Abstract: A sputtering device to sputter a liquid target. The sputtering device including a trough to receive a liquid target material and a device to stir or agitate the liquid target material. The device configured to degas the liquid target material or/and to dissipate solid particles or islands on a surface of the target or/and to move such particles or islands from an active surface region to a passive surface region and/or vice-versa, whereby the passive surface region is at least 50% less exposed to sputtering as the active surface region.

Abstract: In a magnetron sputtering reaction space a magnetron magnetic field is generated. A further magnetic field is generated in the reaction space whereby a resultant magnetic field has a directional component parallel to a target plane which is larger than the directional component of the magnetron magnetic field parallel to the target plane in the reaction space.

Abstract: A heater and/or cooler chamber includes a heat storage block or chunk. In the block a multitude of parallel, stacked slit pockets are each dimensioned to accommodate a single plate shaped workpiece. Workpiece handling openings of the slit pockets are freed and respectively covered by a door arrangement. The slit pockets are tailored to snugly surround the plate shaped workpieces therein so as to establish an efficient heat transfer between the heat storage block or chunk and the workpieces to be cooled or heated.

Abstract: In a capacitive coupled etch reactor, in which the smaller electrode is predominantly etched, the surface of the larger electrode is increased by a body e.g. a plate, which is on the same electric potential as the larger electrode and which is immersed in the plasma space. A pattern of openings in which plasma may burn is provided in the body so as to control the distribution of the etching effect on a substrate placed on the smaller electrode.

Abstract: A substrate processing apparatus includes a base with a process-side surface and a substrate support arranged on the process-side surface and designed to carry a substrate at its periphery. The periphery, more specifically the plane defined by the periphery, is spaced apart from the process-side surface. The substrate processing apparatus also includes a radiation sensor adapted to measure electromagnetic radiation arranged on a side of a back-side surface of the base. A radiation channel is arranged between the radiation sensor and the periphery of the substrate support, more specifically between the radiation sensor and the plane defined by the periphery, wherein the radiation channel is at least partially permeable to electromagnetic radiation.

Abstract: In a magnetron sputtering reaction space a magnetron magnetic field is generated. A further magnetic field is generated in the reaction space whereby a resultant magnetic field has a directional component parallel to a target plane which is larger than the directional component of the magnetron magnetic field parallel to the target plane in the reaction space.

Abstract: In a plasma reactor a pumping compartment is separate from a plasma-treating compartment by a structure which includes a central frame. The frame is suspended to the casing of the reactor via spokes. The spokes allow free expansion and contraction of the frame under thermal loading. The slits between the spokes do not allow plasma ignition there and provide for a small flow resistance between the treatment compartment and the pumping compartment. The frame may act as a downholding member for a substrate on the smaller electrode.

Abstract: A plasma etching chamber including within a vacuum recipient: an etching compartment with a central axis and a surrounding wall enclosing the etching compartment; a pumping compartment with a metal surrounding wall having a feed through opening; a metal partition wall traverse to the axis separating the etching compartment from the pumping compartment; a pumping slit in or along the partition wall; a workpiece support; a metal tubular arrangement through the opening, including a first part coupled to the workpiece support and a second part coupled to the metal surrounding wall, the second part being electrically conductively joint to the metal surrounding wall; an Rf feed line through the tubular arrangement connected to the workpiece support; a system ground connector at an end of the second part; distributed metal connectors establishing electric contact from the metal surrounding wall, across the pumping slit via the partition wall to the first part.

Abstract: A method and apparatus for sputter depositing an insulation layer onto a surface of a cavity formed in a substrate and having a high aspect ratio. A target formed from a material to be included in the insulation layer and the substrate are provided in a substantially enclosed chamber defined by a housing. A plasma is ignited within the substantially enclosed chamber and a magnetic field is provided adjacent to a surface of the target to contain the plasma adjacent to the surface of the target. A voltage is rapidly increased to repeatedly establish high-power electric pulses between a cathode and an anode. An average power of the electric pulses is at least 0.1 kW, and can be much greater. An operational parameter of the sputter deposition is controlled to promote sputter depositing of the insulation layer in a transition mode between a metallic mode and a reactive mode.

Abstract: A method of in situ monitoring a thin film deposition process on a substrate, the method including a) defining a desired spectrum, the desired spectrum being a transmission or a reflection spectrum; b1) illuminating the substrate by means of a light source emitting light within the desired spectrum, b2) receiving light reflected from the substrate or transmitted through the substrate, b3) determining a transmission or a reflection spectrum out of the received light; c) defining a spectrum or a combination of spectra in dependency of the spectrum determined in step b3) to be a current spectrum; d) determining a weight spectrum as a function of the current spectrum; e) calculating a real number as a function of the current spectrum, of the desired spectrum and of the weight spectrum; f) exploiting the real number as indication for a deviation of the current spectrum from the desired spectrum.

Abstract: Rf power is supplied to a vacuum processing module in that in the plasma processing module a time invariant impedance transform is performed by an impedance transform network in the plasma processing module and a time variable matching is performed by a matchbox connected to the impedance transform network. The impedance transform network includes an inductive element of a hollow conductor. A cooling medium is flown through the hollow conductor of the impedance transform network as well as through a part of the plasma processing module to be cooled and not being part of the impedance transform network at the plasma processing module.

Abstract: In a capacitively coupled etch reactor, in which the smaller electrode is etched, the larger electrode is electrically supplied by a very high frequency supply signal and by a high frequency supply signal. The smaller electrode, acting as a substrate carrier, is connected to ground potential.

Abstract: An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus has a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. The apparatus also includes an inductance operably connected to the at least one capacitor. A first switch and a second switch are also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. The second switch is operably connected to discharge the magnetron. The second switch is configured to discharge the magnetron according to a second pulse.

Abstract: A vacuum treatment chamber includes a vacuum recipient and therein a screen. Within the screen there is provided a stationary substrate support. Within the side wall of the vacuum recipient, there is provided a substrate handling opening and in the screen, a substrate handling cut-out. A drivingly, moveable screen-shutter frees or covers the substrate handling cut-out in the screen. Thereby, horizontal loading and un-loading (L/UL) of a substrate to the stationary substrate support is possible, although establishing an overall closed screen, once a substrate is treated in the vacuum treatment chamber.

Abstract: An electrical radiation heater arrangement for a vacuum enclosure includes at least two sets of linear heating sources, arranged in a corresponding number of concentric heating zones. The heating sources are arranged directly on the vacuum side of the vacuum enclosure and electrically connected to current rails arranged on the vacuum side with each of the current rails being connected to one electrical feedthrough from vacuum to ambient. Preferably, the heating sources are arranged in a polygon approaching a circle, essentially radially or a combination of both.

Abstract: A vacuum treatment apparatus includes a vacuum treatment recipient with a circular opening between an inside and exterior of the recipient. The recipient houses a turntable, which defines a plane (P) along its table surface, is drivingly rotatable around a central axis perpendicular to plane (P), and exhibits a plurality of circular substrates supports. The opening is arranged such that during a turn of the turntable the area of each of the substrate supports and the opening are fully aligned and completely face each other. The vacuum treatment apparatus also includes a PVD deposition source attached to the opening. The PVD source has a a circular material target and a static magnet arrangement. The magnet arrangement is arranged in a plane (M) in parallel to plane (P) and is not rotationally symmetric around a central axis running centrally through the magnet arrangement and being perpendicular to the plane (M).

Abstract: A method and apparatus for sputter depositing an insulation layer onto a surface of a cavity formed in a substrate and having a high aspect ratio is provided. A target formed at least in part from a material to be included in the insulation layer and the substrate are provided in a substantially enclosed chamber defined by a housing. A plasma is ignited within the substantially enclosed chamber and a magnetic field is provided adjacent to a surface of the target to at least partially contain the plasma adjacent to the surface of the target. A voltage is rapidly increased to repeatedly establish high-power electric pulses between a cathode and an anode. An average power of the electric pulses is at least 0.1 kW, and can optionally be much greater. An operational parameter of the sputter deposition is controlled to promote sputter depositing of the insulation layer in a transition mode between a metallic mode and a reactive mode.

Abstract: A layer deposition apparatus having a substrate carrier, an inorganic material layer deposition station with a PVD layer deposition chamber and an ALD layer deposition chamber as well as a polymer deposition station. A control unit controls intermittent exposure of a substrate on the substrate carrier to the deposition effect of the inorganic material layer deposition station and from the polymer deposition station.

Abstract: An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus comprises a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias.

Abstract: A method of in situ monitoring a thin film deposition process on a substrate, the method including a) defining a desired spectrum, the desired spectrum being a transmission or a reflection spectrum; b1) illuminating the substrate by means of a light source emitting light within the desired spectrum, b2) receiving light reflected from the substrate or transmitted through the substrate, b3) determining a transmission or a reflection spectrum out of the received light; c) defining a spectrum or a combination of spectra in dependency of the spectrum determined in step b3) to be a current spectrum; d) determining a weight spectrum as a function of the current spectrum; e) calculating a real number as a function of the current spectrum, of the desired spectrum and of the weight spectrum; f) exploiting the real number as indication for a deviation of the current spectrum from the desired spectrum.