Abstract: A metal-oxide-semiconductor field-effect transistor (MOSFET) structure includes a semiconductor substrate, a gate structure, a channel region, a trench, an isolation region, a first conductive region, and a P-N junction. The semiconductor substrate has a semiconductor surface. The gate structure is above the semiconductor surface. The channel region is under the gate structure. The trench is formed below the semiconductor surface and adjacent to the channel region. The isolation region is in the trench. The first conductive region has a first doping type, and the first conductive region is positioned on the isolating layer and electrically coupled to the channel region. The P-N junction extends upward from the isolation region and along an edge of the first conductive region.

Abstract: A memory device is provided. The memory device includes: a package substrate; a memory chip, with chip inputs/outputs (I/Os), and attached to the package substrate; and package terminals, disposed on the package substrate, and having: functional package terminals, connected to the chip I/Os; no-connect (NC) package terminals, arranged among the functional package terminals and not connected to any of the chip I/Os; and redesigned NC package terminals, as additional ones of the NC package terminals but connected to the chip I/Os, so as to be functioned as additional functional package terminals.

Abstract: An IC structure includes a first memory stack including a plurality of semiconductor die. The plurality of semiconductor memory dies horizontally separate with each other, wherein each semiconductor die includes a top surface, a bottom surface opposite to the top surface, and four sidewalls with a first sidewall, a second sidewall, a third sidewall and a fourth sidewall, and a plurality of edge pads located on the first sidewall and arranged in multiple rows or two dimensions. The area of the bottom surface or the top surface is larger than that of any sidewall. A first part of the plurality of edge pads is located within a upper portion of the first sidewall of the semiconductor die, a second part of the plurality of edge pads is located within a lower portion of the first sidewall of the semiconductor die.

Abstract: A semiconductor device structure includes a silicon substrate, a transistor, and an interconnection. The silicon substrate has a silicon surface. The transistor includes a gate structure, a first conductive region, a second conductive region, and a channel under the silicon surface. The interconnection is extended beyond the transistor and coupled to the first conductive region of the transistor. The interconnection is disposed under the silicon surface and isolated from the silicon substrate by an isolation region.

Abstract: A memory with e-fuses includes a receiving circuit and a plurality of e-fuse groups. Each e-fuse group of the e-fuse groups is coupled to the receiving circuit through a corresponding bus group. The receiving circuit receives a plurality of blown signal sets each time and transmits each of the blown signal sets to a e-fuse group, and predetermined e-fuses of the e-fuse group are blown according to the each of the blown signal sets to adjust predetermined settings of the memory, and the each of the blown signal sets only corresponds to the e-fuse group. A number of the plurality of blown signal sets is not greater than a number of the e-fuse groups.

Abstract: A memory device is provided. The memory device includes: a latch circuit, having a first inverter and a second inverter cross-coupled with each other, wherein a first pull up transistor and a first pull down transistor of the first inverter are coupled through a first selection transistor, and a second pull up transistor and a second pull down transistor of the second inverter are coupled through a second selection transistor; a first access transistor, coupled to a first storage node of the latch circuit; and a second access transistor, coupled to a second storage node of the latch circuit.

Abstract: A transistor with low leakage currents includes a substrate, a gate, spacers, pad dielectric layers, a source, and a drain. The gate is formed above a gate dielectric layer, wherein the gate dielectric layer has a first dielectric constant. The spacers have a second dielectric constant. The pad dielectric layers are formed under the spacers and having a third dielectric constant. The source and the drain are adjacent to the spacers and in two opposite directions of the gate. The first dielectric constant, the second dielectric constant, and the third dielectric constant are different from each other.

Abstract: A method to form a first diamond composite wafer, a second diamond composite wafer or a third diamond composite wafer with a predetermined diameter includes the following steps: preparing a plurality of diamond blocks, wherein each diamond block has a dimension smaller than the predetermined diameter; attaching the plurality of diamond blocks to a first semiconductor substrate with the predetermined diameter to form a first temporary composite wafer, wherein a thermal conductivity of the first semiconductor substrate is smaller than that of the diamond block; and filling gaps among the plurality of diamond blocks of the first temporary composite wafer to form the first diamond composite wafer; or attaching the first diamond composite wafer to a second semiconductor substrate with the predetermined diameter to form the second diamond composite wafer, or removing the first semiconductor substrate from the first diamond composite wafer to form the third diamond composite wafer.

Abstract: A composite substrate containing thermally conductive materials is provided. The composite substrate includes a glass base, a first RDL, a second RDL and a thermal dissipation layer. The glass base has a first surface, a second surface opposite to the first surface and a through glass via (TGV) extending to the second surface from the first surface. The first RDL is disposed adjacent to the first surface of the glass base or the thermal dissipation layer. The second RDL is disposed adjacent to the second surface of the glass base. The thermal dissipation layer is disposed on the glass base, having a through thermal via (TTV) extending to the TGV.

Abstract: A memory structure includes a semiconductor substrate, an active region, a transistor, and a buried-WL (word line). The semiconductor substrate has an original semiconductor surface. The active region is in the semiconductor substrate and surrounded by a shallow trench isolation (STI) region. The transistor is formed based on the active region. The buried-WL (word line) extends through the active region and the STI region. The buried-WL has variable depth or width along the extension direction of the buried-WL.

Abstract: An IC structure includes a memory stack including a plurality of semiconductor die. The semiconductor memory dies horizontally separate with each other, wherein each semiconductor die includes a top surface, a bottom surface, four sidewalls with a first sidewall, a second sidewall, a third sidewall and a fourth sidewall, and a plurality of edge pads located on the first sidewall and arranged in multiple rows or two dimensions. The area of the bottom surface or the top surface is larger than that of any sidewall. A first part of the plurality of edge pads is located within an upper portion of the first sidewall of the semiconductor die, a second part of the plurality of edge pads is located within a lower portion of the first sidewall of the semiconductor die. One the semiconductor die includes at least one thermal edge portion exposed from the second sidewall.

Abstract: An IC structure includes a memory stack including a plurality of semiconductor die. The semiconductor memory dies horizontally separate with each other, wherein each semiconductor die includes a top surface, a bottom surface, four sidewalls with a first sidewall, a second sidewall, a third sidewall and a fourth sidewall, and a plurality of edge pads located on the first sidewall and arranged in multiple rows or two dimensions. The area of the bottom surface or the top surface is larger than that of any sidewall. A first part of the plurality of edge pads is located within an upper portion of the first sidewall of the semiconductor die, a second part of the plurality of edge pads is located within a lower portion of the first sidewall of the semiconductor die. One the semiconductor die includes at least one thermal edge portion exposed from the second sidewall.

Abstract: A memory includes a plurality of e-fuse sets, a sensing circuit, an Error-Correcting Code (ECC) circuit, and a plurality of registers. Each e-fuse set includes a plurality of e-fuses, and each e-fuse of the plurality of e-fuses corresponds to a first blown result. The sensing circuit senses the plurality of e-fuses to output a plurality of first blown results. The ECC circuit receives the plurality of first blown results and corrects a first blown result if the first blown result includes an error or directly outputs the first blown result if the first blown result comprises no error to generate a second blown result. The plurality of registers receive a plurality of second blown results. The plurality of second blown results adjusts predetermined settings of the memory, and a number of the plurality of registers is less than a number of the plurality of e-fuses.

Abstract: A transistor structure includes a gate, a spacer, a channel region, a first concave, and a first conductive region. The gate is above a silicon surface. The spacer is above the silicon surface and at least covers a sidewall of the gate. The channel region is under the silicon surface. The first conductive region is at least partially formed in the first concave, wherein a conductive region of a neighborhood transistor structure next to the transistor structure is at least partially formed in the first concave.

Abstract: A SRAM cell structure includes a plurality of transistors, a set of contacts, a word-line, a bit-line, a VDD contacting line and a VSS contacting line. The plurality of transistors include n transistors, wherein n is a positive integral less than 6. The set of contacts are coupled to the plurality of transistors. The word-line is electrically coupled to the plurality of transistors. The bit-line and a bit line bar are electrically coupled to the plurality of transistors. The VDD contacting line is electrically coupled to the plurality of transistors. The VSS contacting line is electrically coupled to the plurality of transistors. Wherein as a minimum feature size of the SRAM cell structure gradually decreases from 28 nm, an area size of the SRAM cell in terms of square of the minimum feature size (?) is the same or substantially the same.

Abstract: An IC structure includes a first memory stack including a plurality of semiconductor die. The plurality of semiconductor memory dies horizontally separate with each other, wherein each semiconductor die includes a top surface, a bottom surface opposite to the top surface, and four sidewalls with a first sidewall, a second sidewall, a third sidewall and a fourth sidewall, and a plurality of edge pads located on the first sidewall and arranged in multiple rows or two dimensions. The area of the bottom surface or the top surface is larger than that of any sidewall. A first part of the plurality of edge pads is located within a upper portion of the first sidewall of the semiconductor die, a second part of the plurality of edge pads is located within a lower portion of the first sidewall of the semiconductor die.

Abstract: A transistor structure includes a semiconductor substrate, a gate structure, a channel region, and a first conductive region. The semiconductor substrate has a semiconductor surface. The gate structure is above the semiconductor surface, and a first concave is formed to reveal the gate structure. The channel region is under the semiconductor surface. The first conductive region is electrically coupled to the channel region, and a second concave is formed to reveal the first conductive region. A mask pattern in a photolithography process is used to define the first concave, and the mask pattern only defines one dimension length of the first concave.

Abstract: An IC structure includes a first memory stack including a plurality of semiconductor die. The plurality of semiconductor memory dies horizontally separate with each other, wherein each semiconductor die includes a top surface, a bottom surface opposite to the top surface, and four sidewalls with a first sidewall, a second sidewall, a third sidewall and a fourth sidewall, and a plurality of edge pads located on the first sidewall and arranged in multiple rows or two dimensions. The area of the bottom surface or the top surface is larger than that of any sidewall. A first part of the plurality of edge pads is located within a upper portion of the first sidewall of the semiconductor die, a second part of the plurality of edge pads is located within a lower portion of the first sidewall of the semiconductor die.

Abstract: A semiconductor device includes a cage, a semiconductor chip, a package body and a first RDL (redistribution layer). The cage has a first cage surface, a second cage surface opposite to the first cage surface and a cavity extending towards the second cage surface from the first cage surface. The semiconductor chip is disposed in the cavity. The package body covers the semiconductor chip. The first RDL is disposed over the package body and the semiconductor chip.

Abstract: An IC structure includes a memory stack including semiconductor dies horizontally separate with each other, wherein each semiconductor die has a top surface, a bottom surface, four sidewalls, and a plurality of edge pads arranged along a sidewall. The IC structure further includes a memory controller under the first memory stack and electrically connected to the edge pads of each semiconductor die, a processor circuit disposed over and electrically connected to the memory controller, and a packaging substrate under and electrically connected to the memory controller. A die area of the memory controller is larger than the sum of a horizontal cross-section area of the memory stack and a die area of the processor circuit. There is no interposer between the packaging substrate and the memory controller, and there is no TSV in each semiconductor die.