Patents Assigned to Epitactix PTY LTD
  • Heterjunction bipolar transistor with tunnelling mis emitter junction
    Publication number: 20060284282
    Abstract: A manufacturing method and structure for a MIS Heterojunction Bipolar Transistor (HBT) is provided including a GaAs substrate which has a collector region; a base layer coupled to the collector region; the ultra-thin insulating layer including a rare earth oxide coupled to the base layer; and an emitter structure including metal layers coupled to the ultra-thin insulating layer.
    Type: Application
    Filed: September 2, 2004
    Publication date: December 21, 2006
    Applicant: EpiTactix Pty Ltd
    Inventor: Shaun Cunningham
  • Method and resulting structure for manufacturing semiconductor substrates
    Patent number: 6919261
    Abstract: A semiconductor wafer composite is used as a basis for fabricating semiconductor chips, especially compound semiconductor devices. The semiconductor wafer composite advantageously comprises a metallic substrate 210 and multiple semiconductor tiles 220 bonded to the surface of the metallic substrate 210. The semiconductor wafer composite is effectively used as a single large semiconductor wafer for volume fabrication, and can be used to fabricate semiconductor devices in a similar manner.
    Type: Grant
    Filed: March 13, 2003
    Date of Patent: July 19, 2005
    Assignee: Epitactix PTY LTD
    Inventor: Shaun Joseph Cunningham