Abstract: A sensor element (1, 20, 21, 22) capable of sensing more than one spectral band of electromagnetic radiation with the same (x-y) spatial location, especially where the dimensions x-y-z form a set of Cartesian coordinates with z parallel to the direction of incident electromagnetic radiation, is characterized in that the element consists of a stack of sub-elements (3, 5, 7) each capable of sensing different spectral bands of electromagnetic radiation. These sub-elements (3, 5, 7) each contain a non-silicon semiconductor where the non-silicon semiconductor in each sub-element (3, 5, 7) is sensitive to and/or has been sensitized to be sensitive to different spectral bands of electromagnetic radiation.

Abstract: An luminescent composition comprises a mixture of two or more materials, emitting electromagnetic radiation when subject to stimuli, wherein the spectral emission is not calculable at a first approximation as the simple weighted sum of the spectral emissions of the materials independently subject to said stimuli. Especially advantageous compositions are achieved if the anionic matrix is an oxide and the doping anionic salt is a fluoride or vice versa.

Abstract: A spintronics element comprises two ferromagnetic layers without a non-magnetic interlayer between them. The two ferromagnetic layers may be independently switched by various means such as but not limited to applying one or more external magnetic fields, and/or employing current induced switching, and/or applying optical spin-pumping.

Abstract: A spin-valve structure is provided, illustrating the layer structure used for the magnetic tunnel junction, by a method comprising the steps of providing a substrate, growing a ferromagnetic layer on the substrate, growing a tunnel barrier layer on the ferromagnetic layer, providing a first non-magnetic metallic contact on the ferromagnetic layer and providing a second non-magnetic metallic contact for the single ferromagnetic layer. Beside such a single sided structure a double-sided structure can be provided having e.g. a Ga0.94Mn0.06As/undoped GaAs/Ga0.94Mn0.06As trilayer structure on top of a semi-insulating GaAs substrate and an undoped LT-GaAs buffer layer. There is an inner square contact and a surrounding electrical back contact. This sample structure makes it possible to perform two-probe magnetoresistance measurements through both ferromagnets and the GaAs tunnel barrier. The resistance of the device is fully dominated by the vertical tunneling process through the tunnel barrier.

Abstract: A novel and efficient method for polarization conversion, particularly from linear polarization to circular polarization, and, importantly, vice versa, is obtained using shapeanisotropic self-assembled quantum dots, which, having the advantage of extremely small size (nanometer scale), may be readily incorporated into photonic crystals and/or other optical components. Such devices also have the advantage of working in the absence of an applied magnetic field. Such devices also, when a voltage bias is applied, can be used to manipulate electron spin by manipulating light polarization in the same circuit, and vice versa. This permits a high degree of control for either or both of these in spintronics and/or optical devices, the biased quantum dot being used as a nanometer scale electro-optic modulator. Components utilizing the method and/or devices may be used as part of highly compact optical computing networks and/or spintronics systems for e.g.

Abstract: A semiconductor magnetic body comprises a layer (11 15) intended to trap electrons, wherein said layer (11 15) is surrounded on both sides by a magnetic layer (16, 17). This leads to the creation of ferromagnetic character in spatially limited regions of electronic elements such as but not limited to quantum dots, where this creation is achieved using magnetic materials which do not compositionally form part of the region but are rather contained in the zone or zones adjacent to the region.

Abstract: Disclosed is a joining element (10), especially a suture material for surgical use. Said joining element (10) is composed of a first material (12) that is essentially rigid during impingement by a relatively short-lasting tensile load on opposite sides as well as a second material (11) which is connected to the first material. The second material is substantially rigid during impingement by said tensile load on opposite sides while contracting slowly during a second period of time that is longer than the first period of time.

Abstract: A spin filtering device has: a spin filter (1) having an input region (3) for carrying an electron current, an output region (4) for carrying an electron current, and a three-dimensionally confined quantum region (2a) arranged to operate in the Coulomb blockade regime and separating the input and output regions (3 and 4) whereby electrons can only pass from the input region to the output region by tunnelling through the quantum region; and Zeeman splitting means (5) for causing Zeeman splitting in the spin filter, the quantum region (2a) and input and output regions (3 and 4) being formed such that the Zeeman splitting in the input and output regions (3 and 4) is less than the Fermi energy such that, in operation, the spin filter outputs a tunnelling current predominantly of one spin polarity. The direction of Zeeman splitting may be controlled to control the predominant spin polarity.