Abstract: Manufacture of multi-junction solar cells, and devices thereof, are disclosed. The architectures are also adapted to provide for a more uniform and consistent fabrication of the solar cell structures, leading to improved yields, greater efficiency, and lower costs. Certain solar cells may be from a different manufacturing process and further include one or more compositional gradients of one or more semiconductor elements in one or more semiconductor layers, resulting in a more optimal solar cell device. A multi-junction cell may include a back surface field layer, a tunneling junction layer, a first active cell, and a second active cell.

Abstract: Manufacture of multi junction solar cells, and devices thereof, are disclosed. The architectures are also adapted to provide for a more uniform and consistent fabrication of the solar cell structures, leading to improved yields, greater efficiency, and lower costs. Certain solar cells may be from a different manufacturing processes and further include one or more compositional gradients of one or more semiconductor elements in one or more semiconductor layers, resulting in a more optimal solar cell device.

Abstract: Manufacture of multi-junction solar cells, and devices thereof, are disclosed. The architectures are also adapted to provide for a more uniform and consistent fabrication of the solar cell structures, leading to improved yields and lower costs. Certain solar cells may further include one or more compositional gradients of one or more semiconductor elements in one or more semiconductor layers, resulting in a more optimal solar cell device.

Abstract: A heterojunction bipolar transistor (HBT), having a substrate formed of indium phosphide (InP), and having emitter, base and collector layers formed over the substrate such that the base layer is disposed between the emitter and collector layers. The collector layer formed from InGaAs, and the collector layer being doped n-type. The emitter layer formed from InP, and the emitter layer being doped n-type. The base layer formed of indium gallium arsenide (InGaAs) and grown by MOCVD, the base layer being tensile strained and graded, and the base layer being doped p-type with carbon. A lattice mismatch, for at least a portion of the base layer, between the substrate and the base material is greater than 0.2%.