Patents Assigned to Epistar Corporation
  • Patent number: 10804435
    Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer emitting an UV light, formed between the first semiconductor layer and the second semiconductor layer; a first transparent conductive layer formed on the second semiconductor layer, the first transparent conductive layer including metal oxide; and a second transparent conductive layer formed on the first transparent conductive layer, the second transparent conductive layer including graphene, wherein the first transparent conductive layer is continuously formed over a top surface of the second semiconductor layer, the first transparent conductive layer comprises a thickness smaller than 10 nm.
    Type: Grant
    Filed: August 25, 2017
    Date of Patent: October 13, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Chang-Tai Hisao, I-Lun Ma, Hao-Yu Chen, Shu-Fen Hu, Ru-Shi Liu, Chih-Ming Wang, Chun-Yuan Chen, Yih-Hua Renn, Chien-Hsin Wang, Yung-Hsiang Lin
  • Patent number: 10791601
    Abstract: A light-emitting device has a stabilizing-current circuit, a current source having a high electron mobility transistor, and a light source electrically connected to the stabilizing-current circuit and the current source.
    Type: Grant
    Filed: March 14, 2019
    Date of Patent: September 29, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Chao-Kai Chang, Chen-Yu Wang, Chang-Hseih Wu, Jai-Tai Kuo
  • Patent number: 10790412
    Abstract: A manufacturing method of a light-emitting device includes steps of: providing a substrate with a top surface, wherein the top surface comprises a plurality of concavo-convex structures; forming a semiconductor stack on the top surface; forming a trench in the semiconductor stack to define a plurality of second semiconductor stacks and expose a first upper surface; forming a scribing region which extends from the first upper surface into the semiconductor stack and exposes a side surface of the semiconductor stack to define a plurality of first semiconductor stacks; removing a portion of the plurality of first semiconductor stacks and a portion of the concavo-convex structures trough the region to form a first side wall of each of the first semiconductor stack; and dividing the substrate along the region; wherein the first side wall and the top surface form an acute angle ? between thereof, 30°???80°.
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: September 29, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Yen-Tai Chao, Sen-Jung Hsu, Tao-Chi Chang, Wei-Chih Wen, Ou Chen, Chun-Hsiang Tu, Yu-Shou Wang, Jing-Feng Huang
  • Patent number: 10784404
    Abstract: A light-emitting device, includes a substrate structure, including a base portion having a surface and a plurality of protrusions formed on the base portion; a buffer layer covering the plurality of protrusions and the surface; and III-V compound semiconductor layers formed on the buffer layer; wherein one of the plurality of protrusions has a height not greater than 1.5 ?m; wherein the light-emitting device has a full width at half maximum (FWHM) of smaller than 250 arcsec in accordance with a (102) XRD rocking curve.
    Type: Grant
    Filed: April 29, 2019
    Date of Patent: September 22, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Peng Ren Chen, Yu-Shan Chiu, Wen-Hsiang Lin, Shih-Wei Wang, Chen Ou
  • Patent number: 10784427
    Abstract: A light-emitting device includes a first edge to a fourth edge; a semiconductor stack formed on a substrate, including a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode; and a second electrode formed on the second semiconductor layer, including a second pad electrode and a second finger electrode; wherein the first finger electrode is disposed at and along the first edge; and the first finger electrode includes a first overlapping portion overlapping the second finger electrode; the second finger electrode includes a second overlapping portion overlapping the first finger electrode and a non-overlapping portion that does not overlap the first finger electrode; and the second overlapping portion is not parallel with the first overlapping portion and the non-overlapping portion is not parallel with the first edge.
    Type: Grant
    Filed: September 23, 2019
    Date of Patent: September 22, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Li-Ming Chang, Tzung-Shiun Yeh, Chien-Fu Shen, Yu-Rui Lin, Chen Ou, Hsin-Ying Wang, Hui-Chun Yeh
  • Publication number: 20200295225
    Abstract: A method of processing light-emitting elements includes: transferring a plurality of light-emitting elements from original wafers or next-stage carriers, based on a predetermined pattern. The predetermined pattern arranges two adjacent LED groups in a first direction on the original wafer or carriers to be placed on two non-adjacent positions in the first direction on the next-stage carriers. The light-emitting elements on the original wafer have a horizontal wafer pitch and a vertical wafer pitch. The light-emitting elements on each of the next-stage carriers have a first horizontal pitch and a first vertical pitch. The first horizontal pitch is greater than the horizontal wafer pitch, or the first vertical pitch is greater than the vertical wafer pitch. Besides, a light-emitting element device using the aforementioned method is also provided.
    Type: Application
    Filed: March 13, 2020
    Publication date: September 17, 2020
    Applicant: EPISTAR CORPORATION
    Inventors: Min-Hsun HSIEH, Chang-Lin LEE
  • Patent number: 10777764
    Abstract: A light-emitting device includes a light-emitting element having a first electrode and a second electrode, a carrier, a first contact and a second contact. The first contact is arranged on the carrier and is electrically connected to the first electrode. The second contact is arranged on the carrier and is electrically connected to the second electrode. The first contact has a contour similar with that of the first electrode. The second contact has a contour similar with that of the second electrode.
    Type: Grant
    Filed: December 26, 2018
    Date of Patent: September 15, 2020
    Assignee: Epistar Corporation
    Inventors: Yih-Hua Renn, Shau-Yi Chen, Ching-Tai Cheng, Aurelien Gauthier-Brun
  • Patent number: 10770635
    Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack with a first (top) surface, a bottom surface and at least one side surface connected to the first surface and the bottom surface, a light-reflective enclosure with a second (top) surface, a contact electrode formed on the bottom surface of the light-emitting layer, and a wavelength converting layer. Moreover, the light-reflective enclosure surrounds the side surface of the light-emitting stack and exposes to the first surface. The wavelength converting layer covers the first surface and the second surface. In addition, the second surface has a plurality of fine concave structures distributed on the second surface.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: September 8, 2020
    Assignee: Epistar Corporation
    Inventors: Chien-Liang Liu, Ming-Chi Hsu, Jen-Chieh Yu
  • Patent number: 10770636
    Abstract: The invention discloses a light-emitting device and a manufacturing method thereof. The light-emitting device comprising: a light-emitting unit, the light-emitting unit comprises a non-light-emitting element and a light-emitting diode; a reflective layer covering the non-light-emitting element; a light-transmitting layer covering the reflective layer and the light-emitting diode; a metal connection layer electrically connecting the non-light-emitting element and the light-emitting diode.
    Type: Grant
    Filed: February 13, 2019
    Date of Patent: September 8, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Shih-An Liao, Ming-Chi Hsu
  • Patent number: 10770626
    Abstract: In accordance with certain embodiments, electronic devices feature a polymeric binder, a frame defining an aperture therethrough, and a semiconductor die (e.g., light-emitting or a light-detecting element) suspended in the binder and within the aperture of the frame.
    Type: Grant
    Filed: January 22, 2020
    Date of Patent: September 8, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Michael A. Tischler, Alborz Amini, Thomas Pinnington, Henry Ip, Gianmarco Spiga
  • Patent number: 10756960
    Abstract: A light-emitting device comprises a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a reflector between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the reflector and the second light-emitting semiconductor stack; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap an
    Type: Grant
    Filed: January 25, 2019
    Date of Patent: August 25, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Chih-Chiang Lu, Yi-Chieh Lin, Wen-Luh Liao, Shou-Lung Chen, Chien-Fu Huang
  • Patent number: 10756134
    Abstract: A light-emitting device includes: a substrate comprising a first side; multiple semiconductor stacks on the first side and separated from each other, wherein each of the multiple semiconductor stacks comprises a light extraction area; multiple electrode pads on the multiple semiconductor stacks; and a blocking layer between one of the semiconductor stacks and the substrate. The multiple semiconductor stacks comprises a first semiconductor stack and a second semiconductor stack, and the first semiconductor stack and the second semiconductor stack are independently controlled to emit light.
    Type: Grant
    Filed: March 20, 2018
    Date of Patent: August 25, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Hsin-Chan Chung, Wen-Luh Liao, Shih-Chang Lee
  • Patent number: 10756067
    Abstract: The present application discloses a light-emitting device including a first support structure having a first surface, a plurality of light-emitting elements arranged on the first surface, and a first adhesive layer arranged on the first support structure. Each light-emitting element has a side wall, a bottom surface, a first electrode pad, and a second electrode pad arranged on the bottom surface. The first adhesive layer surrounds the side wall and does not directly contact the bottom surface. The first support structure includes a plurality of through holes located on positions corresponding to the first electrode pad and the second electrode pad.
    Type: Grant
    Filed: January 26, 2018
    Date of Patent: August 25, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Jui-Hsien Chang, Been-Yu Liaw, Cheng-Nan Han, Min-Hsun Hsieh
  • Patent number: 10749075
    Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer; a plurality of first trenches penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer; a second trench penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer, wherein the second trench is disposed near an outmost edge of the active layer, and surrounds the active layer and the plurality of first trenches; a patterned metal layer formed on the second semiconductor layer and formed in one of the plurality of first trenches or the second trench; and a first pad portion and a second pad portion both formed on the second semiconductor layer and electrically connecting the second semiconductor layer and the first semiconductor layer respectively.
    Type: Grant
    Filed: July 23, 2019
    Date of Patent: August 18, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Chao-Hsing Chen, Jia-Kuen Wang, Tzu-Yao Tseng, Tsung-Hsun Chiang, Bo-Jiun Hu, Wen-Hung Chuang, Yu-Ling Lin
  • Patent number: 10749076
    Abstract: A light-emitting device includes a light-emitting structure with an electrode layer, a light-transmitting body, a reflective layer and a metal bump. The light-transmitting body covers the light-emitting structure, and has a first side surface and a second side surface which are substantially perpendicular to each other. The reflective layer covers the first side surface without covering the second side surface. The metal bump is directly formed on the electrode layer.
    Type: Grant
    Filed: June 29, 2017
    Date of Patent: August 18, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Liu Chun-Hung, Liao Shih-An, Liu Chien-Liang
  • Patent number: 10749077
    Abstract: An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: August 18, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Chun-Yu Lin, Yung-Fu Chang, Rong-Ren Lee, Kuo-Feng Huang, Cheng-Long Yeh, Yi-Ching Lee, Ming-Siang Huang, Ming-Tzung Liou
  • Patent number: D894850
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: September 1, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Chun-Fu Tsai, Yao-Ning Chan, Yi-Tang Lai, Yi-Ming Chen, Shih-Chang Lee
  • Patent number: D894851
    Type: Grant
    Filed: March 4, 2019
    Date of Patent: September 1, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Min-Hsun Hsieh, Tzu-Hsiang Wang, Chi-Chih Pu, Ya-Wen Lin
  • Patent number: D894852
    Type: Grant
    Filed: April 26, 2019
    Date of Patent: September 1, 2020
    Assignee: EPISTAR CORPORATION
    Inventor: Wen-Luh Liao
  • Patent number: D897296
    Type: Grant
    Filed: December 27, 2018
    Date of Patent: September 29, 2020
    Assignee: Epistar Corporation
    Inventors: Wei-Shan Hu, Ching-Tai Cheng, Pei-Hsuan Lan