Abstract: A method for accurately simulating the timing and power behavior of digital MOS circuits is provided. The method includes piece-wise linear modeling of transistors, dynamic and static construction of channel connected components, event driven simulation and current measuring capabilities for power supplies, grounds, and individual resistors and transistors.
Abstract: A method for accurately simulating the timing and power behavior of digital MOS circuits is provided. The method includes piece-wise linear modeling of transistors, dynamic and static construction of channel connected components, event driven simulation and current measuring capabilities for power supplies, grounds, and individual resistors and transistors.