Abstract: There is provided a method of producing multiple semiconductor components on a substrate, said method comprising the steps of: forming a predetermined relief pattern on a surface of said substrate; and epitaxially depositing a layer formed of a mixture of two or more Group III elements and two or more Group V elements on said surface; wherein said relief pattern results in said layer deposited in a single step forming with a different ratio between said Group V elements within areas having different relief pattern characteristics so as to provide different band gaps within said different areas.