Patents Assigned to EPLIDA MEMORY, INC.
  • Publication number: 20120161227
    Abstract: A semiconductor device may include, but is not limited to, a semiconductor substrate, a word line, and an isolation region. The semiconductor substrate has an active region and first and second grooves. Each of the first and second grooves extends across the active region. The first groove is wider in width than the second groove. The word line is disposed in the first groove. The isolation region is disposed in the second groove. The isolation region is narrower in width than the word line.
    Type: Application
    Filed: December 20, 2011
    Publication date: June 28, 2012
    Applicant: Eplida Memory, Inc.
    Inventor: Kiyonori OYU
  • Publication number: 20060239097
    Abstract: Disclosed is a semiconductor storage apparatus in which two sorts of memories, that is, a volatile memory and a non-volatile memory, are mounted on one chip. Data of a DRAM memory array are saved in a corresponding area of a non-volatile memory before entry to a data retention mode or before power down and data is transferred from the area of the non-volatile memory to the DRAM memory array in exiting from the data retention mode or power up. Normal read/write access is made to the DRAM memory array, while data retention is in an area of the non-volatile memory.
    Type: Application
    Filed: April 24, 2006
    Publication date: October 26, 2006
    Applicant: EPLIDA MEMORY, INC.
    Inventors: Kiyoshi Nakai, Kazuhiko Kajigaya, Isamu Asano