Patents Assigned to EUPEC Europaeische Gesellschaft fuer Leitungshalbleiter mbH & Co. KG
  • Method for producing a power semiconductor device with a stop zone
    Patent number: 6660569
    Abstract: A method of fabricating a silicon power semiconductor with a stop zone includes forming a stop zone by driving oxygen into a semiconductor substrate in a targeted manner and subsequently heating the oxygen with the semiconductor substrate to form thermal donors, and producing, at or near a surface of the semiconductor substrate, an increased oxygen concentration in comparison with other semiconductor regions by ion implantation.
    Type: Grant
    Filed: July 2, 2001
    Date of Patent: December 9, 2003
    Assignee: EUPEC Europaeische Gesellschaft fuer Leitungshalbleiter mbH & Co. KG
    Inventors: Reiner Barthelmess, Hans-Joachim Schulze