Patents Assigned to Etron Technoloy, Inc.
  • Patent number: 8824238
    Abstract: A memory device includes a DRAM, a first bi-directional tracking circuit and a second bi-directional tracking circuit. The DRAM includes a cell, a word line and a bit line. The first bi-directional tracking circuit is configured to track a first timing constraint associated with turning on or turning off the word line. The second bi-directional tracking circuit is configured to track a second timing constraint associated with turning on the bit line, turning off the bit line, or accessing the cell via the bit line.
    Type: Grant
    Filed: March 25, 2013
    Date of Patent: September 2, 2014
    Assignee: Etron Technoloy, Inc.
    Inventors: Ho-Yin Chen, Hung-Jen Chang, Chun Shiah