Abstract: Microelectronics having form factors (e.g., dimensions and functionality) comparable with traditional microelectronics, but with considerably simplified design, and their methods of manufacture are provided. Microelectronics and methods that implement microelectronics are capable of being forming without the need for through-vias. Exemplary dielectrics in these embodiments include, but are not limited to, high Q, temperature stable and high k dielectrics. Microelectronics and methods are capable of combination with any other passive electronic component such as a resistor or inductor further improving functionality and reducing space requirements on the circuit. Microelectronics and methods are configured to be mounted to a short block or other device without the use of a through-via, simplifying connection to a circuit.

Abstract: Capacitors having form factors (e.g., dimensions and functionality) comparable with traditional single layer capacitors, but with considerably higher capacitance and methods of their manufacture are provided. Capacitors and methods that implement capacitors where at least one of the dielectric layers is reduced in thickness post firing to produce a device robust enough for automated handling and provide a stable surface for wire-bonding are also provided. Capacitors and methods that implement an internal electrode between at least two layers of pre-fired ceramic dielectric are also provided. Capacitors and methods that implement the integration of multiple dielectric types in a single device producing high frequency performance characteristics are also provided. Capacitors and dielectrics that implement the combination of a multi-layer capacitor with a thin single layer capacitor to further increase operating frequency and capacitance are also provided.