Abstract: A novel and useful topological, scalable, and reprogrammable quantum computing machine having one or more quasi-unidimensional chord lines along which the movement of a particle is constrained. The unidimensional passage has localized energy levels that can be controlled with classic electronics. The chord line has two or more quantum dots between which a quasi-unidimensional channel is formed for the particle to travel from one qdot to the other. The tunneling path may be polysilicon, metal, thin oxide, or induced depletion region. The chord line can be in a two-dimensional space for a planar process or in a three-dimensional space with multiple layers of signal processing for a three dimensional process. A quantum structure has semiconductor dots with a layer that provides the chord line for the quantum particle evolution to occur from one dot to the other. The various layers may include polysilicon, metal, thin oxide, or induced depletion region either fully overlapped or partially overlapped.

Abstract: Novel and useful semiconductor structures using preferential tunneling through thin insulator layers. Semiconductor quantum structures are implemented using tunneling through a thin oxide layer. The quantum dots are fabricated with semiconductor wells, 3D fins or combinations thereof, while the tunneling path and any optional quantum transport path is implemented with gate layers. The oxide layer between the gate and the well is thin enough in the nanometer semiconductor processes to permit significant tunneling. Having a thin oxide layer on only one side of the well, while having thick oxide layers on all other sides, results in a preferential tunneling direction where tunneling is restricted to a small area resulting in aperture tunneling. The advantage being constraining quantum transport to a very narrow path, which can be approximated as unidimensional. In alternative embodiments, more than one preferential tunneling direction may be used. These techniques can be used in both planar and 3D (e.g.

Abstract: Novel and useful quantum structures that provide various control functions. Particles are brought into close proximity to interact with one another and exchange information. After entanglement, the particles are moved away from each other but they still carry the information contained initially. Measurement and detection are performed on the particles from the entangled ensemble to determine whether the particle is present or not in a given qdot. A quantum interaction gate is a circuit or structure operating on a relatively small number of qubits. Quantum interaction gates implement several quantum functions including a controlled NOT gate, quantum annealing gate, controlled SWAP gate, a controlled Pauli rotation gate, and ancillary gate. These quantum interaction gates can have numerous shapes including double V shape, H shape, X shape, L shape, I shape, etc.

Abstract: A novel and useful controlled quantum shift register for transporting particles from one quantum dot to another in a quantum structure. The shift register incorporates a succession of qdots with tunneling paths and control gates. Applying appropriate control signals to the control gates, a particle or a split quantum state is made to travel along the shift register. The shift register also includes ancillary double interaction where two pairs of quantum dots provide an ancillary function where the quantum state of one pair is replicated in the second pair. The shift register also provides bifurcation where an access path is split into two or more paths. Depending on the control pulse signals applied, quantum dots are extended into multiple paths. Control of the shift register is provided by electric control pulses. An optional auxiliary magnetic field provides additional control of the shift register.

Abstract: A novel and useful modified semiconductor process having staircase active well shapes that provide variable distances between pairs of locations (i.e. quantum dots) resulting in modulation of the quantum interaction strength from weak/negligible at large separations to moderate and then strong at short separations. To achieve a modulation of the distance between pairs of locations, diagonal, lateral, and vertical quantum particle/state transport is employed. As examples, both implementations of semiconductor quantum structures with tunneling through an oxide layer and with tunneling through a local well depleted region are disclosed. These techniques are applicable to both planar semiconductor processes and 3D (e.g. Fin-FET) semiconductor processes. Optical proximity correction is used to accommodate the staircase well layers. Each gate control circuit in the imposer circuitry functions to control more than one set of control gates.

Abstract: A novel and useful controlled quantum shift register for transporting particles from one quantum dot to another in a quantum structure. The shift register incorporates a succession of qdots with tunneling paths and control gates. Applying appropriate control signals to the control gates, a particle or a split quantum state is made to travel along the shift register. The shift register also includes ancillary double interaction where two pairs of quantum dots provide an ancillary function where the quantum state of one pair is replicated in the second pair. The shift register also provides bifurcation where an access path is split into two or more paths. Depending on the control pulse signals applied, quantum dots are extended into multiple paths. Control of the shift register is provided by electric control pulses. An optional auxiliary magnetic field provides additional control of the shift register.

Abstract: A novel and useful modified semiconductor process having staircase active well shapes that provide variable distances between pairs of locations (i.e. quantum dots) resulting in modulation of the quantum interaction strength from weak/negligible at large separations to moderate and then strong at short separations. To achieve a modulation of the distance between pairs of locations, diagonal, lateral, and vertical quantum particle/state transport is employed. As examples, both implementations of semiconductor quantum structures with tunneling through an oxide layer and with tunneling through a local well depleted region are disclosed. These techniques are applicable to both planar semiconductor processes and 3D (e.g. Fin-FET) semiconductor processes. Optical proximity correction is used to accommodate the staircase well layers. Each gate control circuit in the imposer circuitry functions to control more than one set of control gates.

Abstract: A novel and useful controlled quantum shift register for transporting particles from one quantum dot to another in a quantum structure. The shift register incorporates a succession of qdots with tunneling paths and control gates. Applying appropriate control signals to the control gates, a particle or a split quantum state is made to travel along the shift register. The shift register also includes ancillary double interaction where two pairs of quantum dots provide an ancillary function where the quantum state of one pair is replicated in the second pair. The shift register also provides bifurcation where an access path is split into two or more paths. Depending on the control pulse signals applied, quantum dots are extended into multiple paths. Control of the shift register is provided by electric control pulses. An optional auxiliary magnetic field provides additional control of the shift register.

Abstract: A novel and useful multistage semiconductor quantum detector circuit incorporating an anticorrelation mechanism. The quantum structure has at least the first stage sensor of the detector merged into the quantum structure in order to minimize loading of the quantum structure. The merged quantum structure and detector sensor may be encapsulated in a metal cage in order to provide enhanced rejection of the environmental parasitic electric and/or magnetic fields. A double boot strapping detector front-end configuration substantially eliminates the loading coming from both the gate-source and the gate-drain parasitic capacitances of the first sensor device of the detector that is connected to the quantum structure. In addition, differential detection aids in rejecting leakage, noise, and correlated interference coupling. Both dummy referenced differential detection as well as self-referenced differential detection may be employed in the detector.

Abstract: Novel and useful quantum structures that provide various control functions. Particles are brought into close proximity to interact with one another and exchange information. After entanglement, the particles are moved away from each other but they still carry the information contained initially. Measurement and detection are performed on the particles from the entangled ensemble to determine whether the particle is present or not in a given qdot. A quantum interaction gate is a circuit or structure operating on a relatively small number of qubits. Quantum interaction gates implement several quantum functions including a controlled NOT gate, quantum annealing gate, controlled SWAP gate, a controlled Pauli rotation gate, and ancillary gate. These quantum interaction gates can have numerous shapes including double V shape, H shape, X shape, L shape, I shape, etc.

Abstract: Novel and useful quantum structures that provide various control functions. Particles are brought into close proximity to interact with one another and exchange information. After entanglement, the particles are moved away from each other but they still carry the information contained initially. Measurement and detection are performed on the particles from the entangled ensemble to determine whether the particle is present or not in a given qdot. A quantum interaction gate is a circuit or structure operating on a relatively small number of qubits. Quantum interaction gates implement several quantum functions including a controlled NOT gate, quantum annealing gate, controlled SWAP gate, a controlled Pauli rotation gate, and ancillary gate. These quantum interaction gates can have numerous shapes including double V shape, H shape, X shape, L shape, I shape, etc.

Abstract: Novel and useful quantum structures that provide various control functions. Particles are brought into close proximity to interact with one another and exchange information. After entanglement, the particles are moved away from each other but they still carry the information contained initially. Measurement and detection are performed on the particles from the entangled ensemble to determine whether the particle is present or not in a given qdot. A quantum interaction gate is a circuit or structure operating on a relatively small number of qubits. Quantum interaction gates implement several quantum functions including a controlled NOT gate, quantum annealing gate, controlled SWAP gate, a controlled Pauli rotation gate, and ancillary gate. These quantum interaction gates can have numerous shapes including double V shape, H shape, X shape, L shape, I shape, etc.

Abstract: Novel and useful semiconductor structures using preferential tunneling through thin insulator layers. Semiconductor quantum structures are implemented using tunneling through a thin oxide layer. The quantum dots are fabricated with semiconductor wells, 3D fins or combinations thereof, while the tunneling path and any optional quantum transport path is implemented with gate layers. The oxide layer between the gate and the well is thin enough in the nanometer semiconductor processes to permit significant tunneling. Having a thin oxide layer on only one side of the well, while having thick oxide layers on all other sides, results in a preferential tunneling direction where tunneling is restricted to a small area resulting in aperture tunneling. The advantage being constraining quantum transport to a very narrow path, which can be approximated as unidimensional. In alternative embodiments, more than one preferential tunneling direction may be used. These techniques can be used in both planar and 3D (e.g.

Abstract: A novel and useful modified semiconductor process having staircase active well shapes that provide variable distances between pairs of locations (i.e. quantum dots) resulting in modulation of the quantum interaction strength from weak/negligible at large separations to moderate and then strong at short separations. To achieve a modulation of the distance between pairs of locations, diagonal, lateral, and vertical quantum particle/state transport is employed. As examples, both implementations of semiconductor quantum structures with tunneling through an oxide layer and with tunneling through a local well depleted region are disclosed. These techniques are applicable to both planar semiconductor processes and 3D (e.g. Fin-FET) semiconductor processes. Optical proximity correction is used to accommodate the staircase well layers. Each gate control circuit in the imposer circuitry functions to control more than one set of control gates.

Abstract: A novel and useful modified semiconductor fabrication technique for realizing reliable semiconductor quantum structures. Quantum structures require a minimization of the parasitic capacitance of the control gate and the quantum well. The modified semiconductor process eliminates the fabrication of the metal, contact, and optionally the raised diffusion layers from the quantum wells, thereby resulting in much lower well and gate capacitances and therefore larger Coulomb blockade voltages. This allows easier implementation of the electronic control circuits in that they can have larger intrinsic noise and relaxed analog resolution. Several processes are disclosed including implementations of semiconductor quantum structures with tunneling through an oxide layer as well as tunneling through a local well depleted region. These techniques can be used in both planar semiconductor processes and 3D, e.g., FinFET, semiconductor processes. A dedicated process masking step is used for realizing the raised diffusions.

Abstract: A novel and useful fully integrated quantum computer containing both quantum core circuitry and associated classical electronic control circuits on the same monolithic die. The integrated quantum computer avoids ESD loading on the quantum structures and minimizes the need for long interconnects with resultant large parasitic inductances and capacitances. Such parasitics reduce the maximum operating frequency of the realized quantum core structures. A cryostat unit functions to provide several temperatures to the quantum computer including a temperature to cool the quantum core to approximately 4° K and the interface SoC to 77° K. Alternatively, the interface circuitry is also integrated with the main QPU on the same die. A programmable pattern generator executes sequences of instructions that control the quantum core. In accordance with the sequences, a pulse generator functions to generate the control signals that are input to the quantum core to perform quantum operations.

Abstract: Novel and useful quantum structures having a continuous fully depleted well with control gates that form two quantum dot on either side of the gate. Appropriate potentials are applied to the well and control gate to control quantum tunneling between quantum dots thereby enabling quantum operations to occur. Qubits are realized by modulating applied gate potential to control tunneling through a quantum transport path between two or more sections of the well. Complex structures with a higher number of quantum dots per continuous well and a larger number of wells can be fabricated. Both planar and 3D FinFET semiconductor processes are used to build well to gate and well to well tunneling quantum structures. An injection device permits tunneling of a single quantum particle from a classic side to a quantum side of the device. Detection interface devices detect the presence or absence of a particle destructively or nondestructively.

Abstract: A novel and useful modified semiconductor process having staircase active well shapes that provide variable distances between pairs of locations (i.e. quantum dots) resulting in modulation of the quantum interaction strength from weak/negligible at large separations to moderate and then strong at short separations. To achieve a modulation of the distance between pairs of locations, diagonal, lateral, and vertical quantum particle/state transport is employed. As examples, both implementations of semiconductor quantum structures with tunneling through an oxide layer and with tunneling through a local well depleted region are disclosed. These techniques are applicable to both planar semiconductor processes and 3D (e.g. Fin-FET) semiconductor processes. Optical proximity correction is used to accommodate the staircase well layers. Each gate control circuit in the imposer circuitry functions to control more than one set of control gates.

Abstract: A novel and useful topological, scalable, and reprogrammable quantum computing machine having one or more quasi-unidimensional chord lines along which the movement of a particle is constrained. The unidimensional passage has localized energy levels that can be controlled with classic electronics. The chord line has two or more quantum dots between which a quasi-unidimensional channel is formed for the particle to travel from one qdot to the other. The tunneling path may be polysilicon, metal, thin oxide, or induced depletion region. The chord line can be in a two-dimensional space for a planar process or in a three-dimensional space with multiple layers of signal processing for a three dimensional process. A quantum structure has semiconductor dots with a layer that provides the chord line for the quantum particle evolution to occur from one dot to the other. The various layers may include polysilicon, metal, thin oxide, or induced depletion region either fully overlapped or partially overlapped.

Abstract: A novel and useful controlled quantum shift register for transporting particles from one quantum dot to another in a quantum structure. The shift register incorporates a succession of qdots with tunneling paths and control gates. Applying appropriate control signals to the control gates, a particle or a split quantum state is made to travel along the shift register. The shift register also includes ancillary double interaction where two pairs of quantum dots provide an ancillary function where the quantum state of one pair is replicated in the second pair. The shift register also provides bifurcation where an access path is split into two or more paths. Depending on the control pulse signals applied, quantum dots are extended into multiple paths. Control of the shift register is provided by electric control pulses. An optional auxiliary magnetic field provides additional control of the shift register.