Abstract: Methods for forming a dual damascene dielectric structure in a porous ultra-low-k (ULK) dielectric material by using gas-cluster ion-beam processing are disclosed. These methods minimize hard-mask layers during dual damascene ULK processing and eliminate hard-masks in the final ULK dual damascene structure. Methods for gas-cluster ion-beam etching, densification, pore sealing and ashing are described that allow simultaneous removal of material and densification of the ULK interfaces. A novel ULK dual damascene structure is disclosed with densified interfaces and no hard-masks.

Abstract: A method and apparatus 300 for better controlling scanning of a workpiece 330 through an ion beam path 306 provide for mounting a workpiece 330 on an elongated member, partially repetitively rotating the elongated member 500 around a point of rotation 368 to make repetitive scans of the workpiece 330 along and arcuate path 504 and bending the elongated member 500 at a joint 322 to move the one and out of the ion beam path 306 to facilitate attachment and removal of individual workpieces 330. A motor 315 used for the rotating may be suspended within a partial vacuum enclosure 304 against gravity for raising and lowering the elongated member and 500 a workpiece 306 for linear vertical scanning.

Abstract: An ionizer for forming a gas-cluster ion beam is disclosed including inlet and outlet ends partially defining an ionization region traversed by a gas-cluster jet and one or more plasma electron source(s) for providing electrons to the ionizing region for ionizing at least a portion of the gas-clusters to form a gas-cluster ion beam. One or more sets of substantially linear rod electrodes may be disposed substantially parallel to and in one or more corresponding partial, substantially cylindrical pattern(s) about the gas-cluster jet axis, wherein some sets are arranged in substantially concentric patterns with differing radii. In certain embodiments, the ionizer includes one or more substantially linear thermionic filaments disposed substantially parallel to the gas-cluster jet axis, heating means, electrical biasing means to judiciously bias sets of the linear rod electrodes with respect to the thermionic filaments to achieve electron repulsion.

Abstract: A self-aligned MISFET transistor (500H) on a silicon substrate (502), but having a graded SiGe channel or a Ge channel. The channel (526) is formed using gas-cluster ion beam (524) irradiation and provides higher channel mobility than conventional silicon channel MISFETs. A manufacturing method for such a transistor is based on a replacement gate process flow augmented with a gas-cluster ion beam processing step or steps to form the SiGe or Ge channel. The channel may also be doped by gas-cluster ion beam processing either as an auxiliary step or simultaneously with formation of the increased mobility channel.

Abstract: Method for removing and/or redistributing material in the trenches and/or vias of integrated circuit interconnect structures by a gas cluster ion beam (GCIB) is described to improve the fabrication process and quality of metal interconnects in an integrated circuit. The process entails opening up an undesired ‘necked in’ region at the entrance to the structure, re-depositing the barrier metal from thicker areas such as the neck or bottom of the structure to the side walls and/or removing some of the excess and undesired material on the bottom of the structure by sputtering. The GCIB process may be applied after the barrier metal deposition and before the copper seed layer/copper electroplating or the process may be applied after the formation of the copper seed layer and before electroplating. The method may extend the usability of the known interconnect deposition technologies to next generation integrated circuits and beyond.

Abstract: Methods and apparatus are disclosed for measuring controlling characteristics of clusters in a cluster ion beam, including average cluster ion velocity {overscore (v)}, average cluster ion mass {overscore (m)}, average cluster ion energy ?, average cluster ion charge state {overscore (q)}, average cluster ion mass per charge ( m q ) average , and average energy/charge ( E q ) average . The measurements are employed in gas cluster ion beam processing systems to monitor and control gas cluster ion beam characteristics that are critical for optimal processing of workpieces by gas cluster ion beam irradiation.

Abstract: Apparatus and methods for improving processing of workpieces with gas-cluster ion beams and modifying the gas-cluster ion energy distribution in the GCIB. In a reduced-pressure environment, generating an energetic gas-cluster ion beam and subjecting the beam to increased pressure region.

Abstract: Apparatus and methods for improving beam stability in high current gas-cluster ion beam systems by reducing the frequency of transients occurring in the vicinity of the ionizer through use of shielding conductors and distinct component electrical biasing to inhibit backward extraction of ions from the ionizer towards the gas-jet generator.

Abstract: Capping layer or layers on a surface of a copper interconnect wiring layer for use in interconnect structures for integrated circuits and methods of forming improved integration interconnection structures for integrated circuits by the application of gas-cluster ion-beam processing. Reduced copper diffusion and improved electromigration lifetime result and the use of selective metal capping techniques and their attendant yield problems are avoided.

Abstract: An ionizer for forming a gas-cluster ion beam is disclosed including inlet and outlet ends partially defining an ionization region traversed by a gas-cluster jet and one or more plasma electron source(s) for providing electrons to the ionizing region for ionizing at least a portion of the gas-clusters to form a gas-cluster ion beam. One or more sets of substantially linear rod electrodes may be disposed substantially parallel to and in one or more corresponding partial, substantially cylindrical pattern(s) about the gas-cluster jet axis, wherein some sets are arranged in substantially concentric patterns with differing radii. In certain embodiments, the ionizer includes one or more substantially linear thermionic filaments disposed substantially parallel to the gas-cluster jet axis, heating means, electrical biasing means to judiciously bias sets of the linear rod electrodes with respect to the thermionic filaments to achieve electron repulsion.

Abstract: In an ion bean acceleration system, transient electrical arc suppression and ion beam accelerator biasing circuitry. Two-terminal circuitry, connectable in series, for suppressing arcs by automatically sensing arc conditions and switch from at least a first operating state providing a relatively low resistance electrical pathway for current between source and load terminals to at least a second, relatively high resistance electrical pathway. Selection of circuit component characteristics permits controlling the delay in returning from the second state to the first state after the arc has been suppressed.

Abstract: Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.

Abstract: Methods for forming a dual damascene dielectric structure in a porous ultra-low-k (ULK) dielectric material by using gas-cluster ion-beam processing are disclosed. These methods minimize hard-mask layers during dual damascene ULK processing and eliminate hard-masks in the final ULK dual damascene structure. Methods for gas-cluster ion-beam etching, densification, pore sealing and ashing are described that allow simultaneous removal of material and densification of the ULK interfaces. A novel ULK dual damascene structure is disclosed with densified interfaces and no hard-masks.

Abstract: Methods of densifying a porous ultra-low-k (ULK) dielectric material by using gas-cluster ion-beam processing are disclosed. Methods for gas-cluster ion-beam etching, densification, pore sealing and ashing are described that allow simultaneous removal of material and densification of the ULK interfaces. A novel ULK dual damascene structure is disclosed with densified interfaces and no hard-masks.

Abstract: Apparatus and methods for improving beam stability in high current gas-cluster ion beam systems by reducing the frequency of transients occurring in the vicinity of the ionizer through use of shielding conductors and distinct component electrical biasing to inhibit backward extraction of ions from the ionizer towards the gas-jet generator.

Abstract: Apparatus and methods for improving processing of workpieces with gas-cluster ion beams and modifying the gas-cluster ion energy distribution in the GCIB. In a reduced-pressure environment, generating an energetic gas-cluster ion beam and subjecting the beam to increased pressure region.

Abstract: Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.

Abstract: Methods and apparatus are described for irradiating one or more substrate surfaces with accelerated gas clusters including strain-inducing atoms for blanket and/or localized introduction of such atoms into semiconductor substrates, with additional, optional introduction of dopant atoms and/or C. Processes for forming semiconductor films infused into and/or deposited onto the surfaces of semiconductor and/or dielectric substrates are also described. Such films may be doped and/or strained as well.

Abstract: Methods and apparatus for measuring the distribution of cluster ion sizes in a gas cluster ion beam (GCIB) and for determining the mass distribution and mass flow of cluster ions in a GCIB processing system without necessitating the rejection of a portion of the beam through magnetic or electrostatic mass analysis. The invention uses time-of-flight measurement to estimate or monitor cluster ion size distribution either before or during processing of a workpiece. The measured information is displayed and incorporated in automated control of a GCIB processing system.

Abstract: Methods and apparatus are disclosed for measuring controlling characteristics of clusters in a cluster ion beam, including average cluster ion velocity {overscore (v)}, average cluster ion mass {overscore (m)}, average cluster ion energy {overscore (E)}, average cluster ion charge state {overscore (q)}, average cluster ion mass per charge 1 ( m q ) average ,