Patents Assigned to EUPEC Europaeische Gesellschaft fur Leistungshalbleiter mbH
-
Patent number: 7319250Abstract: A method for producing a semiconductor component has the following step: the front side (101) of the semiconductor body (100) is irradiated with high-energy particles using the terminal electrode (40) as a mask, in order to produce recombination centres (80A, 80B) in the semiconductor body (100) for the recombination of the first and second conduction type of charge carriers.Type: GrantFiled: October 7, 2005Date of Patent: January 15, 2008Assignee: EUPEC Europaeische Gesellschaft fur Leistungshalbleiter mbHInventors: Reiner Barthelmess, Hans-Joachim Schulze
-
Patent number: 7319196Abstract: A bonding wire (1) includes a matrix material (2) and a filler (3) embedded in this matrix material (2), the coefficient of thermal expansion of the filler (3) being lower than the coefficient of thermal expansion of the matrix material (2), and the filler (3) content by weight amounting to at least 25% of the weight of the bonding wire (1). Also, a bonded connection between a bonding wire and a substrate may use such a bonding wire.Type: GrantFiled: September 6, 2005Date of Patent: January 15, 2008Assignee: EUPEC Europaeische Gesellschaft fur Leistungshalbleiter mbHInventors: Guy LeFranc, Christof Klos
-
Patent number: 7315439Abstract: In order to limit an overvoltage at a parallel circuit of IGBT (3) and freewheeling diode (7), an undesirable current spike is used to switch on the intrinsically turned-off IGBT (3?) during the presence of the current spike precisely to an extent such that a current which counteracts the overvoltage arises in the IGBT/freewheeling diode pair. The oppositely acting current reduces the current gradient in leakage inductances (L?) and reduces the undesirable induced overvoltages.Type: GrantFiled: March 10, 2004Date of Patent: January 1, 2008Assignee: EUPEC Europaeische Gesellschaft fur Leistungshalbleiter mbHInventors: Mark Muenzer, Reinhold Bayerer, Peter Kanschat
-
Patent number: 7291914Abstract: A power semiconductor module has a substrate (1) on which several pressure elements (16, 17, 18, 19) perform a mechanical pressure (F) at different areas (10, 11, 12, 13) thereof in a direction of a cooling element in order to press the underside (1b) of the substrate and reject heat towards said cooling element. In order to apply an essentially even and non-influenced by the component tolerances force to each area of the substrate, the pressure elements perform an elastic action on the substrate areas. The pressure elements (16, 17, 18, 19) are formed on the first part (21) of a housing which is movable with respect to the second part (22) thereof provided with spacing elements (30, 31, 32, 33) defining a supporting surface (34) in such a way that the first part (21) of the housing is fixed at a certain distance from the substrate (1).Type: GrantFiled: December 9, 2005Date of Patent: November 6, 2007Assignee: EUPEC Europaeische Gesellschaft fur Leistungshalbleiter mbHInventor: Thilo Stolze
-
Patent number: 7279963Abstract: A semiconductor device has first, second, and third connecting leads (1, 2, 3), whose respective base points (1f, 2f, 3f) have centroids (1m, 2m, 3m). The connecting leads are arranged wherein an angle (?) between a first line drawn between the centroids (1m, 3m) of the base points (1f, 3f) of first lead (1) and third lead (3) and a second line drawn between the centroids (2m, 3m) of the base points (2f, 3f) of second lead (2) and third lead (3) is 20° maximum. In addition, a semiconductor module may incorporate two or more semiconductor devices which are connected electrically in parallel.Type: GrantFiled: June 2, 2005Date of Patent: October 9, 2007Assignee: eupec Europäische Gesellschaft für Leistungshalbleiter mbHInventors: Thomas Passe, Oliver Schilling
-
Patent number: 6373079Abstract: The thyristor is based on a semiconductor body with an anode-side base zone of the first conductivity type and one or more cathode-side base zones of the opposite, second conductivity type. Anode-side and cathode-side emitter zones are provided, and at least one region in the cathode-side base zone whose geometry gives it a reduced breakdown voltage as compared with the remaining regions in the cathode-side base zone and the edge of the semiconductor body. At the anode, below the region of reduced breakdown voltage, the thyristor has at least one recombination zone in which the free charge carriers have a reduced lifetime.Type: GrantFiled: March 30, 1999Date of Patent: April 16, 2002Assignee: Eupec Europaeische Gesellschaft fur Leistungshalbleiter mbH+CO.KGInventors: Martin Ruff, Hans-Joachim Schulze
-
Patent number: 5310701Abstract: A method for mounting semiconductor bodies on a substrate includes bonding ires to a substrate being formed of metal at least in given locations. Semiconductor bodies are laterally fixed to the given locations of the substrate with the wires. The semiconductor bodies are subsequently materially joined to the substrate in the given locations.Type: GrantFiled: January 13, 1993Date of Patent: May 10, 1994Assignee: Eupec Europaeische Gesellschaft fur Leistungshalbleiter mbH&CoInventors: Franz Kaussen, Martin Figura