Patents Assigned to Epitaxx, Inc.
  • Low leakage current photodetector arrays
    Patent number: 5387796
    Abstract: Leakage current in InGaAs/InAsP/InP lattice mismatched photodetectors can be reduced by providing graded InAsP compositions having abrupt interfaces between successive layers that maintain a lattice mismatch between the layers of 0.13% or less; doping the absorption layer with high levels of sulfur and by thermal cycling of the wafers. High yields of low leakage current photodetector arrays are obtained.
    Type: Grant
    Filed: May 26, 1993
    Date of Patent: February 7, 1995
    Assignee: Epitaxx, Inc.
    Inventors: Abhay M. Joshi, Krishna R. Linga