Abstract: A method of performing scans on a semiconductor wafer is provided wherein the scanning motion is actuated through a system including a linear one-dimensional motion of the scan head; and rotational motion of a scanned wafer and an associated wafer holder. The wafer to be scanned is placed in a vacuum cryogenic enclosure, into the walls of which has been set an infrared window such that transmitted and reflected radiation from probing beams is perceptible by detectors outside the cryogenic enclosure. The scanning of the wafer is conducted through infrared transmittance and reflectance measurements of a probe beam focused on a point on the scanned wafer which is pumped by a pulsed laser.

Abstract: An FPA includes a substrate; a plurality of spaced-apart implant regions deposited in the substrate; a plurality of supplemental metal contacts, one supplemental metal contact of the plurality of supplemental metal contacts electrically connected to one implant region of the plurality of implant regions; a plurality of metal conductors electrically connecting the plurality of supplemental metal contacts; and a primary metal contact, electrically connected to the plurality of supplemental metal contacts by at least one of the metal conductors of the plurality of metal conductors. The pixel can include an Indium bump electrically connected to the primary metal contact.

Abstract: A Terahertz Source and Detector device is provided that includes a nanostructured metasurface configured to transmit fully into a layer of absorbing material below the metasurface to achieve transparent conductivity in the visible spectrum region, wherein the metasurface is composed of crystalline material with very high mobility. The crystalline material can be composed of HgCdTe. The HgCdTe material can have a bandgap of about 700 meV. The intrinsic carrier concentration can be 1012 cm?3 at 300K.

Abstract: A method of contactless, non-destructive contamination-free 2-dimensional mapping of the cutoff wavelength (or bandgap) and the minority carrier lifetime, which is measured through photo-excited excess free carrier absorption decay method, in semiconductor thin film materials and wafers, including typical semiconductor wafers such as Si, Ge, GaAs, and GaSb as well as narrow gap semiconductors such as InSb, type II superlattices (T2SLs) and HgCdTe, at variable temperatures from room temperature down to 2K, utilizing a three-chamber arrangement in which the external chamber and cold chamber are held at ultra-high vacuum and the innermost (sample) chamber is held at cryogenic temperature to cool wafer or thin film samples through gaseous thermal transfer media to cryogenic temperatures down to 1.9 K under pumping.

Abstract: A multiband IR adjunct (MIRA) sensor to spectroscopically determine the content and the concentration of chemical composition of a targeted object, includes a sensor housing, a first front optics in a first optical channel, a second front optics in the first optical channel, an acousto-optic tunable filter (AOTF), a photo detector (PD), a set of back optics in the first optical channel that focuses polarized narrow-band light beams received from the AOTF device onto the PD, the PD converting the polarized narrow-band light beams into an electrical signal, and a data acquisition unit signal-connected to the PD, the data acquisition unit collecting the electrical signals. Multiple optical channels can be provided within the housing to analyze UV/VIS/near infrared (NIR), short-wavelength infrared (SWIR), mid-wavelength infrared (MWIR), and LWIR wavelength ranges respectively.

Abstract: In a crystal growth furnace having an array of vertically arranged heaters to provide controlled heating zones within a chamber, and a crucible for holding crystal material, wherein the crystal is grown vertically through the heating zones, the improvement includes a laser mounted outside the chamber which radiates a beam of energy to locally melt precipitates and inclusions. The furnace includes a mechanism to position the laser vertically to, at or near the interface between the formed crystal and crystal melt material above the formed crystal. The crystal material can be CdZnTe.

Abstract: A multiband IR adjunct (MIRA) sensor to spectroscopically determine the content and the concentration of chemical composition of a targeted object, includes a sensor housing, a first front optics in a first optical channel, a second front optics in the first optical channel, an acousto-optic tunable filter (AOTF), a photo detector (PD), a set of back optics in the first optical channel that focuses polarized narrow-band light beams received from the AOTF device onto the PD, the PD converting the polarized narrow-band light beams into an electrical signal, and a data acquisition unit signal-connected to the PD, the data acquisition unit collecting the electrical signals. Multiple optical channels can be provided within the housing to analyze UV/VIS/near infrared (NIR), short-wavelength infrared (SWIR), mid-wavelength infrared (MWIR), and LWIR wavelength ranges respectively.

Abstract: A method of hybridizing an FPA having an IR component and a ROIC component and interconnects between the two components, includes the steps of: providing an IR detector array and a Si ROIC; depositing a dielectric layer on both the IR detector array and on the Si ROIC; patterning the dielectric on both components to create openings to expose contact areas on each of the IR detector array and the Si ROIC; depositing indium to fill the openings on both the IR detector array and the Si ROIC to create indium bumps, the indium bumps electrically connected to the contact areas of the IR detector array and the Si ROIC respectively, exposed on a top surface of the IR detector array and the Si ROIC; activating exposed dielectric layers on the IR detector array and the Si ROIC in a plasma; and closely contacting the indium bumps of the IR detector array and the Si ROIC by bonding together the exposed dielectric surfaces of the IR detector array and the Si ROIC.

Abstract: A multiband IR adjunct (MIRA) sensor to spectroscopically determine the content and the concentration of chemical composition of a targeted object, includes a sensor housing, a first front optics in a first optical channel, a second front optics in the first optical channel, an acousto-optic tunable filter (AOTF), a photo detector (PD), a set of back optics in the first optical channel that focuses polarized narrow-band light beams received from the AOTF device onto the PD, the PD converting the polarized narrow-band light beams into an electrical signal, and a data acquisition unit signal-connected to the PD, the data acquisition unit collecting the electrical signals. Multiple optical channels can be provided within the housing to analyze UV/VIS/near infrared (NIR), short-wavelength infrared (SWIR), mid-wavelength infrared (MWIR), and LWIR wavelength ranges respectively.

Abstract: A Terahertz Source and Detector device is provided that includes a nanostructured metasurface configured to transmit fully into a layer of absorbing material below the metasurface to achieve transparent conductivity in the visible spectrum region, wherein the metasurface is composed of crystalline material with very high mobility. The crystalline material can be composed of HgCdTe. The HgCdTe material can have a bandgap of about 700 meV. The intrinsic carrier concentration can be 1012 cm?3 at 300K.