least a series arm resonator which is disposed in the series arm, such that the series arm is distributed in series arm sections between an input terminal and an output terminal. The bulk acoustic wave filter further includes a first parallel arm that includes a parallel arm resonator and an inductivity connected in series between the series arm and a reference terminal, and at least a second parallel arm that includes a parallel arm resonator. The first parallel arm and the at least one second parallel arm are connected in parallel between a common one of the series arm sections and the reference terminal.

Abstract: A device includes a matching stage coupled between a first signal terminal and a second signal terminal. A signal path extends between the first signal terminal and the second terminal. An adjustable impedance element is connected to the signal path. A detection circuit is coupled to the signal path and configured to derive matching information. A control circuit is coupled between the detection circuit and the adjustable impedance element. The control circuit is configured to control the adjustable impedance element.

Abstract: A solderable contact for use with an electrical component includes a pad metallization on a substrate, and an under bump metallization over at least part of the pad metallization. The under bump metallization is in an area for receiving solder. The pad metallization is structured to reveal parts of the substrate surface. The under bump metallization is in direct contact with the parts of the substrate.

Abstract: Electric components and methods of manufacture are specified. An electric component comprises a carrier having a recess which penetrates the carrier and also a first chip and external contact area. The first chip is arranged in the recess in the carrier. The external contact area is provided for connecting up the first chip to an external circuit environment.

Abstract: A highly integrated electrical module is specified which comprises a filter circuit and a balun circuit. The space requirement is reduced by circuit components of the balun circuit being arranged at least in part on an inner side of the housing of the filter circuit.

Abstract: A module substrate includes a multilayer substrate that includes a plurality of layers, a bottommost of the layers being a ceramic layer. Solderable contacts, which include fired pads composed of a conductive paste, are applied to the bottommost ceramic layer. A covering layer overlies the pads. The covering layer covers all outer edges of the pads. A window is cut out of the covering layer. A metallic coating is applied to each pad exclusively within the window.

Abstract: An electric component arrangement is described, comprising a semiconductor component (1) and a varistor body (2), which is contact-connected to the semiconductor component in order to protect the latter against electrostatic discharges. The semiconductor component and the varistor body are arranged on a common carrier (3) containing a highly thermally conductive ceramic.

Abstract: A heating element with a ceramic body that has PTC properties is specified. The heating element has electrodes that are arranged on ceramic body. Both the ceramic body and the electrodes are lead-free.

Abstract: A method of offsetting a mismatch due to user interaction when handling a portable wireless terminal in which antenna matching is changed from inductive matching to capacitive matching in response to a reactance change exceeding a threshold level and vice versa when an opposite change is detected. An antenna interface module (44) is coupled between a RF output or input stage (25 or 33) and an antenna (48 or 50). The antenna interface module includes first and second switches (SW1/1, SW1/2 or SW2/1, SW2/2), a first matching circuit including an inductive reactance (68 or 96) coupled between the power amplifier and the first switch and a second matching circuit including a capacitive reactance (68 or 92) is coupled between the RF output or input stage and the second switch (SW1/1 or SW2/1).

Abstract: A method for tuning a resonant frequency of a piezoelectric component is disclosed. The piezoelectric component includes a transducer extending in three spatial directions. The resonant frequency depends on an extension in at least one of the spatial directions and/or on a material-dependent elasticity modulus. The transducer includes a layered structure with at least two first electrodes and at least one second electrode, which is disposed between the two first electrodes. In the method, a DC voltage is applied to at least one of the at least two first electrodes and the at least one second electrode, so that a change of the resonant frequency results due to a change to the extension in the one spatial direction and the elasticity modulus. A control voltage with an excitation frequency is applied, the excitation frequency substantially corresponding to the modified resonant frequency. This generates a vibration of the piezoelectric component.

Abstract: A switchable capacitive element having an adjustable capacitance and an improved quality factor is specified. To this end, the characteristic variables of the switchable capacitive element are optimized in accordance with the equations cited in the description.

Abstract: Bandgap reference circuit, comprising a voltage generator (VG) designed to produce a voltage or a current proportional to absolute temperature, a supply circuit (SC), designed to produce a supply for operating the voltage generator (VG), comprising a bias element (BS) and a control element (CS), and a bias circuit (BC), designed to produce a bias for operating the voltage generator (VG), comprising a bias element (BB) and a control element (CB). At least one of the control element (CS) of the supply circuit (SC) and the control element (CB) of the bias circuit (BC) comprises a pseudomorphic high-electron-mobility transistor or a hetero-junction bipolar transistor and/or at least one of the bias element (BS) of the supply circuit (SC) and the bias element (BB) of the bias circuit (BC) comprises a long-gate pseudomorphic high-electron-mobility transistor or a resistor.

Abstract: A band-stop filter is proposed which is constructed on a multilayered substrate and consists of a parallel circuit comprising a bandpass filter and a high-pass filter. The two filters are at least partly realized in the form of LC-elements integrated into the substrate. Further circuit components can be arranged as discrete components on the substrate. In the filter branch having the bandpass filter, an electroacoustic resonator is arranged in a transverse branch to ground. By means of the filter, a wide stop band is obtained, while the passband or passbands can comprise a plurality of radio bands.

Abstract: A method of manufacturing a filter circuit including series and parallel coupled BAW resonators is given which compensates for frequency tolerances of the resonators which are due to the manufacturing process. The new method includes measuring a resonance frequency of at least one type of the BAW resonators produced on a wafer and defining a deviation from a desired frequency. A trimming layer is then deposited onto the entire wafer. At last, a thickness portion of the trimming layer is selectively removed, the portion being dependent on a location on the wafer and on the calculated deviation of the resonance frequency at this location.

Abstract: A method for increasing the ESD pulse stability of an electrical component is disclosed. An electrical component is pre-aged by means of an aging pulse generated by a pulse generator. The degradation of an electrical characteristic curve of the component by ESD pulses that occur during operation of the electrical component is improved by the pre-aging.