Abstract: The semiconductor component has several regularly arranged active cells (1), each comprising at least one main defining line (8). A bonding wire (18, 20) is fixed to at least one bonding surface (14, 16) by bonding with a bonding tool, oscillating in a main oscillation direction (22, 24), for external electrical contacting. The bonding surfaces (14, 16) are of such a size and oriented such that the main oscillation direction (22, 24) runs at an angle (?), with a difference of 90° to the main defining line (8).

Abstract: A high-voltage module comprises a housing (9) which accommodates at least one structural component (4, 5) that is fastened on a metal-ceramics substrate from a ceramic layer (1) comprising a first main face (11) and a second main face (12) opposite said first main face (11), an upper metal layer (15) on the first main face (11) and a lower metal layer (16) on the second main face (12). The high-voltage module is further comprising on the outer edges (14) of the substrate either a cast from weakly conductive particles (17) and a gel, or a cast from particles having a high dielectric constant as compared to the cast gel (17), and a gel.

Abstract: The controllable semiconductor component (1) has a body (10) consisting of doped silicon. Two separate electrodes (3, 4) are connected to the silicon, between which an electric operating voltage (U) of the component (1) is applied. A control electrode (2), to which an electric control voltage (Us) for controlling the component (1) is applied, is insulated from the silicon of the body (10) by electric insulation material (100). According to the invention, the control electrode (2) has two control electrode sections (21, 22), separated from one another by a gap (23). Said semiconductor component can be used for IGBTs and MOS transistors.