Abstract: The present invention relates to a III-nitride compound semiconductor light emitting device comprising an active layer with the multi-quantum wells interposed between an n-InxAlyGazN(x+y+z=1, 0<x<1, 0<y<1, 0<z?1) layer and a p-InxAlyGazN(x+y+z=1, 0<x<1, 0<y<1, 0<z<1) layer, wherein the active layer comprises an alternate stacking of a quantum-well layer made of InxGa1-xN(0.05<x<1) and a sandwich barrier layer, the sandwich barrier layer comprising a first outer barrier layer of InaGa1-aN(0<a<0.05), a middle barrier layer of AlyGa1-yN(0<y<1) formed on the first outer barrier layer and a second outer barrier layer of InbGa1-bN(0<b<0.05) formed on the middle barrier layer, thereby a high-efficiency/high-output light emitting device with high-current and high-temperature properties can be obtained, and it is possible to easily achieve a high-efficiency green light emission at a wavelength equal to or over 500 nm, and high-efficiency near UV light emission.

Abstract: The present invention relates to a method for forming a GaN-based nitride layer comprising a first step of forming a first layer comprising SiaCbNc (c,fc>0, a?0) on a sapphire substrate and a second step for forming a nitride layer comprising a GaN component on the first layer comprising SiaCbNc (c,b>0, a?0).

Abstract: The present invention relates to an III-nitride semiconductor light emitting device in which a single layer or plural layers made of SixCyNz(x?0, y?0, x+y>0, z>0) are inserted into or under an active layer and it is directed to a technology in which Al(x)Ga(y)In(1?x?y)N(0?x?1, 0?y?1, 0?x+y?1) of the hexagonal structure and SixCyNz(x?0, y?0, x+y>0, z>0) of the hexagonal structure are combined together in view of the properties of the SixCyNz(x?0, y?0, x+y>0, z>0) material.

Abstract: The present invention is to provide a group III nitride tunneling junction structure with a low tunneling potential barrier, in which Si layer or a group III-V compound semiconductor In(a)Ga(b)Al(c)As(d)[N]P(e) (0?a?1, 0?b?1, 0?c?1, 0?d?1, 0?e?1) which has a smaller band gap than that of Al(x)Ga(y)In(z)N (0?x?1, 0?y?1, 0?z?1) and can be doped with a high concentration of p is inserted into a tunneling junction based on a P++-Al(x)Ga(y)In(z)N (0?x?1, 0?y?1, 0?z?1) layer and a N++-Al(x)Ga(y)In(z)N (0?x?1, 0?y?1, 0?z?1) layer. This tunneling junction structure will be useful for the fabrication of a highly reliable ultrahigh-speed optoelectronic device.

Abstract: The present invention provides a semiconductor device with InxGa1-xN crystal passivation layer and manufacturing method thereof which effectively blocks the leakage current between the surface & boundary of a device and a pn-junction boundary, and enhances the light emission efficiency as forming new structural semiconductor devices by removing the conventional dielectric passivation layer and using InxGa1-xN crystal layer instead. A semiconductor device with gallium nitride type crystal passivation layer, wherein said semiconductor device has a p-n junction diode construction and forms a InxGa1-xN crystal passivation layer with a specified thickness and a width around the edge of the upper surface of p-GaN layer which is the top layer of the semiconductor device.

Abstract: A semiconductor LED device in which a reverse p-n junction diode protective element is integrated with a single p-n junction AlGaInN semiconductor LED element having a conventional structure, so that the semiconductor LED device exhibits high resistance to reverse voltage. In accordance with the function of the reverse p-n junction diode protective element, the p-n junction LED element can be securely protected from external static electricity and momentary reverse overvoltage applied thereto. In particular, it is possible to basically eliminate causes of a p-n junction breakage occurring in an LED element due to application of a reverse voltage frequently occurring during a process of the LED element, thereby greatly improving the reliability and yield of the LED element.

Abstract: The present invention relates to a semiconductor LED device comprising a pumping layer with high light emitting efficiency and an active layer with smaller bandgap converting the absorbed light into any kinds of light of wavelength as required, which generates light from the AlGaInN pumping layer containing less In, projects the rays of light on the active layer containing more In, lets the required light of wavelength emit and decreases the blue shift caused by electric current, thereby increasing the light emitting efficiency and emitting lights with more than two wavelengths from one Led device. This invention enables to obtain various light of wavelength from one device and form the element through only one epitaxy process, thereby increasing reproductivity, yield, and efficiency by not using the fluorescent materials lowering the efficiency when forming white light.