Abstract: In order to obtain a minimal leakage inductance in a semiconductor component, it is necessary to provide at least two adjacent switching elements whose load current connection elements which are adjacent on one housing side to have different polarities. A multiplicity of even-numbered switching elements are advantageously disposed next to one another on an alignment line. The leads between the load current connection elements and the load current connections of the switching elements that are disposed next to one another advantageously run approximately orthogonally with respect to the alignment line. The assigned load current connection elements then alternately have the first and the second supply potential and this minimizes the leakage inductance.

Abstract: A method of fabricating a silicon power semiconductor with a stop zone includes forming a stop zone by driving oxygen into a semiconductor substrate in a targeted manner and subsequently heating the oxygen with the semiconductor substrate to form thermal donors, and producing, at or near a surface of the semiconductor substrate, an increased oxygen concentration in comparison with other semiconductor regions by ion implantation.