Patents Assigned to Epistar Corporation
  • Patent number: 10429053
    Abstract: A light source includes a socket connection, a base connected to the socket connection, an LED unit, a mount and a heat conductive material. The socket connection is capable of connecting to a source of electricity. The mount is disposed into the base, and has a top surface on which the LED unit are disposed and a side surface devoid of the LED unit. The heat conductive material directly contacts the LED unit and the side surface of the mount. The heat conductive material enters into a space flanked by the mount and the base and is substantially translucent or transparent such that light emitted from the LED unit is able to pass through the heat conductive material.
    Type: Grant
    Filed: February 3, 2017
    Date of Patent: October 1, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Densen Cao, Steven D Jensen
  • Patent number: 10424703
    Abstract: A method for producing a light reflecting layer-including optical semiconductor element includes the steps of temporarily fixing electrode surfaces of a plurality of optical semiconductor elements each having the electrode surface provided with an electrode, a light emitting surface opposing the electrode surface and provided with a light emitting layer, and a connecting surface connecting a peripheral end edge of the electrode surface to that of the light emitting surface to a temporarily fixing sheet at spaced intervals to each other; filling a first gap between the optical semiconductor elements that are next to each other with a light reflecting sheet and forming a light reflecting layer on the connecting surfaces of the plurality of optical semiconductor elements; removing the light reflecting layer attaching to the light emitting surfaces of the plurality of optical semiconductor elements; and cutting the light reflecting layer between the optical semiconductor elements that are next to each other.
    Type: Grant
    Filed: March 10, 2016
    Date of Patent: September 24, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Yasunari Ooyabu, Hiroki Kono, Yi-min Chou
  • Patent number: 10418524
    Abstract: An optoelectronic device comprises a substrate; a groove on the substrate; a plurality of semiconductor units on the substrate and separated by the groove, wherein each semiconductor unit comprises a first semiconductor layer, a second semiconductor layer, and an active region interposed between the first semiconductor layer and the second semiconductor layer; a connecting part crossing the groove for connecting two of the plurality of semiconductor units, wherein the connecting part comprises one end on the first semiconductor layer and another end on the second semiconductor layer; a first electrode comprising a plurality of first extensions jointly connected to the one end of the connecting part; and a second electrode comprising a plurality of second extensions jointly connected to the another end of the connecting part, wherein an amount of the plurality of first extensions is different from an amount of the plurality of second extensions.
    Type: Grant
    Filed: April 12, 2018
    Date of Patent: September 17, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Chang-Huei Jing, Chien-Fu Shen
  • Patent number: 10418412
    Abstract: A semiconductor device, comprises a semiconductor stack comprising a first area and a second area, wherein the second area comprises a first side wall, a first isolation path formed between the first area and the second area, a second isolation path formed in the semiconductor stack, an isolation layer formed in the first isolation path and covering the first side wall, an electrical contact layer formed under the semiconductor stack, and an electrode contact layer directly contacting the electrical contact layer.
    Type: Grant
    Filed: July 23, 2018
    Date of Patent: September 17, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Tsung-Hsien Yang, Han-Min Wu, Jhih-Sian Wang, Yi-Ming Chen, Tzu-Ghieh Hsu
  • Patent number: 10418513
    Abstract: A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface includes a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein the first crack surface is inclined to the first deteriorated surface or the second deteriorated surface; and wherein the second crack surface or the third crack surface is substantially perpendicular to the top surface or the bottom surface.
    Type: Grant
    Filed: September 27, 2018
    Date of Patent: September 17, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Chia Chen Tsai, Chen Ou, Chi Ling Lee, Chi Shiang Hsu
  • Patent number: 10411177
    Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.
    Type: Grant
    Filed: June 26, 2018
    Date of Patent: September 10, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: De-Shan Kuo, Ting-Chia Ko, Chun-Hsiang Tu, Po-Shun Chiu
  • Patent number: 10411162
    Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer; a plurality of first trenches penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer; a second trench penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer, wherein the second trench is disposed near an outmost edge of the active layer, and surrounds the active layer and the plurality of first trenches; a patterned metal layer formed on the second semiconductor layer and formed in one of the plurality of first trenches or the second trench; and a first pad portion and a second pad portion both formed on the second semiconductor layer and electrically connecting the second semiconductor layer and the first semiconductor layer respectively.
    Type: Grant
    Filed: September 14, 2016
    Date of Patent: September 10, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Chao-Hsing Chen, Jia-Kuen Wang, Tzu-Yao Tseng, Tsung-Hsun Chiang, Bo-Jiun Hu, Wen-Hung Chuang, Yu-Ling Lin
  • Patent number: 10412801
    Abstract: A light-emitting device includes a current source module having a first transistor, a first voltage control module providing a negative voltage and a second voltage control module having a second transistor. The second voltage control module is electrically connected to the current source module and the first voltage control module.
    Type: Grant
    Filed: August 23, 2018
    Date of Patent: September 10, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Chao-Kai Chang, Yi-Chao Lin, Chang-Hseih Wu, Jia-Tay Kuo
  • Patent number: 10403804
    Abstract: LED chip packaging assembly that facilitates an integrated method for mounting LED chips as a group to be pre-wired to be electrically connected to each other through a pattern of extendable metal wiring lines is provided. LED chips which are electrically connected to each other through extendable metal wiring lines, replace pick and place mounting and the wire bonding processes of the LED chips, respectively. Wafer level MEMS technology is utilized to form parallel wiring lines suspended and connected to various contact pads. Bonding wires connecting the LED chips are made into horizontally arranged extendable metal wiring lines which can be in a spring shape, and allowing for expanding and contracting of the distance between the connected LED chips. A tape is further provided to be bonded to the LED chips, and extended in size to enlarge distance between the LED chips to exceed the one or more prearranged distances.
    Type: Grant
    Filed: June 13, 2018
    Date of Patent: September 3, 2019
    Assignees: EPISTAR CORPORATION, IMEC TAIWAN CO.
    Inventors: Guan Ru He, Jui-Hung Yeh, Kevin T. Y. Huang, Chih Chung Chen
  • Patent number: 10403789
    Abstract: This disclosure discloses a light-emitting element having a light-emitting unit, a transparent layer and a wavelength conversion layer formed on the transparent layer. The transparent layer covers the light-emitting unit. The wavelength conversion layer includes a phosphor layer having a phosphor and a stress release layer without the phosphor.
    Type: Grant
    Filed: February 3, 2017
    Date of Patent: September 3, 2019
    Assignee: Epistar Corporation
    Inventors: Ching-Tai Cheng, Ju-lien Kuo, Min-Hsun Hsieh, Shau-Yi Chen, Shih-An Liao, Jhih-Hao Chen
  • Patent number: 10403794
    Abstract: The semiconductor device includes a first conductivity-type semiconductor structure comprising a first stack and a second stack, wherein the first stack comprises alternate first layers and second layers, the second stack comprises alternate third layers and fourth layers. The semiconductor device includes a second conductivity-type semiconductor structure on the first conductivity-type semiconductor and includes an active structure between the first conductivity-type semiconductor structure and the second conductivity-type semiconductor structure. The first stack is between the active structure and the second stack, and a first difference between a maximum of the first doping concentration of one of the first layers and a minimum of the second doping concentration of one of the second layers is less than a second difference between a maximum of the third doping concentration of one of the third layers and a minimum of the fourth doping concentration of one of the fourth layers.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: September 3, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Yu-Shou Wang, Dian-Ying Hu
  • Patent number: 10396058
    Abstract: A light-emitting device configured to electrically connect to an external circuit and having: a first light-emitting structure; a second light-emitting structure; a first conductive structure having a first connecting pad having a side surface and a top surface connected to the first light-emitting structure and an exposed bottom surface, and a first connecting portion extending away from the side surface without being directly connected to the second light-emitting structure; and a second conductive structure electrically connecting the first light-emitting structure and second light-emitting structure.
    Type: Grant
    Filed: February 27, 2017
    Date of Patent: August 27, 2019
    Assignee: EPISTAR CORPORATION
    Inventor: Min-Hsun Hsieh
  • Patent number: 10396193
    Abstract: An III-nitride HEMT, including a substrate; a semiconductor epitaxial stack, formed on the substrate, including a buffer structure, a channel layer formed on the buffer structure and a barrier layer formed on the channel layer, wherein a two-dimensional electron gas is formed between the channel layer and the barrier layer; and a first electrode, a third electrode and a second electrode located in between, respectively formed on the barrier layer, wherein the semiconductor epitaxial stack includes a sheet resistance greater than 500 ?/sq, wherein there is a first minimum space between the first electrode and the second electrode, a second minimum space between the second electrode and the third electrode, and the ratio of the first minimum space to the sum of first minimum space and the second minimum space is between 0.77 and 1, wherein the second electrode includes a length greater than or equal to 9 ?m.
    Type: Grant
    Filed: August 8, 2018
    Date of Patent: August 27, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Chien-Kai Tung, Tien Ching Feng
  • Patent number: 10396191
    Abstract: A semiconductor device, including: a channel layer formed on a substrate; a top barrier layer formed on the channel layer, wherein a first heterojunction is formed between the channel layer and the top barrier layer so that a first two-dimensional electron gas is generated in the channel layer; a buffer structure formed between the substrate and the channel layer; a back barrier layer formed between the buffer structure and the channel layer, wherein a second heterojunction is formed between the buffer structure and the back barrier layer so that a second two-dimensional electron gas is generated in the buffer structure; and a source electrode, a drain electrode, and a gate electrode formed on the top barrier layer, respectively; wherein a sheet carrier density of the second two-dimensional electron gas is less than 8E+10 cm?2.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: August 27, 2019
    Assignee: Epistar Corporation
    Inventors: Ya-Yu Yang, Chia-Cheng Lui, Shang-Ju Tu
  • Patent number: 10396243
    Abstract: A light-emitting device includes: a rectangular shape with a first side, a second side opposite to the first side, and a third side connecting the first side and the second side; a light-emitting stack, comprising a lower semiconductor layer, an upper semiconductor layer, and an active layer between the lower semiconductor layer and the upper semiconductor layer; a first electrode formed on the lower semiconductor layer, comprising a first electrode pad and a first extension electrode; a second electrode formed on the upper semiconductor layer, comprising a second electrode pad and a second extension electrode; and a first current blocking layer formed between the lower semiconductor layer and the first electrode pad, wherein the first current blocking layer comprises a top surface and side surfaces; wherein the first electrode pad covers the top surface and the side surfaces of the first current blocking layer and contacts the lower semiconductor layer.
    Type: Grant
    Filed: July 9, 2018
    Date of Patent: August 27, 2019
    Assignee: Epistar Corporation
    Inventors: Chien-Kai Chung, Po-Shun Chiu, Hsin-Ying Wang, De-Shan Kuo, Tsun-Kai Ko, Yu-Ting Huang
  • Patent number: 10396246
    Abstract: An optoelectronic device includes a semiconductor stack, including a first semiconductor layer, an active layer formed on the first semiconductor layer, and a second semiconductor layer; a first metal layer formed on a top surface of the second semiconductor layer; a second metal layer formed on a top surface of the first semiconductor layer; an insulative layer formed on the top surface of the first semiconductor layer and the top surface of the second semiconductor layer; wherein a space between a sidewall of the first metal layer and a sidewall of the semiconductor stack is less than 3 ?m.
    Type: Grant
    Filed: February 20, 2017
    Date of Patent: August 27, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Jia-Kuen Wang, Chao-Hsing Chen
  • Patent number: 10386026
    Abstract: The present disclosure discloses a light fixture, which includes a junction box, a first lid over the junction box, a first lid body hinged on the junction box, a second lid, a second lid body located between the second lid and junction box, and a space located between the junction box and the second lid body.
    Type: Grant
    Filed: June 7, 2018
    Date of Patent: August 20, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Frederic Perry Phillips, Wei-Chiang Hu
  • Patent number: 10381512
    Abstract: The present disclosure provides a light-emitting device. The light-emitting device includes a substrate, a light-emitting stack on the substrate, and a semiconductor window layer comprising AlGaInP series material disposed between the substrate and the light-emitting stack.
    Type: Grant
    Filed: December 8, 2017
    Date of Patent: August 13, 2019
    Assignee: Epistar Corporation
    Inventor: Yi-Chieh Lin
  • Patent number: 10381536
    Abstract: A light-emitting device includes a light-emitting element, a light pervious layer, an electrode defining layer, a first soldering pad and a second soldering pad. The light-emitting element has an upper surface, a bottom surface, and a lateral surface arranged between the upper surface and the bottom surface. The light pervious layer covers the upper surface and the lateral surface. The electrode defining layer covers a part of the light pervious layer. The first soldering pad and the second soldering pad are surrounded by the electrode defining layer. A gap is located between the first soldering pad and the second soldering pad while the gap remains substantially constant.
    Type: Grant
    Filed: September 8, 2017
    Date of Patent: August 13, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Ching-Tai Cheng, Lung-Kuan Lai, Yih-Hua Renn, Min-Hsun Hsieh
  • Patent number: D860480
    Type: Grant
    Filed: January 5, 2017
    Date of Patent: September 17, 2019
    Assignee: Epistar Corporation
    Inventors: Chien-Liang Liu, Chun-Hung Liu, Ming-Chi Hsu