Patents Assigned to Eudyna Devices In.
  • Semiconductor substrate, substrate for semiconductor crystal growth, semiconductor device, optical semiconductor device, and manufacturing method thereof
    Patent number: 7442999
    Abstract: A semiconductor substrate includes: a semiconductor crystal layer grown on one face of a substrate; and a stress relaxation layer, which is formed on the other face opposite to the one face and the side face of the substrate and applies stress to the substrate in the same direction as the direction of stress which the semiconductor crystal layer applies to the substrate. In this case, stress of the semiconductor crystal layer to the substrate is offset. Therefore, warp of the semiconductor substrate and generation of cracks are inhibited.
    Type: Grant
    Filed: March 29, 2006
    Date of Patent: October 28, 2008
    Assignee: Eudyna Devices In.
    Inventors: Shunsuke Kurachi, Tsutomu Komatani