Abstract: A chemical mechanical polishing slurry for polishing a copper layer without excessively or destructively polishing a barrier layer beneath the copper layer is disclosed and includes an acid, a surfactant, and a silica sol having silica polishing particles that are surface modified with a surface charge modifier and that have potassium ions attached thereto. A method for preparing the chemical mechanical polishing slurry and a chemical mechanical polishing method using the chemical mechanical polishing slurry are also disclosed.

Abstract: The invention relates to an aqueous cleaning composition for use in a cleaning process during or after a chemical mechanical planarization for a copper integrated circuit processing, comprising 0.05 to 20 wt % of a nitrogen-containing heterocyclic organic base, 0.05 to 50 wt % of an alcohol amine, 0.01-10 wt % of a quaternary ammonium hydroxide, and water. When used during or after the planarization process, the inventive cleaning composition of the invention can effectively remove residual contaminants from the surfaces of the wafers and simultaneously maintain a good surface roughness of the wafers.

Abstract: The invention relates to an aqueous cleaning composition for wafers with copper wires that have been treated by chemical mechanical planarization in an integrated circuit processing, comprising 0.1 to 15 wt % of a nitrogen-containing heterocyclic organic base, 0.1 to 35 wt % of an alcohol amine and water. Upon contact with copper-containing semiconductor wafers that have been treated by chemical mechanical planarization for an effective period of time, the aqueous cleaning composition can effectively remove residual contaminants from the surfaces of the wafers, and simultaneously provide the copper-containing semiconductor wafers with a better surface roughness.

Abstract: A chemical mechanical polishing composition includes: an abrasive component, a corrosion inhibitor, a surfactant, a diacid compound, a metal residue inhibitor, and water. The metal residue inhibitor is selected from the group of compounds having the following formulas: and combinations thereof, wherein R1, R2, R3, and R4 are independently selected from H, C1-C6 alkyl, C2-C6 alkenyl, and C2-C6 alkylidyne; and R5, R6, R7, R8, R9, and R10 are independently selected from H and C1-C6 alkyl.

Abstract: The invention relates to an aqueous cleaning composition for use in a cleaning process during or after a chemical mechanical planarization for a copper integrated circuit processing, comprising 0.05 to 20 wt % of a nitrogen-containing heterocyclic organic base, 0.05 to 50 wt % of an alcohol amine, 0.01-10 wt % of a quaternary ammonium hydroxide, and water. When used during or after the planarization process, the inventive cleaning composition of the invention can effectively remove residual contaminants from the surfaces of the wafers and simultaneously maintain a good surface roughness of the wafers.

Abstract: A chemical mechanical polishing composition includes: an abrasive component, a corrosion inhibitor, a surfactant, a diacid compound, a metal residue inhibitor, and water. The metal residue inhibitor is selected from the group of compounds having the following formulas: and combinations thereof, wherein R1, R2, R3, and R4 are independently selected from H, C1-C6 alkyl, C2-C6 alkenyl, and C2-C6 alkylidyne; and R5, R6, R7, R8, R9, and R10 are independently selected from H and C1-C6 alkyl.