Abstract: The invention provides a multi-segment focusing lens for effective laser processing method that allows to cut/scribe/cleave/dice or, generally speaking, separate, hard, brittle, and solid wafers or glass sheets, which are either bare or have microelectronic or MEMS devices formed on them. The multi-segment focusing lens is used in a laser processing method comprises a step of modifying a pulsed laser beam by a shaping and focusing unit, including a multi-segment lens. Said multi-segment lens creates multiple beam convergence zones, more particularly, multiple focal points, said and interference spike shape intensity distribution exceeding the optical damage threshold of the workpiece material. Said interference spike shape intensity distribution is situated in the bulk of the workpiece. During the aforementioned step a modified area is created.

Abstract: This invention provides an effective and rapid method of laser processing for separating semiconductor devices formed on hard and solid substrates (6) with a one pass process. The method is based on generating fractures along the scribing trajectory which extend deep into the bulk of a workpiece (6), wherein thermal stress is induced by delivering at least two processing (ultra short pulse) pulsed-beams (7), containing at least primary and secondary pulses. Primary pulses are used to generate a heat accumulated zone, which allows for more efficient absorption of the secondary pulses, which generate a sufficient heat gradient to produce mechanical failures, necessary for mechanically separating the workpiece (6) into separate pieces.

Abstract: This invention provides an effective and a method of laser processing for separating semiconductor devices formed on a single substrate (6) or separating high thickness, hard and solid substrates (6), which is rapid. During preparation of the device or substrate (6) for the cleaving/breaking/dicing procedure an area of damage (8, 11) is achieved by obtaining deep and narrow damage area along the intended line of cleaving. The laser processing method comprises a step of modifying a pulsed laser beam (1) by an focusing unit (1), such as that an “spike”-shaped beam convergence zone, more particularly an above workpiece material optical damage threshold fluence (power distribution) in the bulk of the workpiece (6) is produced. During the aforementioned step a modified area (having a “spike”-type shape) is created.

Abstract: This invention provides an effective and a method of laser processing for separating semiconductor devices formed on a single substrate (6) or separating high thickness, hard and solid substrates (6), which is rapid. During preparation of the device or substrate (6) for the cleaving/breaking/dicing procedure an area of damage (8, 11) is achieved by obtaining deep and narrow damage area along the intended line of cleaving. The laser processing method comprises a step of modifying a pulsed laser beam (1) by an focusing unit (1), such as that an “spike”-shaped beam convergence zone, more particularly an above workpiece material optical damage threshold fluence (power distribution) in the bulk of the workpiece (6) is produced. During the aforementioned step a modified area (having a “spike”-type shape) is created.