Abstract: A structure of a light emitting diode (LED) having high brightness is disclosed. This LED includes a substrate on a first electrode, a first cladding layer of a first conductivity type on the substrate, an active layer on the first cladding layer, a second cladding layer of a second conductivity type on the active layer, a window layer of the second conductivity type on the second cladding layer, wherein the electrical resistivity of the window layer is less than that of the second cladding layer, a contact layer of the second conductivity type on the window layer for providing ohmic contact, and a conductive transparent oxide layer on the contact layer, wherein the electrical resistivity of the conductive transparent oxide layer is less than that of the window layer and the contact layer.
Type:
Grant
Filed:
April 18, 1997
Date of Patent:
May 2, 2000
Assignee:
Epistar Corp.
Inventors:
Biing-Jye Lee, Ming-Jiunn Jou, Jacob C. Tarn, Chiung-Sheng Shyu