Abstract: A LED (Light Emitting Diode) structure with a contact layer of a multiple structure includes a nucleation layer disposed on a substrate; a conductive buffer layer disposed on the nucleation layer; an active layer disposed between an upper and a lower confinement layer, wherein the structure of active layer includes a semiconductor material mainly doped with III-V group; the contact layer made of the multilayer structure disposed on the upper confinement layer; and a transparent electrode disposed on the contact layer made of a multilayer structure; and an electrode contacted with the conductive buffer layer and isolated from the active layer and the transparent electrode.