Patents Assigned to Epispeed S.A.
  • InGaAs/GaAs lasers on silicon produced by LEPECVD and MOCVD
    Patent number: 7588954
    Abstract: Method for making an InGaAs/GaAs quantum well laser (10) on a Silicon substrate (15.1). The method comprises the steps: Formation of a virtual Germanium substrate (15) on the Silicon substrate (15.1) by means of a low-energy plasma-enhanced chemical vapour deposition (LEPECVD). The virtual Germanium substrate (15) comprises a pure Germanium layer (15.3). Formation of a Gallium Arsenide structure on the virtual Germanium substrate (15) by means of a metal organic chemical vapour deposition process.
    Type: Grant
    Filed: September 4, 2004
    Date of Patent: September 15, 2009
    Assignee: Epispeed S.A.
    Inventors: Hans Von Kaenel, Isabelle Sagnes, Guillaume Jacques Saint-Girons, Sophie Bouchoule