Patents Assigned to Epoch Material Co., Ltd.
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Patent number: 8557006Abstract: A chemical mechanical polishing slurry for polishing a copper layer without excessively or destructively polishing a barrier layer beneath the copper layer is disclosed and includes an acid, a surfactant, and a silica sol having silica polishing particles that are surface modified with a surface charge modifier and that have potassium ions attached thereto. A method for preparing the chemical mechanical polishing slurry and a chemical mechanical polishing method using the chemical mechanical polishing slurry are also disclosed.Type: GrantFiled: April 26, 2012Date of Patent: October 15, 2013Assignee: Epoch Material Co., Ltd.Inventors: Hui-Fang Hou, Wen-Cheng Liu, Yen-Liang Chen, Jui-Ching Chen
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Patent number: 8067352Abstract: The invention relates to an aqueous cleaning composition for use in a cleaning process during or after a chemical mechanical planarization for a copper integrated circuit processing, comprising 0.05 to 20 wt % of a nitrogen-containing heterocyclic organic base, 0.05 to 50 wt % of an alcohol amine, 0.01-10 wt % of a quaternary ammonium hydroxide, and water. When used during or after the planarization process, the inventive cleaning composition of the invention can effectively remove residual contaminants from the surfaces of the wafers and simultaneously maintain a good surface roughness of the wafers.Type: GrantFiled: March 14, 2008Date of Patent: November 29, 2011Assignee: Epoch Material Co., Ltd.Inventors: Chien Ching Chen, Wen Cheng Liu, Tsung Hsien Chuang, Jui Ching Chen
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Patent number: 8063006Abstract: The invention relates to an aqueous cleaning composition for wafers with copper wires that have been treated by chemical mechanical planarization in an integrated circuit processing, comprising 0.1 to 15 wt % of a nitrogen-containing heterocyclic organic base, 0.1 to 35 wt % of an alcohol amine and water. Upon contact with copper-containing semiconductor wafers that have been treated by chemical mechanical planarization for an effective period of time, the aqueous cleaning composition can effectively remove residual contaminants from the surfaces of the wafers, and simultaneously provide the copper-containing semiconductor wafers with a better surface roughness.Type: GrantFiled: May 18, 2006Date of Patent: November 22, 2011Assignee: Epoch Material Co., Ltd.Inventors: Chien Ching Chen, Wen Cheng Liu, Jing-Chiuan Shiue, Teng Yan Huo
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Publication number: 20090170742Abstract: An aqueous cleaning composition for cleaning wafer contaminants after a chemical mechanical planarization process, includes: 0.1-20 wt % of an alkanolamine selected from the group consisting of 2-amino-1,3-propanediol, 2-amino-2-(hydroxymethyl)-1,3-propanediol, and combinations thereof; 0.05-20 wt % of a quaternary amine; and water. The cleaning composition is capable of removing efficiently residual contaminants from a polished surface of a wafer and imparting the wafer with a better surface roughness.Type: ApplicationFiled: August 19, 2008Publication date: July 2, 2009Applicant: EPOCH MATERIAL CO., LTD.Inventors: Tsung-Hsien Chuang, Chien-Ching Chen, Wen-Cheng Liu
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Patent number: 7550092Abstract: A chemical mechanical polishing composition includes: an abrasive component, a corrosion inhibitor, a surfactant, a diacid compound, a metal residue inhibitor, and water. The metal residue inhibitor is selected from the group of compounds having the following formulas: and combinations thereof, wherein R1, R2, R3, and R4 are independently selected from H, C1-C6 alkyl, C2-C6 alkenyl, and C2-C6 alkylidyne; and R5, R6, R7, R8, R9, and R10 are independently selected from H and C1-C6 alkyl.Type: GrantFiled: June 19, 2006Date of Patent: June 23, 2009Assignee: Epoch Material Co., Ltd.Inventors: Hui-Fang Hou, Wen-Cheng Liu, Pao-Cheng Chen, Yen-Liang Chen, Jui-Ching Chen
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Publication number: 20090036343Abstract: The invention relates to an aqueous cleaning composition for use in a cleaning process during or after a chemical mechanical planarization for a copper integrated circuit processing, comprising 0.05 to 20 wt % of a nitrogen-containing heterocyclic organic base, 0.05 to 50 wt % of an alcohol amine, 0.01-10 wt % of a quaternary ammonium hydroxide, and water. When used during or after the planarization process, the inventive cleaning composition of the invention can effectively remove residual contaminants from the surfaces of the wafers and simultaneously maintain a good surface roughness of the wafers.Type: ApplicationFiled: March 14, 2008Publication date: February 5, 2009Applicant: Epoch Material Co., Ltd.Inventors: Chien Ching Chen, Wen Cheng Liu, Tsung Hsien Chuang, Jui Ching Chen
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Publication number: 20080096470Abstract: A chemical mechanical polishing slurry for polishing a copper layer without excessively or destructively polishing a barrier layer beneath the copper layer is disclosed and includes an acid, a surfactant, and a silica sol having silica polishing particles that are surface modified with a surface charge modifier and that have potassium ions attached thereto. A method for preparing the chemical mechanical polishing slurry and a chemical mechanical polishing method using the chemical mechanical polishing slurry are also disclosed.Type: ApplicationFiled: August 27, 2007Publication date: April 24, 2008Applicant: EPOCH MATERIAL CO., LTD.Inventors: Hui-Fang Hou, Wen-Cheng Liu, Yen-Liang Chen, Jui-Ching Chen
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Publication number: 20070290165Abstract: A chemical mechanical polishing composition includes: an abrasive component, a corrosion inhibitor, a surfactant, a diacid compound, a metal residue inhibitor, and water. The metal residue inhibitor is selected from the group of compounds having the following formulas: and combinations thereof, wherein R1, R2, R3, and R4 are independently selected from H, C1-C6 alkyl, C2-C6 alkenyl, and C2-C6 alkylidyne; and R5, R6, R7, R8, R9, and R10 are independently selected from H and C1-C6 alkyl.Type: ApplicationFiled: June 19, 2006Publication date: December 20, 2007Applicant: Epoch Material Co., Ltd.Inventors: Hui-Fang Hou, Wen-Cheng Liu, Pao-Cheng Chen, Yen-Liang Chen, Jui-Ching Chen