Patents Assigned to Eugene Technology Co., Ltd.
  • Patent number: 10192760
    Abstract: A substrate supporting unit, a substrate processing apparatus, and a method of manufacturing the substrate supporting unit are provided. The substrate supporting unit includes a susceptor provided with heaters to heat a substrate placed on the susceptor, and including a first temperature region and a second temperature region having a higher temperature than that of the first temperature region; a heat dissipating member including a contact surface being in thermal contact with the second temperature region; and a reflecting member disposed approximately in parallel with one surface of the susceptor to reflect heat emitted from the susceptor toward the susceptor.
    Type: Grant
    Filed: October 26, 2015
    Date of Patent: January 29, 2019
    Assignee: Eugene Technology Co., Ltd.
    Inventors: Dong-Keun Lee, Kyung-Jin Chu, Sung-Tae Je, Il-Kwang Yang
  • Patent number: 9425057
    Abstract: A method for manufacturing a memory device having a vertical structure according to one embodiment of the present invention comprises: a step for alternatingly laminating one or more insulation layers and one or more sacrificial layers on a substrate; a step for forming a penetration hole for penetrating the insulation layer and the sacrificial layer; a step for forming a pattern for filling up the penetration hole; a step for forming an opening for penetrating the insulation layer and the sacrificial layer; and a step for removing the sacrificial layer by supplying an etchant through the opening, wherein the step for laminating the insulation layer includes a step for depositing a first silicon oxide film by supplying to the substrate at least one gas selected from the group consisting of SiH4, Si2H6, Si3H8, Si4H10, and the step for laminating the sacrificial layer includes a step for depositing a second silicon oxide film by supplying dichlorosilane (SiCl2H2) to the substrate.
    Type: Grant
    Filed: October 6, 2011
    Date of Patent: August 23, 2016
    Assignee: Eugene Technology Co., Ltd.
    Inventors: Sung Kil Cho, Hai Won Kim, Sang Ho Woo, Seung Woo Shin, Gil Sun Jang, Wan Suk Oh
  • Patent number: 9416451
    Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber where processes with respect to a substrate are carried out, a substrate support on which the substrate is placed, the substrate support being disposed within the chamber, and an antenna disposed in an upper portion of the chamber to form an electric field within the chamber. The antenna includes a first antenna and a second antenna, which are disposed in rotational symmetry with respect to a preset center. The first antenna includes a first inner antenna and a first intermediate antenna which respectively have semi-circular shapes and first and second radii and are respectively disposed on one side and the other side with respect to the preset center line and a first connection antenna connecting the first inner antenna to the first intermediate antenna.
    Type: Grant
    Filed: October 6, 2011
    Date of Patent: August 16, 2016
    Assignee: Eugene Technology Co., Ltd.
    Inventors: Sung Tae Je, Il Kwang Yang, Byung Gyu Song, Song Hwan Park
  • Patent number: 9312125
    Abstract: A cyclic deposition method for thin film formation includes forming a silicon thin film on an object by injecting a silicon precursor into a chamber in which the object is loaded, depositing silicon on the object, and performing a first purge, removing an unreacted portion of the silicon precursor and reaction by-products from the interior of the chamber, pre-processing a surface of the silicon thin film by forming a plasma atmosphere in the chamber and supplying a first reaction source having a hydrogen atom, and forming the silicon thin film as an insulating film including silicon, by forming the plasma atmosphere in the chamber and supplying a second reaction source having one or more oxygen atoms, one or more nitrogen atoms, or a mixture thereof.
    Type: Grant
    Filed: December 23, 2014
    Date of Patent: April 12, 2016
    Assignee: Eugene Technology Co., Ltd.
    Inventors: Hai-Won Kim, Seok-Yun Kim, Chang-Hun Shin, Jeong-Hoon Lee
  • Patent number: 8937012
    Abstract: Provided is a production method for a semiconductor device comprising a metal silicide layer. According to one embodiment of the present invention, the production method for a semiconductor device comprises the steps of: forming an insulating layer on a substrate, on which a polysilicon pattern has been formed, in such a way that the polysilicon pattern is exposed; forming a silicon seed layer on the exposed polysilicon pattern that has been selectively exposed with respect to the insulating layer; forming a metal layer on the substrate on which the silicon seed layer has been formed; and forming a metal silicide layer by carrying out a heat treatment on the substrate on which the metal layer has been formed.
    Type: Grant
    Filed: August 30, 2011
    Date of Patent: January 20, 2015
    Assignee: Eugene Technology Co., Ltd.
    Inventors: Hai Won Kim, Sang Ho Woo, Sung Kil Cho, Gil Sun Jang
  • Patent number: 8876976
    Abstract: Disclosed is a chemical vapor deposition apparatus for equalizing a heating temperature, which maintains the heating temperature of a heater provided therein uniform not only on the lower surface of the heater but also on the upper surface thereof, so that a thin film having a uniform thickness is deposited on a wafer. In order to maintain the heating temperature of the heater of the chemical vapor deposition apparatus uniform, the chemical vapor deposition apparatus includes a thermal insulation reflecting plate for reflecting heat from the lower surface of the heater and a heat dissipation member disposed between the thermal insulation reflecting plate and the heater to be in direct contact with the area of the heater having a high temperature, or includes a heat dissipation member mounted underneath the area of the heater having a high temperature.
    Type: Grant
    Filed: November 1, 2007
    Date of Patent: November 4, 2014
    Assignee: Eugene Technology Co., Ltd.
    Inventor: Pyung-yong Um
  • Patent number: 8828890
    Abstract: Provided is a method of depositing a cyclic thin film that can provide excellent film properties and step coverage. The method comprises the steps of forming a silicon thin film by repeating a silicon deposition step for depositing silicon on a substrate by injecting a silicon precursor into a chamber into which the substrate is loaded and a first purge step for removing a non-reacted silicon precursor and a reacted byproduct from the chamber; and forming the insulating film including silicon from the silicon thin film by forming a plasma atmosphere into the chamber.
    Type: Grant
    Filed: August 1, 2011
    Date of Patent: September 9, 2014
    Assignee: Eugene Technology Co., Ltd.
    Inventors: Hai Won Kim, Sang Ho Woo
  • Patent number: 8771418
    Abstract: According to one embodiment of the present invention, a substrate-processing apparatus comprises: a lower chamber with an open top; an upper chamber which covers the top of the lower chamber, and which cooperates with the lower chamber to form an internal space for substrate-processing; a shower head arranged in a lower portion of the upper chamber to supply reaction gas to the internal space, and forming a buffer space between the shower head and the upper chamber; a gas supply port formed in the upper chamber to supply reaction gas to the buffer space; and a diffusion unit arranged in the buffer space to diffuse the reaction gas supplied through the gas supply port.
    Type: Grant
    Filed: July 2, 2010
    Date of Patent: July 8, 2014
    Assignee: Eugene Technology Co., Ltd.
    Inventors: Sung Tae Je, Chan Yong Park, Kyoung Hun Kim
  • Patent number: 8771417
    Abstract: A substrate processing apparatus includes a chamber having an inner space where a process is carried out with respect to a substrate and an exhaust unit for exhausting substance in the inner space to the outside. The exhaust unit includes a first exhaust plate located at an upstream of an exhaust path of the substance, the first exhaust plate having first exhaust holes, and a second exhaust plate located at a downstream of the exhaust path, the first exhaust plate having second exhaust holes. The first exhaust plate is disposed outside a support member, and the second exhaust plate is disposed below the first exhaust plate generally in parallel to the first exhaust plate. The exhaust unit further includes first covers for selectively opening and closing the first exhaust holes and second covers for selectively opening and closing the second exhaust holes.
    Type: Grant
    Filed: September 4, 2008
    Date of Patent: July 8, 2014
    Assignee: Eugene Technology Co., Ltd.
    Inventors: Song Keun Yoon, Byoung Gyu Song, Jae Ho Lee, Kyong Hun Kim
  • Patent number: 8585823
    Abstract: The present invention relates to a chemical vapor deposition (CVD) apparatus which has rotation type heater. Particularly, the inventive CVD apparatus has advantageous effects in that it includes a motor for rotating the heater and a position sensor assembly for detecting the orientational position of the heater, so that the thickness of a thin film being deposited on a wafer can be made uniform through the rotation of the heater upon the deposition in spite of uneven introduction of a reaction gas into a reaction chamber, and the orientational positions of the wafer at the start and the end of the deposition process which are identical to each other can be secured to thereby orient the wafer in a predetermined direction on the heater.
    Type: Grant
    Filed: June 23, 2006
    Date of Patent: November 19, 2013
    Assignee: Eugene Technology Co., Ltd.
    Inventor: Pyung-yong Um
  • Patent number: 8528499
    Abstract: Disclosed is a substrate processing apparatus and method. The substrate processing apparatus includes a process chamber (10) providing an internal space, in which a process is carried out onto a substrate; a support member (30) installed in the process chamber (10) to support the substrate; and a shower head (20) located above the support member (30) to supply a source gas toward the support member (30), wherein the shower head (20) includes a first injection surface (24) located at a position separated from the upper surface of the substrate by a first distance, and provided with outlets of first injection holes (24a) to inject the source gas; and a second injection surface (26) located at a position separated from the upper surface of the substrate by a second distance being different from the first distance, and provided with outlets of second injection holes (26a) to inject the source gas.
    Type: Grant
    Filed: March 27, 2009
    Date of Patent: September 10, 2013
    Assignee: Eugene Technology Co., Ltd.
    Inventors: Sung-Tae Je, Il-Kwang Yang, Chan-Yong Park
  • Publication number: 20130171827
    Abstract: A method for manufacturing a memory device having a vertical structure according to one embodiment of the present invention comprises: a step for alternatingly laminating one or more insulation layers and one or more sacrificial layers on a substrate; a step for forming a penetration hole for penetrating the insulation layer and the sacrificial layer; a step for forming a pattern for filling up the penetration hole; a step for forming an opening for penetrating the insulation layer and the sacrificial layer; and a step for removing the sacrificial layer by supplying an etchant through the opening, wherein the step for laminating the insulation layer includes a step for depositing a first silicon oxide film by supplying to the substrate at least one gas selected from the group consisting of SiH4, Si2H6, Si3H8, Si4H10, and the step for laminating the sacrificial layer includes a step for depositing a second silicon oxide film by supplying dichlorosilane (SiCl2H2) to the substrate.
    Type: Application
    Filed: October 6, 2011
    Publication date: July 4, 2013
    Applicant: Eugene Technology Co., Ltd.
    Inventors: Sung Kil Cho, Hai Won Kim, Sang Ho Woo, Seung Woo Shin, Gil Sun Jang, Wan Suk Oh
  • Publication number: 20130130480
    Abstract: Disclosed is a method for manufacturing a semiconductor device having a multilayer structure. The method for manufacturing a semiconductor device according to the present invention comprises the loading of a substrate into the chamber of a chemical vapor deposition apparatus and the forming of a multilayer structure in which a plurality of doped amorphous silicon layers and a plurality of insulation layers are alternately stacked. Said layers are stacked by alternately and repetitively forming the doped amorphous silicon layer on the substrate by supplying a conductive dopant and silicon precursor into the chamber where the substrate is loaded, and forming the insulation layer containing silicon on the substrate by introducing the silicon precursor and a reaction gas into the chamber where the substrate is loaded.
    Type: Application
    Filed: September 1, 2011
    Publication date: May 23, 2013
    Applicant: Eugene Technology Co., Ltd.
    Inventors: Hai Won Kim, Sang Ho Woo, Sung Kill Cho, Gil Sun Jang
  • Patent number: 8312840
    Abstract: Disclosed is a substrate processing apparatus and method. The substrate processing apparatus includes a chamber (10) providing an internal space, in which a process is carried out onto a substrate; a gas supply unit (40) supplying a source gas to the internal space; a coil (16) generating an electric field in the internal space to generate plasma from the source gas; and an adjustment ring (50) disposed on a flow path of the plasma toward a support member to adjust the flow of the plasma. The chamber (10) includes a process chamber (12), in which the support member is provided and the process is carried out by the plasma; and a generation chamber (14), in which the plasma is generated by the coil (16), provided on the upper surface of the process chamber (12), and the adjustment ring (50) is installed at the lower end of the generation chamber (14).
    Type: Grant
    Filed: March 23, 2009
    Date of Patent: November 20, 2012
    Assignee: Eugene Technology Co., Ltd.
    Inventor: Il-Kwang Yang
  • Patent number: 8030597
    Abstract: A partition-type heating apparatus has advantageous effects in that a material to be heated, i.e., a reaction gas used in a chemical vapor deposition (CVD) process, is pre-heated and the pre-heated reaction gas flows through a flow channel defined by the vertical and horizontal partitions so that the flowing reaction gas is heated by the transfer of heat generated from a hot wire during the flow of the reaction gas, thereby securing heating performance required for a small-sized heating apparatus.
    Type: Grant
    Filed: October 11, 2006
    Date of Patent: October 4, 2011
    Assignee: Eugene Technology Co., Ltd.
    Inventor: Pyung-yong Um
  • Publication number: 20100319621
    Abstract: A plasma processing apparatus includes a chamber providing an interior space where a process is performed upon a target; and a plasma generating unit generating an electric field in the interior space to generate plasma from a source gas supplied to the interior space. The plasma generating unit includes an upper source disposed substantially parallel to an upper surface of the chamber, an upper generator connected to the upper source to supply a first current to the upper source, a lateral source surrounding a lateral side of the chamber, and a lateral generator connected to the lateral source to supply a second current to the lateral source. The plasma generating unit further includes an upper matcher disposed between the upper generator and the upper source, and a lower matcher disposed between the lateral generator and the lateral source.
    Type: Application
    Filed: February 12, 2009
    Publication date: December 23, 2010
    Applicant: Eugene Technology Co., Ltd.
    Inventors: Sang-Ho Woo, Il-Kwang Yang
  • Patent number: 7326438
    Abstract: The present invention relates to a method for depositing a nitride film using a chemical vapor deposition apparatus of single chamber type, and more particularly to a method for depositing a nitride film that is capable of depositing the nitride film in which an area of the nitride film at the top of an interlayer isolation film has a larger thickness compared to each area thereof at the sides and the bottom of the interlayer isolation film and/or a contact hole by regulating a mixture ratio of an ammonia gas and a silane gas, both of which being process gases, using a chemical vapor deposition apparatus of single chamber type.
    Type: Grant
    Filed: September 19, 2003
    Date of Patent: February 5, 2008
    Assignee: Eugene Technology Co., Ltd.
    Inventor: Pyung-Yong Um