Abstract: A cleaning solution for cleaning microelectronic substrates, particularly for post-CMP or via formation cleaning. The cleaning solution comprises a quaternary ammonium hydroxide, an organic amine, a corrosion inhibitor, and water. A preferred cleaning solution comprises tetramethylammonium hydroxide, monoethylanolamine, ascorbic acid, and water with the alkalinity of the cleaning solution greater than 0.073 milliequivalents base per gram of solution.
Type:
Grant
Filed:
June 6, 2000
Date of Patent:
December 10, 2002
Assignee:
ESC, Inc.
Inventors:
Shahriar Naghshineh, Jeff Barnes, Dingying Xu
Abstract: A cleaning solution for cleaning microelectronic substrates, particularly for post-CMP or via formation cleaning. The cleaning solution comprises a quaternary ammonium hydroxide, an organic amine, a corrosion inhibitor, optionally an organic acid, and water. A preferred cleaning solution comprises tetramethylammonium hydroxide, monoethylanolamine, gallic acid ascorbic acid, and water with the alkalinity of the cleaning solution greater than 0.073 milliequivalents base per gram of solution.
Type:
Application
Filed:
February 12, 2001
Publication date:
June 21, 2001
Applicant:
ESC, Inc.
Inventors:
Shahriar Naghshineh, Jeff Barnes, Ewa B. Oldak
Abstract: A cleaning solution is provided for cleaning copper-containing microelectronic substrates, particularly for post-CMP or Via formation cleaning. The cleaning solution comprises a quaternary ammonium hydroxide, an organic amine, a corrosion inhibitor, and water. A preferred cleaning solution comprises tetramethylammonium hydroxide, monoethanolamine, gallic acid, and water. The pH of the cleaning solution is greater than 10.
Type:
Grant
Filed:
November 16, 1999
Date of Patent:
February 27, 2001
Assignee:
ESC, Inc.
Inventors:
Shahriar Naghshineh, Jeff Barnes, Yassaman Hashemi, Ewa B. Oldak
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