Abstract: A data backup method, a data recovery method and a storage controller for a rewritable non-volatile memory module are provided. The data backup method includes receiving a trim command; generating a trim information list according to the trim command and a physical address that stores the trim information list, wherein the trim information list records information corresponding to the trim command and the physical address; storing the generated trim information list into the physical address. The data recovery method includes re-establishing a logical-to-physical table; loading a latest trim information list into a memory from the rewritable non-volatile memory module; updating the re-established logical-to-physical table or the trim information list in the memory according to the trim information.

Abstract: A data backup method and a data recovery method are provided. The data backup method includes: updating a main information table and a sub information table and generating physical unit information according to an erase count and a physical unit status of a physical unit; writing the physical unit information into the physical unit before writing data into the empty physical unit; writing the main information table and the sub information table into a rewritable non-volatile memory module according to corresponding conditions. The data recovery method includes: writing a latest main information table stored in a rewritable non-volatile memory module into a memory; updating the main information table in the memory according to a sub information table which is newer than the main information table; and updating the main information table in the memory according to physical unit information which is newer than the sub information table.

Abstract: A data reading method for a rewritable non-volatile memory module is provided. The method includes receiving a reading command from a host system; identifying a target physical unit of the rewritable non-volatile memory module according to the reading command, and identifying a program erase cycle value, a first timestamp, a second timestamp of the target physical unit, wherein the first timestamp records a time at which the target physical unit is programmed last, and the second timestamp records a time at which the target physical unit is read last; and selecting a target reading voltage set among a plurality of reading voltage set according to the program erase cycle value, the first timestamp, the second timestamp, so as to read a target data from the target physical unit.

Abstract: A decoding method, a memory storage device and a memory control circuit unit are provided. The method includes: programming first data into a first physical unit of a rewritable non-volatile memory module; reading the first physical unit to obtain second data; obtaining a first threshold voltage distribution of a first bit-value and a second threshold voltage distribution of a second bit-value according to the first data and the second data, wherein the first bit-value and the second bit-value are different; calculating first channel reliability information corresponding to the first physical unit according to the first threshold voltage distribution and the second threshold voltage distribution; and decoding third data stored in the first physical unit according to the first channel reliability information. Therefore, decoding efficiency for the first physical unit is improved.

Abstract: A memory management method, a memory storage device and a memory control circuit unit are provided. The method includes: receiving first data; detecting a total number of first type physical erasing units not storing valid data; performing a first procedure if the total number is less than a first threshold value. The first procedure includes: receiving second data from a rewritable non-volatile memory module; temporarily storing the first data and the second data; dynamically determining a writing rule according to a storage status of the rewritable non-volatile memory module and storing the first data and the second data into the rewritable non-volatile memory module according to the determined writing rule. Therefore, a writing speed of the rewritable non-volatile memory module corresponding to the first data in the first procedure becomes stable.