Patents Assigned to Epitech Corporation
-
Publication number: 20060017372Abstract: A lighting device and a method for manufacturing the same are described. First, a semiconductor layer of a first electrical property, an active layer and a semiconductor layer of a second electrical property are sequentially formed, and part of them are removed to form a mesa. A transparent contact layer is formed thereon, and thus forms a stack. Afterwards, a passivation layer is deposited on the stack and a first part of the semiconductor layer of the first electrical property adjacent to the stack. Part of the passivation layer is removed to expose part of the transparent contact layer. Then, an electrode of the second electrical property is formed on the exposed transparent contact layer. Afterwards, the electrode of the second electrical property is extended to the passivation layer on the first part of the semiconductor layer of the first electrical property to form a guard ring.Type: ApplicationFiled: April 14, 2005Publication date: January 26, 2006Applicant: EPITECH CORPORATION, LTD.Inventors: Chang-Hsin Chu, Kuo-Hui Yu, Shi-Ming Chen
-
Patent number: 6858866Abstract: The present invention, a III-nitride light emitting diode (LED) and a manufacture method thereof, forms a magnetic metal layer in a conventional III-nitride LED by the method of thermal evaporation, e-beam evaporation, ion sputtering, or electroplate. Due to the eddy current effect, heat is generated by using electromagnetic oven inducing with electromagnetic wave to activate the p-type semiconductor material in III-nitride LED. The present invention has advantages of providing the equipments of simple structure and low cost. The contact resistance between the semiconductors and electrodes is reduced while the III-nitride compound semiconductor material is activated.Type: GrantFiled: February 4, 2002Date of Patent: February 22, 2005Assignees: Epitech Corporation, Ltd.Inventor: Shi-Ming Chen
-
Patent number: 6847046Abstract: A light-emitting device and a method for manufacturing the same are described, by forming a SiN/Al1-x-yInxGayN(0?x?1, 0?y?1, x+y?1) superlattice layer between a substrate and an undoped GaN as a buffer layer, so as to reduce dislocation density of the buffer layer. In the SiN/Al1-x-yInxGayN(0?x?1, 0?y?1, x+y?1) superlattice layer, Al1-x-yInxGayN(0?x?1, 0?y?1, x+y?1) can be n-type, p-type or undoped.Type: GrantFiled: December 31, 2003Date of Patent: January 25, 2005Assignees: Epitech Corporation, Ltd.Inventors: Shih-Chen Wei, Yung-Hsin Shie, Wen-Liang Li, Shi-Ming Chen
-
Patent number: 6781147Abstract: A lateral current blocking light emitting diode (LED) and a method of making the same are disclosed. The present invention features in that a trench is formed between the two electrodes via the technique of such as etching, wherein the depth of the trench reaches to at least the active layer, thereby blocking the lateral current between the two electrodes. With the use of the present invention, the possibility of the current passing through the active layer can be increased, thereby improving the brightness of the LED; and the chance of the photons emitted from the lateral of the trench can be raised wherein the photons are generated from the active layer, thereby increasing the output efficiency of the photons generated from the active layer.Type: GrantFiled: January 10, 2003Date of Patent: August 24, 2004Assignee: Epitech Corporation, Ltd.Inventors: Shi-Ming Chen, Chun-Liang Lin, Wen-Bin Chen, Yan-Kuin Su
-
Publication number: 20040144986Abstract: A light emitting diode (LED) having an anti-reflection layer and a method of making the same are disclosed. The present invention is featured in forming an anti-reflection layer on a window layer of the LED, thereby reducing the chance of the photons generated by the LED to be totally reflected at the interface between the window layer and air. The process used for forming the anti-reflection layer can be such as plasma enhanced chemical vapor deposition (PECVD), sputtering, thermal evaporation or electron-beam evaporation, etc. Furthermore, the refractive index of the aforementioned anti-reflection layer is between 3 and 1.5, and the material forming the anti-reflection layer can be such as Si3N4 or ZnSe, etc.Type: ApplicationFiled: May 13, 2003Publication date: July 29, 2004Applicant: EPITECH CORPORATION, LTD.Inventors: Shi-Ming Chen, Wen-Liang Li
-
Publication number: 20040140473Abstract: A light emitting diode (LED) having distributed electrodes is disclosed.Type: ApplicationFiled: May 12, 2003Publication date: July 22, 2004Applicants: EPITECH CORPORATION, LTD., Shi-Ming CHENInventor: Shi-Ming Chen
-
Publication number: 20040129944Abstract: A color mixing light emitting diode (LED) is disclosed. The present invention is featured in that a plurality of LEDs emitting different colors of light can be electrically connected in series and/or in parallel by using chip manufacturing to generate other colors of light. For example, the first LED chip set can emit such as yellow light (or changing to reddish-red light), and the second LED chip can emit such as blue light (or changing to bluish-green light), thereby making the present invention to emit white light. Moreover, the first LED chip set can be a photoluminescence LED chip, wherein the first LED chip can be excited by the light emitted by the second LED chip to emit light, and then the light emitted by the second LED chip and the light emitted by the first LED chip can be mixed into other colors of light.Type: ApplicationFiled: April 7, 2003Publication date: July 8, 2004Applicants: EPITECH CORPORATION, LTD.Inventor: Shi-Ming Chen
-
Publication number: 20030127644Abstract: The present invention, a III-nitride light emitting diode (LED) and a manufacture method thereof, forms a magnetic metal layer in a conventional III-nitride LED by the method of thermal evaporation, e-beam evaporation, ion sputtering, or electroplate. Due to the eddy current effect, heat is generated by using electromagnetic oven inducing with electromagnetic wave to activate the p-type semiconductor material in III-nitride LED. The present invention has advantages of providing the equipments of simple structure and low cost. The contact resistance between the semiconductors and electrodes is reduced while the III-nitride compound semiconductor material is activated.Type: ApplicationFiled: February 4, 2002Publication date: July 10, 2003Applicant: EPITECH CORPORATION, LTD.Inventor: Shi-Ming Chen
-
Patent number: 6522063Abstract: A light emitting diode. The light emitting diode has a substrate that has two surfaces. On one surface, a distributed Bragg reflector, an n-type confining layer, an active layer, a p-type confining layer, a current spreading layer, a meshed Ohmic contact layer, a transparent conductive oxide layer and a front side electrode are formed. The other surface has a rear side electrode formed thereon. Via the meshed structure, the absorbing area of the Ohmic contact layer is reduced to avoid the light emitting from the active layer being greatly absorbed by the Ohmic contact layer. In contrast, the light intensity of the light emitting diode is increased.Type: GrantFiled: March 28, 2001Date of Patent: February 18, 2003Assignee: Epitech CorporationInventors: Shi Ming Chen, Wen Liang Li, Henrg Chen, Hsin Chuan Wang
-
Patent number: 6518598Abstract: A structure of III-nitride light emitting diode (LED) having spiral electrodes and a manufacturing method thereof. The present invention uses an etching or polishing method to form a spiral-shaped trench in the surface of the epitaxial structure of LED, so that two metal electrodes having opposite electrical properties, formed in following steps, have the spiral-shaped pattern structures in parallel. The structure of III-nitride LED having spiral electrodes formed by the method of the present invention can evenly distribute the injected current between two electrodes having opposite electrical properties, thereby having the advantages of good current-spreading efficiency and the uniform light-emitting area. In addition, the photon ejected to the surface of diode produced with a large angle can be extracted from the side of the trench that is exposed by etching spiral-shaped pattern, so that the extraction efficiency of photon is increased.Type: GrantFiled: January 23, 2002Date of Patent: February 11, 2003Assignees: Epitech Corporation LTDInventor: Shi-Ming Chen
-
Patent number: 6486500Abstract: A structure and manufacturing method of LED is disclosed.Type: GrantFiled: January 28, 2002Date of Patent: November 26, 2002Assignee: Epitech Corporation, Ltd.Inventor: Shi-Ming Chen