Abstract: An insulating element insulates a contact area of an electronic component from other contact areas of the component. In order to ensure an assembly that is as trouble-free as possible as well as a trouble-free operation, the insulation element has at least on a first section, which is accommodated inside a contact recess of a contact during operation, is provided with an outer contour that enables an accommodation with the utmost smallest amount of play inside the contact recess.

Abstract: To compactly design a circuit configuration of a plurality of electronic components a power semiconductor module, in particular, an externally controllable, matrix converter has conduction devices for input, control, and output signals and/or a connecting device for the electronic components formed among one another as a bus structure on a base substrate.

Abstract: A power semiconductor module contains a power component and a sensor component. The power component is disposed on a first substrate. The sensor component is electrically and/or mechanically insulated from the power component by being disposed on an individual, separate second substrate. In this manner, disturbances of the sensor system section caused by the power section and its operation can be avoided particularly reliably.

Abstract: A housing device that is used to accomodate at least one power semiconductor module has increased flexibility. Areas of the housing which are configured to receive contact elements in a variety of positions are configured such that the contact elements can be disposed and oriented in a plurality of ways when disposed in each position.

Abstract: A substrate for power semiconductor modules with a through-plating of solder, includes two metal plates and a ceramic plate which is seated as a layer between the metal plates and has a through hole formed therein. The substrate is plated through by making a through hole in one of the metal plates in alignment with the through hole in the ceramic plate and applying a paste solder to one side of the substrate. The substrate is then subjected to a furnace step, so that the paste solder flows into the through holes and the solder makes a permanent contact between the two metal plates. A method for producing the substrate is also provided.

Abstract: A power semiconductor component having a mesa edge termination is described. The component has a semiconductor body with first and second surfaces. An inner zone of a first conductivity type is disposed in the semiconductor body. A first zone is disposed in the semiconductor body and is connected to the inner zone. An edge area outside of the first zone has areas etched out. A second zone of a second conductivity type is disposed in the semiconductor body and is connected to the inner zone, and a boundary area between the second zone and the inner zone defines a pn junction. A field stop zone is adjacent the first surface in the edge area. The field stop zone is formed of the first conductivity type and is embedded in the semiconductor body, and the field stop zone is connected to the first zone and to the inner zone.

Abstract: In order to fix a semiconductor module to a heat sink, the semiconductor module and the heat sink are clamped together by one or more clips made of spring material, i.e. spring clips. A mutually matched form of the spring clips optimizes the connection between the heat sink and the semiconductor modules. A respective connection of clip body and heat sink or semiconductor module is advantageously effective in such a way that the spring clip can be inserted into a respective spring clip receptacle and holds automatically on/in the heat sink or semiconductor module.

Abstract: A semiconductor component has a semiconductor body with at least one integrated lateral resistor. The lateral resistor is formed with a dopant concentration in the resistor region. The resistor region is located in a region which is accessible from the surface of the semi-conductor component and it has a defined dopant concentration. Scattering centers are provided in the region of the lateral resistor which reduce a temperature dependency of the lateral resistor.

Abstract: A power diode includes at least one semiconductor body having an inner zone f a first conductivity type and a given doping level, a cathode zone of the first conductivity type and a doping level higher than the given doping level, and an anode zone of a second conductivity type opposite the first conductivity type and a doping level higher than the given doping level. The inner zone has at least a first region with a first predetermined thickness being dimensioned for a required blocking voltage and a second region with a second thickness being greater than the first predetermined thickness by at least a factor of 1.4. The area and/or the minority carrier life of first and second partial diodes is dimensioned for causing a current flowing through the first partial diode in a conductive phase to be greater than a current flowing through the second partial diode by at least a factor of 2.