Abstract: The invention concerns the area of ceramics an relates to a method for separating impurities from silicon carbide, said method being applicable to SiC powders from grinding sludges, and to temperature-treated and purified silicon carbide powder. The aim of the invention is to provide a method with which different impurities are substantially completely removed using a simple and economical process. This is achieved by a method in which pulverulent SiC waste products that have a mass percent of SiC of at least 50% and an average grain size d50 ranging from 0.5 to 1000 ?m and have been subjected to a temperature treatment and cooled are mechanically treated and physically separated. The physically separated SiC powder is then divided into two fractions, one of which has a mass of impurities that is greater than the mass of impurities in the other fraction at least by a factor of 2.